EnglishIn this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.
| Autori: | |
| Autori: | De Seta M; Capellini G; Busby Y; Evangelisti F; Ortolani M; Virgilio M; Grosso G; Pizzi G; Nucara A; Lupi S |
| Titolo: | Conduction band intersubband transitions in Ge/SiGe quantum wells |
| Anno del prodotto: | 2009 |
| Digital Object Identifier (DOI): | 10.1063/1.3198204 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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