Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Chen, C. Y.; Shik, A.; Pitanti, A.; Tredicucci, Alessandro; Ercolani, D.; Sorba, L.; Beltram, F.; Ruda, H. E.

doi:10.1063/1.4745603

InSb-InAs nanowire heterostructure diodes investigated by electron beam induced current (EBIC) demonstrate an unusual spatial profile where the sign of the EBIC signal changes in the vicinity of the heterointerface. A qualitative explanation confirmed by theoretical calculations is based on the specific band diagram of the structure representing a type-III heterojunction with an accumulation layer in InAs. The sign of the EBIC signal depends on the specific parameters of this layer. In the course of measurements, the diffusion length of holes in InAs and its temperature dependence are also determined. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745603]

Autori interni:	Chen C. Y. Shik A. Pitanti A. TREDICUCCI, ALESSANDRO Ercolani D. Sorba L. Beltram F. Ruda H. E. mostra contributor esterni nascondi contributor esterni
Autori:	Chen C. Y.; Shik A.; Pitanti A.; Tredicucci A.; Ercolani D.; Sorba L.; Beltram F.; Ruda H. E.
Titolo:	Electron beam induced current in InSb-InAs nanowire type-III heterostructures
Anno del prodotto:	2012
Digital Object Identifier (DOI):	10.1063/1.4745603
Appare nelle tipologie:	1.1 Articolo in rivista

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http://hdl.handle.net/11568/495200

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