Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode.

Terahertz detection by heterostructured InAs/InSb nanowire based field effect transistors

TREDICUCCI, ALESSANDRO;
2012

Abstract

Heterostructured InAs/InSb nanowire (Nw) based field effect transistors (FET) have been fabricated and tested as Terahetz radiation detectors. While responsivity and noise equivalent power compare with the ones of InAs nanowire detectors, the presence of small-gap InSb semiconductor gives rise to interesting physical effects such an increase of the detected signal with charge injection through the wire, at odds with standard FET-detectors. Additionally, the photodetected signal voltage changes its sign after a threshold gate bias, which we explain considering surface-related transport and field asymmetries imposed by the use of a lateral gate electrode.
Pitanti, A.; Coquillat, D.; Ercolani, D.; Sorba, L.; Teppe, F.; Knap, W.; De Simoni, G.; Beltram, F.; Tredicucci, Alessandro; Vitiello, M. S.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/495182
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