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EnglishPolarization resolved absorption spectra of a strain-compensated Ge multiple quantum well (MQW) structure with Ge-rich SiGe barriers have been calculated with an sp3d5s∗ tight-binding model and measured for light propagating perpendicular to the growth direction. The MQW was grown by low-energy plasma-enhanced chemical vapor deposition and consists of 50 Ge quantum wells deposited onto a thick graded Si1−xGex buffer layer. The MQW was structurally characterized by high-resolution x-ray diffraction. The measured absorption spectra show clear quantum confined excitonic transitions related to the Ge Γ point band gap, and strong dependence on the incident light polarization, as expected from selection rules for type I direct gap quantum confined systems. A good agreement between theoretically predicted spectra and experimental data is found, demonstrating light and heavy hole polarization-dependent selection rules in Ge MQWs.
| Autori interni: | ||
| Autori: | Virgilio M; Bonfanti M; Chrastina D; Neels A; Isella G; Grilli E; Guzzi M; Grosso G; Sigg H; von Kanel H | |
| Titolo: | Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment | |
| Anno del prodotto: | 2009 | |
| Digital Object Identifier (DOI): | 10.1103/PhysRevB.79.075323 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/196414
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