Carbon nanotubes (CNTs) have been widely proposed as interconnect fabric for nano and very deep submicron (silicon-based) technologies due to their robustness to electromigration. In this paper, issues associated with crosstalk among bus lines implemented by CNTs are investigated in detail. CNT-based interconnects are modeled and the effects of crosstalk on performance and correct operation are evaluated by simulation. Existing models are modified to account for geometries in bus architectures made of parallel single-walled nanotubes and a single multiwalled nanotube. New RLC equivalent circuits are proposed for these bus architectures. A novel bus architecture with low crosstalk features is also proposed. This bus architecture is made of dual-walled nanotubes arranged in parallel. In this architecture, the crosstalk-induced delay and corresponding uncertainty (as well as crosstalk-induced peak voltage) are significantly reduced; a modest area penalty is incurred. Reductions up to 59% for the crosstalk-induced delay and up to 81 % for the crosstalk-induced peak voltage are reported. These results confirm that the proposed bus arrangement noticeably improves performance and provides reliable operation. © 2007 IEEE.
Modeling crosstalk effects in CNT bus architectures
Rossi D.
;
2007-01-01
Abstract
Carbon nanotubes (CNTs) have been widely proposed as interconnect fabric for nano and very deep submicron (silicon-based) technologies due to their robustness to electromigration. In this paper, issues associated with crosstalk among bus lines implemented by CNTs are investigated in detail. CNT-based interconnects are modeled and the effects of crosstalk on performance and correct operation are evaluated by simulation. Existing models are modified to account for geometries in bus architectures made of parallel single-walled nanotubes and a single multiwalled nanotube. New RLC equivalent circuits are proposed for these bus architectures. A novel bus architecture with low crosstalk features is also proposed. This bus architecture is made of dual-walled nanotubes arranged in parallel. In this architecture, the crosstalk-induced delay and corresponding uncertainty (as well as crosstalk-induced peak voltage) are significantly reduced; a modest area penalty is incurred. Reductions up to 59% for the crosstalk-induced delay and up to 81 % for the crosstalk-induced peak voltage are reported. These results confirm that the proposed bus arrangement noticeably improves performance and provides reliable operation. © 2007 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.