MARIAN, DAMIANO Statistiche
MARIAN, DAMIANO
DIPARTIMENTO DI FISICA
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices
2023-01-01 Dubey, Prabhat Kumar; Marian, Damiano; Fiori, Gianluca
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices
2023-01-01 Li, Xuefei; Shi, Xinhang; Marian, Damiano; Soriano, David; Cusati, Teresa; Iannaccone, Giuseppe; Fiori, Gianluca; Guo, Qi; Zhao, Wenjie; Wu, Yanqing
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective
2022-01-01 Perucchini, M.; Marian, D.; Marin, E. G.; Cusati, T.; Iannaccone, G.; Fiori, G.
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN
2022-01-01 Piacentini, Agata; Marian, D; Schneider, Ds; Marin, Eg; Wang, Zy; Otto, M; Canto, B; Radenovic, A; Kis, A; Fiori, Gianluca; Lemme, Mc; Neumaier, D
Electric-field controlled spin transport in bilayer CrI3
2021-01-01 Marian, Damiano; SORIANO HERNANDEZ, David; Marin, Enrique G.; Iannaccone, Giuseppe; Fiori, Gianluca
MoS2/graphene Lateral Heterostructure Field Effect Transistors
2021-01-01 S Schneider, Daniel; Reato, Eros; Lucchesi, Leonardo; Wang, Zhenyu; Piacetini, Agata; Bolten, Jens; Marian, Damiano; G Marin, Enrique; Radenovic, Aleksandra; Wang, Zhenxing; Fiori, Gianluca; Kis, Andras; Iannaccone, Giuseppe; Neumaier, Daniel; C Lemme, Max
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces
2021-01-01 Calogero, Gaetano; Marian, Damiano; G Marin, Enrique; Fiori, Gianluca; Iannaccone, Giuseppe
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation
2021-01-01 Cannavo', Emmanuele; Marian, Damiano; González Marín, Enrique; Iannaccone, Giuseppe; Fiori, Gianluca
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source
2020-01-01 Marin, E. G.; Marian, D.; Perucchini, M.; Fiori, G.; Iannaccone, G.
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons
2020-01-01 Marian, D.; Marin, E. G.; Iannaccone, G.; Fiori, G.
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2
2019-01-01 Mine, H; Kobayashi, A; Nakamura, T; Inoue, T; Pakdel, S; Marian, D; Gonzalez-Marin, E; Maruyama, S; Katsumoto, S; Fortunelli, A; Palacios, Jj; Haruyama, J
First-principles simulations of FETs based on two-dimensional InSe
2018-01-01 Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca
Modeling of Electron Devices Based on 2-D Materials
2018-01-01 Marin, E. G.; Perucchini, M.; Marian, D.; Iannaccone, G.; Fiori, G.
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate
2018-01-01 Perucchini, Marta; Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene
2018-01-01 Marin, E. G.; Marian, D.; Iannaccone, G.; Fiori, G.
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials
2017-01-01 Marin, E. G.; Marian, D.; Iannaccone, G.; Fiori, G.
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices
2017-01-01 Colomes, E; Zhan, Z; Marian, D; Oriols, X
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2
2017-01-01 Marian, Damiano; Dib, Elias; Cusati, Teresa; Marin, Enrique G.; Fortunelli, Alessandro; Iannaccone, Giuseppe; Fiori, Gianluca
How does quantum uncertainty emerge from deterministic bohmian mechanics?
2016-01-01 Solé, A; Oriols, X.; Marian, Damiano; Zanghi', Pierantonio
Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms
2016-01-01 Marian, D; Colomes, E
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices | 1-gen-2023 | Dubey, Prabhat Kumar; Marian, Damiano; Fiori, Gianluca | |
| Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices | 1-gen-2023 | Li, Xuefei; Shi, Xinhang; Marian, Damiano; Soriano, David; Cusati, Teresa; Iannaccone, Giuseppe; Fiori, Gianluca; Guo, Qi; Zhao, Wenjie; Wu, Yanqing | |
| Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective | 1-gen-2022 | Perucchini, M.; Marian, D.; Marin, E. G.; Cusati, T.; Iannaccone, G.; Fiori, G. | |
| Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN | 1-gen-2022 | Piacentini, Agata; Marian, D; Schneider, Ds; Marin, Eg; Wang, Zy; Otto, M; Canto, B; Radenovic, A; Kis, A; Fiori, Gianluca; Lemme, Mc; Neumaier, D | |
| Electric-field controlled spin transport in bilayer CrI3 | 1-gen-2021 | Marian, Damiano; SORIANO HERNANDEZ, David; Marin, Enrique G.; Iannaccone, Giuseppe; Fiori, Gianluca | |
| MoS2/graphene Lateral Heterostructure Field Effect Transistors | 1-gen-2021 | S Schneider, Daniel; Reato, Eros; Lucchesi, Leonardo; Wang, Zhenyu; Piacetini, Agata; Bolten, Jens; Marian, Damiano; G Marin, Enrique; Radenovic, Aleksandra; Wang, Zhenxing; Fiori, Gianluca; Kis, Andras; Iannaccone, Giuseppe; Neumaier, Daniel; C Lemme, Max | |
| Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces | 1-gen-2021 | Calogero, Gaetano; Marian, Damiano; G Marin, Enrique; Fiori, Gianluca; Iannaccone, Giuseppe | |
| Transport properties in partially overlapping van der Waals junctions through a multiscale investigation | 1-gen-2021 | Cannavo', Emmanuele; Marian, Damiano; González Marín, Enrique; Iannaccone, Giuseppe; Fiori, Gianluca | |
| Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source | 1-gen-2020 | Marin, E. G.; Marian, D.; Perucchini, M.; Fiori, G.; Iannaccone, G. | |
| Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons | 1-gen-2020 | Marian, D.; Marin, E. G.; Iannaccone, G.; Fiori, G. | |
| Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 | 1-gen-2019 | Mine, H; Kobayashi, A; Nakamura, T; Inoue, T; Pakdel, S; Marian, D; Gonzalez-Marin, E; Maruyama, S; Katsumoto, S; Fortunelli, A; Palacios, Jj; Haruyama, J | |
| First-principles simulations of FETs based on two-dimensional InSe | 1-gen-2018 | Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca | |
| Modeling of Electron Devices Based on 2-D Materials | 1-gen-2018 | Marin, E. G.; Perucchini, M.; Marian, D.; Iannaccone, G.; Fiori, G. | |
| Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate | 1-gen-2018 | Perucchini, Marta; Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca | |
| Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene | 1-gen-2018 | Marin, E. G.; Marian, D.; Iannaccone, G.; Fiori, G. | |
| First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials | 1-gen-2017 | Marin, E. G.; Marian, D.; Iannaccone, G.; Fiori, G. | |
| Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices | 1-gen-2017 | Colomes, E; Zhan, Z; Marian, D; Oriols, X | |
| Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 | 1-gen-2017 | Marian, Damiano; Dib, Elias; Cusati, Teresa; Marin, Enrique G.; Fortunelli, Alessandro; Iannaccone, Giuseppe; Fiori, Gianluca | |
| How does quantum uncertainty emerge from deterministic bohmian mechanics? | 1-gen-2016 | Solé, A; Oriols, X.; Marian, Damiano; Zanghi', Pierantonio | |
| Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms | 1-gen-2016 | Marian, D; Colomes, E |