We report the successful demonstration of an optically activated GaAs switches for DC applications. The results obtained suggest that such devices can be used to control a static voltage drop of several hundreds of volts across gas microstrip detectors for high-energy experiments. The response of passivated/non-passivated devices and also for proton irradiated devices has been evaluated as a function of the incident light intensity and of the applied voltage. (C) 1998 Elsevier Science B.V. All rights reserved. RI Cola, Adriano/G-2379-2010

Optically activated planar GaAs switches for DC applications

BISOGNI, MARIA GIUSEPPINA;FANTACCI, MARIA EVELINA;
1998-01-01

Abstract

We report the successful demonstration of an optically activated GaAs switches for DC applications. The results obtained suggest that such devices can be used to control a static voltage drop of several hundreds of volts across gas microstrip detectors for high-energy experiments. The response of passivated/non-passivated devices and also for proton irradiated devices has been evaluated as a function of the incident light intensity and of the applied voltage. (C) 1998 Elsevier Science B.V. All rights reserved. RI Cola, Adriano/G-2379-2010
1998
Cola, A; Quaranta, F; Vasanelli, L; Bertolucci, E; Conti, M; Russo, P; Bisogni, MARIA GIUSEPPINA; Bottigli, U; Fantacci, MARIA EVELINA; Stefanini, A; Fucci, R; Melone, G; Rossi, R; Stefanini, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/56872
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