PERUCCHINI, MARTA
 Distribuzione geografica
Continente #
NA - Nord America 217
AS - Asia 140
EU - Europa 83
SA - Sud America 21
AF - Africa 6
Totale 467
Nazione #
US - Stati Uniti d'America 214
SG - Singapore 59
HK - Hong Kong 37
CN - Cina 35
IT - Italia 22
DE - Germania 19
BR - Brasile 18
SE - Svezia 15
FI - Finlandia 9
RU - Federazione Russa 6
VN - Vietnam 5
BG - Bulgaria 4
SN - Senegal 4
FR - Francia 3
CA - Canada 2
GB - Regno Unito 2
PL - Polonia 2
AZ - Azerbaigian 1
BE - Belgio 1
CI - Costa d'Avorio 1
IN - India 1
JP - Giappone 1
MX - Messico 1
PE - Perù 1
PY - Paraguay 1
UZ - Uzbekistan 1
VE - Venezuela 1
ZA - Sudafrica 1
Totale 467
Città #
Ashburn 46
Hong Kong 37
Singapore 36
Santa Clara 27
Dallas 22
Fairfield 14
Munich 10
Beijing 9
Shanghai 8
New York 7
Seattle 7
Woodbridge 7
Boardman 5
Cambridge 5
San Giuliano Terme 5
Boulder 4
Dakar 4
Florence 4
Frankfurt am Main 4
Houston 4
Lawrence 4
Princeton 4
Sofia 4
Turku 4
Düsseldorf 3
Lappeenranta 3
Los Angeles 3
Medford 3
Pisa 3
Redondo Beach 3
Ann Arbor 2
Buffalo 2
Helsinki 2
Ho Chi Minh City 2
North Bergen 2
Nuremberg 2
Ogden 2
San Jose 2
Wilmington 2
Abidjan 1
Asunción 1
Atlanta 1
Baku 1
Belo Horizonte 1
Betim 1
Boa Vista 1
Brooklyn 1
Brussels 1
Cabo Frio 1
Capodrise 1
Chennai 1
Coro 1
Curitiba 1
Des Moines 1
Formosa 1
Forquilhinha 1
Fresno 1
Fuzhou 1
Genoa 1
Goiânia 1
Juiz de Fora 1
Kaluga 1
Lagarto 1
Lauterbourg 1
Lima 1
Limeira 1
Livorno 1
London 1
Louisville 1
Manassas 1
Marseille 1
Mexico City 1
Muriaé 1
Nanjing 1
Newark 1
Ottawa 1
Palm Coast 1
Quanzhou 1
Ribeirão das Neves 1
Rio de Janeiro 1
Santa Rosa 1
Saratov 1
Shenzhen 1
Taboão da Serra 1
Tashkent 1
Tokyo 1
Toms River 1
Toronto 1
Três Lagoas 1
Vitória 1
Warsaw 1
Westonaria 1
Totale 370
Nome #
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 141
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 102
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 91
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 82
A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design 63
Totale 479
Categoria #
all - tutte 1.905
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.905


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202115 0 0 0 0 0 0 7 0 4 0 0 4
2021/202224 3 0 0 0 3 3 0 0 3 4 0 8
2022/202345 5 2 3 1 0 3 0 11 13 1 5 1
2023/202444 1 4 5 1 4 7 5 0 1 1 11 4
2024/2025210 4 6 14 11 15 23 11 15 22 22 28 39
2025/202698 27 20 11 6 21 13 0 0 0 0 0 0
Totale 479