PERUCCHINI, MARTA
 Distribuzione geografica
Continente #
EU - Europa 1.954
NA - Nord America 257
AS - Asia 171
SA - Sud America 23
AF - Africa 8
Totale 2.413
Nazione #
FI - Finlandia 1.868
US - Stati Uniti d'America 253
SG - Singapore 68
CN - Cina 39
HK - Hong Kong 38
IT - Italia 24
DE - Germania 23
BR - Brasile 20
SE - Svezia 16
VN - Vietnam 13
FR - Francia 6
RU - Federazione Russa 6
BG - Bulgaria 4
JP - Giappone 4
SN - Senegal 4
CA - Canada 3
GB - Regno Unito 3
UZ - Uzbekistan 3
AZ - Azerbaigian 2
IN - India 2
PL - Polonia 2
BE - Belgio 1
CI - Costa d'Avorio 1
EG - Egitto 1
MA - Marocco 1
MX - Messico 1
NL - Olanda 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
SY - Repubblica araba siriana 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 2.413
Città #
Helsinki 1.861
Ashburn 51
Hong Kong 38
Singapore 38
Santa Clara 27
Dallas 22
San Jose 22
Fairfield 14
Beijing 10
Munich 10
Shanghai 8
New York 7
Seattle 7
Woodbridge 7
Ho Chi Minh City 6
Boardman 5
Cambridge 5
Frankfurt am Main 5
San Giuliano Terme 5
Boulder 4
Dakar 4
Florence 4
Houston 4
Lawrence 4
Princeton 4
Sofia 4
Tokyo 4
Turku 4
Council Bluffs 3
Düsseldorf 3
Lappeenranta 3
Lauterbourg 3
Los Angeles 3
Medford 3
Nuremberg 3
Pisa 3
Redondo Beach 3
Tashkent 3
The Dalles 3
Ann Arbor 2
Atlanta 2
Belo Horizonte 2
Berlin 2
Buffalo 2
Columbus 2
Hanoi 2
London 2
North Bergen 2
Ogden 2
Wilmington 2
Abidjan 1
Altopascio 1
Asunción 1
Aswān 1
Baku 1
Betim 1
Boa Vista 1
Brantford 1
Brooklyn 1
Brussels 1
Cabo Frio 1
Cao Lanh 1
Capodrise 1
Chennai 1
Chicago 1
Coro 1
Curitiba 1
Da Nang 1
Demnate 1
Des Moines 1
Formosa 1
Forquilhinha 1
Fresno 1
Fuzhou 1
Genoa 1
Goiânia 1
Irving 1
Itapecerica da Serra 1
Juiz de Fora 1
Kaluga 1
Lagarto 1
Lahug 1
Lima 1
Limeira 1
Livorno 1
Louisville 1
Macerata 1
Manassas 1
Marseille 1
Mexico City 1
Muriaé 1
Nanjing 1
Newark 1
Ottawa 1
Palm Coast 1
Paris 1
Quanzhou 1
Ribeirão das Neves 1
Rio de Janeiro 1
Santa Rosa 1
Totale 2.289
Nome #
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 2.021
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 122
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 105
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 97
A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design 80
Totale 2.425
Categoria #
all - tutte 3.957
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.957


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20214 0 0 0 0 0 0 0 0 0 0 0 4
2021/202224 3 0 0 0 3 3 0 0 3 4 0 8
2022/202345 5 2 3 1 0 3 0 11 13 1 5 1
2023/202444 1 4 5 1 4 7 5 0 1 1 11 4
2024/2025210 4 6 14 11 15 23 11 15 22 22 28 39
2025/20262.044 27 20 11 6 21 13 39 9 1.874 17 7 0
Totale 2.425