A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 um BiCMOS ALCATEL technology. to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor. implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT. (C) 2003 Elsevier Science Ltd. All rights reserved.
MAGFET based current sensing for power integrated circuit
RONCELLA, ROBERTO
2003-01-01
Abstract
A new on-chip non-invasive integrated current sensing, compatible with standard CMOS technology, has been developed, using a 1.2 um BiCMOS ALCATEL technology. to sense the current in the drain side of a power MOSFET. The circuit is based on a split-drain magnetic sensor. implemented on the same chip of an integrated gate driver for a power MOSFET. A CMOS biasing circuit with a differential current output is also developed. The simulation results of the current sensing show a conversion gain of 1.25 mV/mT. (C) 2003 Elsevier Science Ltd. All rights reserved.File in questo prodotto:
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