A method is proposed to calculate the capacitance of conducting MIS diodes based on a proper solution of the Poisson equation, which holds for any type of trap distribution in the oxide layer. This approach allows us to calculate the electric field and the voltage drop along the whole MIS structure, thus arriving at a general expression of its capacitance. By using these results, we obtain, as a special case, the usual expression for MIS diode capacitance in the presence of interfacial states. The theoretical 1/C2 vs reverse voltage characteristics of junctions with spatially distributed oxide traps present different slopes and voltage axis intercepts in comparison with those calculated by localizing interfacial states at the insulator/semiconductor interface only.
|Autori:||NANNINI A; BAGNOLI PE|
|Titolo:||ANALYSIS OF THE INFLUENCE OF SPATIALLY LOCALIZED OXIDE TRAPS ON THE CAPACITANCE OF MIS TUNNEL-DIODES|
|Anno del prodotto:||1990|
|Digital Object Identifier (DOI):||10.1002/ett.4460010506|
|Appare nelle tipologie:||1.1 Articolo in rivista|