In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-To-band tunneling (BTBT) has emerged as one of the most promising small slope FETs able to achieve a subthreshold swing (SS) below the room temperature 60 mV/dec limit of conventional MOSFET [1]. Many simulation studies attributed to TFETs the potential to outperform conventional MOSFETs in the ultra-low voltage domain (Vdd < 0.4 V) in both analog [2-3] and digital [4-7] applications. However, only basic digital and analog circuits have been fabricated up to date, such as current mirrors [8] and inverter gates [9]. As for semiconductor materials, III-V hetero-structure TFETs may be able to achieve a sub-Thermal SS in a wide current range and, at the same time, very competitive on currents [1], as demonstrated by a recently fabricated vertical InAs/GaAsSb/GaSb nanowire n-Type TFETs [10].
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs
Strangio S.;
2018-01-01
Abstract
In the past decade the Tunnel Field Effect Transistor (TFET) relying on band-To-band tunneling (BTBT) has emerged as one of the most promising small slope FETs able to achieve a subthreshold swing (SS) below the room temperature 60 mV/dec limit of conventional MOSFET [1]. Many simulation studies attributed to TFETs the potential to outperform conventional MOSFETs in the ultra-low voltage domain (Vdd < 0.4 V) in both analog [2-3] and digital [4-7] applications. However, only basic digital and analog circuits have been fabricated up to date, such as current mirrors [8] and inverter gates [9]. As for semiconductor materials, III-V hetero-structure TFETs may be able to achieve a sub-Thermal SS in a wide current range and, at the same time, very competitive on currents [1], as demonstrated by a recently fabricated vertical InAs/GaAsSb/GaSb nanowire n-Type TFETs [10].I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
