In this talk, we will present a performance assessment study of 2D materials for electronic applications, ranging from digital, analog and opto-electronics applications. Such an issue will be addressed through a multi-scale simulation approach, needed in order to get the physics playing at such dimensions. To this purpose we will exploit ab-initio calculation in order to get the main parameters to be exploited at a higher level of abstraction at the device level, by means of Non-Equilibrium Green's function formalism. We will show that, due to their ultimate thinness, 2D materials-based FETs manage to suppress short-channel effects, but intra-band tunneling can be detrimental for device performance in the sub-5 nm range.
On the perspective of 2D materials for electronic applications
FIORI, GIANLUCA;IANNACCONE, GIUSEPPE
2016-01-01
Abstract
In this talk, we will present a performance assessment study of 2D materials for electronic applications, ranging from digital, analog and opto-electronics applications. Such an issue will be addressed through a multi-scale simulation approach, needed in order to get the physics playing at such dimensions. To this purpose we will exploit ab-initio calculation in order to get the main parameters to be exploited at a higher level of abstraction at the device level, by means of Non-Equilibrium Green's function formalism. We will show that, due to their ultimate thinness, 2D materials-based FETs manage to suppress short-channel effects, but intra-band tunneling can be detrimental for device performance in the sub-5 nm range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
