We investigate variability of a 32 nm flash memory cell and of 32 nm MOSFETs with a methodology based on sensitivity analysis performed with a limited number of TCAD simulations. We show that – as far as the standard deviation of the threshold voltage is concerned – our method provides results in very good agreement with those from three-dimensional atomistic statistical simulations, with a computational burden that is orders of magnitude smaller. We show that the proposed approach is a powerful tool to understand the role of the main variability sources and to explore the device design parameter space.
Autori interni: | ||
Autori: | V., Bonfiglio; Iannaccone, Giuseppe | |
Titolo: | Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs | |
Anno del prodotto: | 2013 | |
Digital Object Identifier (DOI): | 10.1016/j.sse.2013.02.029 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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Bonfiglio_SSE_special_issue_revised.pdf | Documento in Pre-print | Tutti i diritti riservati (All rights reserved) | Open AccessVisualizza/Apri |
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