Optical and structural properties of p-doped Ge/SiGe multiple quantum wells for mid-infrared photonics

We present a detailed study of hole-doped Ge/SiGe multiple quantum wells as a promising material platform formid-infrared photonics. The heterostructures were grown on SiGe virtual substrates using low-energy plasmaenhanced chemical vapor deposition. Structural and compositional analyses via atom probe tomography and x-ray diffraction were employed to assess the crystal quality and retrieve the compositional profiles. The optical response of the samples, in the 4–12-μm wavelength range, was investigated as a function of the temperature and complementary Hall-effect measurements were performed providing insights into the temperature evolution of the electrical transport properties. In addition, a well-established tight-binding model was used to reproduce and interpret the experimental results starting from the calculated valence band structure.