In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.
|Autori:||De Seta M; Capellini G; Busby Y; Evangelisti F; Ortolani M; Virgilio M; Grosso G; Pizzi G; Nucara A; Lupi S|
|Titolo:||Conduction band intersubband transitions in Ge/SiGe quantum wells|
|Anno del prodotto:||2009|
|Digital Object Identifier (DOI):||10.1063/1.3198204|
|Appare nelle tipologie:||1.1 Articolo in rivista|