In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k·p model.
|Autori:||De Seta M; Capellini G; Ortolani M; Virgilio M; Grosso G; Nicotra G; Zaumseil P|
|Titolo:||Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift|
|Anno del prodotto:||2012|
|Digital Object Identifier (DOI):||10.1088/0957-4484/23/46/465708|
|Appare nelle tipologie:||1.1 Articolo in rivista|