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EnglishIn this paper, we investigate the electrical behavior of transistors based on a vertical graphene-hexagonal boron nitride (hBN) heterostructure, using atomistic multiphysics simulations based on density-functional theory and non-equilibrium Green’s function formalism. We show that the hBN current-blocking layer is effective and allows modulation of the current by five orders of magnitude, confirming experimental results. We also highlight—through accurate numerical calculations and simpli- fied analytical modeling—some intrinsic limitations of vertical heterostructure transistors. We show that the overlap between gate contacts and source/drain leads screens the electric field induced by the gates and is responsible for the excessive degradation of the sub-threshold swing, the ION/IOFF ratio, and the cut-off frequency.
| Autori interni: | |
| Autori: | G. Fiori;S. Bruzzone;G. Iannaccone |
| Titolo: | Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors |
| Anno del prodotto: | 2013 |
| Digital Object Identifier (DOI): | 10.1109/TED.2012.2226464 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/256953
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