Unipolar semiconductor injection lasers emitting at THz frequencies (from 4.3 THz down to 2.8 THz) are discussed. The devices are based on interminiband transitions in chirped GaAs/AlGaAs superlattices that are arranged in a quantum-cascade scheme. The core, featuring about 100 repetitions of this type of superlattice, is embedded into a novel kind of waveguide loosely based on the surface plasmon concept, which allows low absorption losses and high confinement factors. These devices operate in pulsed mode up to a maximum temperature of 75 K (50 K in continuous wave) with several mW of output power and threshold current densities as low as 100 A/cm(2). A promising structure based on an interdigitated cascade is presented that allows operation above 90 K with high emitted powers. (C) 2003 Elsevier B.V. All rights reserved.

Terahertz quantum cascade lasers

TREDICUCCI, ALESSANDRO
Primo
;
2004

Abstract

Unipolar semiconductor injection lasers emitting at THz frequencies (from 4.3 THz down to 2.8 THz) are discussed. The devices are based on interminiband transitions in chirped GaAs/AlGaAs superlattices that are arranged in a quantum-cascade scheme. The core, featuring about 100 repetitions of this type of superlattice, is embedded into a novel kind of waveguide loosely based on the surface plasmon concept, which allows low absorption losses and high confinement factors. These devices operate in pulsed mode up to a maximum temperature of 75 K (50 K in continuous wave) with several mW of output power and threshold current densities as low as 100 A/cm(2). A promising structure based on an interdigitated cascade is presented that allows operation above 90 K with high emitted powers. (C) 2003 Elsevier B.V. All rights reserved.
Tredicucci, Alessandro; Kohler, R; Beltram, F; Beere, He; Linfield, Eh; Davies, Ag; Ritchie, Da
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/495146
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