We investigate variability of a 32 nm flash memory cell and of 32 nm MOSFETs with a methodology based on sensitivity analysis performed with a limited number of TCAD simulations. We show that – as far as the standard deviation of the threshold voltage is concerned – our method provides results in very good agreement with those from three-dimensional atomistic statistical simulations, with a computational burden that is orders of magnitude smaller. We show that the proposed approach is a powerful tool to understand the role of the main variability sources and to explore the device design parameter space.
|Autori:||V., Bonfiglio; Iannaccone, Giuseppe|
|Titolo:||Sensitivity-based investigation of threshold voltage variability in 32-nm flash memory cells and MOSFETs|
|Anno del prodotto:||2013|
|Digital Object Identifier (DOI):||10.1016/j.sse.2013.02.029|
|Appare nelle tipologie:||1.1 Articolo in rivista|