Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model-solid theory to show that Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into heterostructures that demonstrate a broken-gap alignment. Furthermore, the eight-band k center dot p method is used to disclose a quantum spin Hall phase in heterojunctions that accommodates the existence of gate -controlled chiral edge states. This proposal introduces a practical silicon-based architecture that spontaneously sustains topological properties, while being compatible with the high-volume manufacture of semiconductor technologies.

Quantum spin Hall phase in GeSn heterostructures on silicon

Virgilio, M.
Penultimo
;
2023-01-01

Abstract

Quantum phases of solid-state electron systems can sustain exotic phenomena and a very rich spin physics. We utilize model-solid theory to show that Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into heterostructures that demonstrate a broken-gap alignment. Furthermore, the eight-band k center dot p method is used to disclose a quantum spin Hall phase in heterojunctions that accommodates the existence of gate -controlled chiral edge states. This proposal introduces a practical silicon-based architecture that spontaneously sustains topological properties, while being compatible with the high-volume manufacture of semiconductor technologies.
2023
Ferrari, B. M.; Marcantonio, F.; Murphy-Armando, F.; Virgilio, M.; Pezzoli, F.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/1242449
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