The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions were investigated theoretically and experimentally. Analysis of the current-voltage characteristics showed that the current through the heterojunction is caused mostly by generation-recombination processes in the InSb and at the heterointerface. Due to the partially overlapping valence band of InSb and the conduction band of InAs, the second process is fast and activationless. Theoretical analysis showed that, depending on the heterojunction parameters, the flux of non-equilibrium minority carriers may have a different direction, explaining the experimentally observed non-monotonic coordinate dependence of the electron beam induced current.
|Autori interni:||TREDICUCCI, ALESSANDRO|
|Autori:||Shik A.; Chen C. Y.; Pitanti A.; Tredicucci A.; Ercolani D.; Sorba L.; Beltram F.; Ruda H. E.|
|Titolo:||Electrical properties and band diagram of InSb-InAs nanowire type-III heterojunctions|
|Anno del prodotto:||2013|
|Digital Object Identifier (DOI):||10.1063/1.4795123|
|Appare nelle tipologie:||1.1 Articolo in rivista|