Electronics enabled by two-dimensional materials

Two-dimensional materials have shown so far exceptional properties, which could pave the way towards their exploitation in a wide range of electronic applications. Their ultimate thinness as well as their excellent electrical properties could represent the enabling ingredients in order to obtain end-of-the-roadmap transistors. Actually, both Industry and Academy are fighting against the main issue of breaking the sub-5nm channel length limit in next-generation field effect transistors, since short channel effects (SCE) as well as quantum tunnelling phenomena are greatly affecting device performance. Here we will show that ultimately thin devices based on two-dimensional materials will manage to accomplish this goal, being able to both reduce SCE and intra-band tunnelling, if materials with sufficiently large effective mass along the longitudinal direction are properly chosen. In the talk, we will also cover other important issues, like flexible electronics, and optoelectronic applications, like the exploitation of graphene as a transparent conductive electrode in flexible organic solar cells.