In this work we present the results of a systematic study about SI GaAs detectors as a function of substrate and contact type, geometry and thickness. This study has been stimulated from the interest in using GaAs as a detector for medical imaging applications. GaAs detectors have been produced using crystals grown with different techniques and changing both the thickness (in the range 200 mum-1 mm) and the contacts type and geometry. We have measured the current-voltage characteristics and, using radioactive sources (Cd-109, 20 keV photons, Am-241, 60 keV photons, Tc-99m, 140 keV photons), we have studied the performance of our detectors in terms of charge collection efficiency and energy resolution as a function of the bias voltage. Besides we have also studied the electrical and spectroscopic properties of GaAs detectors with different types and concentrations of the dopants in the substrate. So we have found the optimal doping type and concentration to have the best spectroscopic performances and the higher breakdown voltage. Simulation programs made with Montecarlo methods have been developed to describe the electric field distribution and the transport of charge carriers toward the electrodes in GaAs detectors. In these simulations we have considered the presence of deep energy levels in the bandgap, the thickness, the bias voltage and the charge deposition in the crystal after photon interaction. RI Cola, Adriano/G-2379-2010

Study of GaAs detectors characteristics for medical imaging

BISOGNI, MARIA GIUSEPPINA;DELOGU, PASQUALE;FANTACCI, MARIA EVELINA;ROSSO, VALERIA;STEFANINI, ARNALDO;
2002

Abstract

In this work we present the results of a systematic study about SI GaAs detectors as a function of substrate and contact type, geometry and thickness. This study has been stimulated from the interest in using GaAs as a detector for medical imaging applications. GaAs detectors have been produced using crystals grown with different techniques and changing both the thickness (in the range 200 mum-1 mm) and the contacts type and geometry. We have measured the current-voltage characteristics and, using radioactive sources (Cd-109, 20 keV photons, Am-241, 60 keV photons, Tc-99m, 140 keV photons), we have studied the performance of our detectors in terms of charge collection efficiency and energy resolution as a function of the bias voltage. Besides we have also studied the electrical and spectroscopic properties of GaAs detectors with different types and concentrations of the dopants in the substrate. So we have found the optimal doping type and concentration to have the best spectroscopic performances and the higher breakdown voltage. Simulation programs made with Montecarlo methods have been developed to describe the electric field distribution and the transport of charge carriers toward the electrodes in GaAs detectors. In these simulations we have considered the presence of deep energy levels in the bandgap, the thickness, the bias voltage and the charge deposition in the crystal after photon interaction. RI Cola, Adriano/G-2379-2010
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/191440
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