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EnglishNanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III) leads to a strong rectification effect when the current-voltage (I-V) characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.
| Autori interni: | ||
| Autori: | Pitanti, A.; Ercolani, D.; Sorba, L.; Roddaro, Stefano; Beltram, F.; Nasi, L.; Salviati, G.; Tredicucci, Alessandro | |
| Titolo: | InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes | |
| Anno del prodotto: | 2011 | |
| Digital Object Identifier (DOI): | 10.1103/PhysRevX.1.011006 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
http://hdl.handle.net/11568/495197
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