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EnglishDirect-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy and photoluminescence experiments. An sp3d5s∗ tight-binding model has been adopted to interpret the experimental results. Photoluminescence spectra and their comparison with theoretical calculations prove the existence of type-I band alignment in compressively strained Ge quantum wells grown on relaxed Ge-rich SiGe buffers. The high quality of the transmission spectra opens up other perspectives for application of these structures in near-infrared optical modulators.
| Autori interni: | ||
| Autori: | Bonfanti M; Grilli E; Guzzi M; Virgilio M; Grosso G; Chrastina D; Isella G; von Kaenel H; Neels A | |
| Titolo: | Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers | |
| Anno del prodotto: | 2008 | |
| Digital Object Identifier (DOI): | 10.1103/PhysRevB.78.041407 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/121642
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