Two-dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and existing physical phenomena. Here, we present a proofof-concept valleytronic device based on CrBr3-encapsulated WSe2 showing an unprecedented valley splitting of -100 meV under the compressive strain of the WSe2, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80% than is maintained in a range of -0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated.
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure
Marian D.;Dubey P.;Fiori G.
2024-01-01
Abstract
Two-dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and existing physical phenomena. Here, we present a proofof-concept valleytronic device based on CrBr3-encapsulated WSe2 showing an unprecedented valley splitting of -100 meV under the compressive strain of the WSe2, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80% than is maintained in a range of -0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
