In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.

Conduction band intersubband transitions in Ge/SiGe quantum wells

VIRGILIO, MICHELE;GROSSO, GIUSEPPE;
2009

Abstract

In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.
De Seta, M; Capellini, G; Busby, Y; Evangelisti, F; Ortolani, M; Virgilio, Michele; Grosso, Giuseppe; Pizzi, G; Nucara, A; Lupi, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/196420
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