http://www.gianlucafiori.org/articles/NL_Schottky.pdf Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13–0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
|Autori:||Katagiri, Y.; Nakamura, T.; Ishii, A.; Ohata, C.; Hasegawa, M.; Katsumoto, S.; Cusati, T.; Fortunelli, A.; Iannaccone, G.; Fiori, G.; Roche, S.; Haruyama, J|
|Titolo:||Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam|
|Anno del prodotto:||2016|
|Digital Object Identifier (DOI):||10.1021/acs.nanolett.6b01186|
|Appare nelle tipologie:||1.1 Articolo in rivista|