Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.

Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers

VIRGILIO, MICHELE;GROSSO, GIUSEPPE;
2008-01-01

Abstract

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.
2008
Bonfanti, M; Grilli, E; Guzzi, M; Virgilio, Michele; Grosso, Giuseppe; Chrastina, D; Isella, G; von Kaenel, H; Neels, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/121642
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