We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a “planar barristor”, a gate Schottky diode that is the full 2D counterpart of the graphene barristor device proposed in [2]. We evaluate their performance with ab-initio simulations using as a benchmark the CMOS technology roadmap.
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures
MARIAN, DAMIANO;IANNACCONE, GIUSEPPE;FIORI, GIANLUCA
2016-01-01
Abstract
We propose two types of transistors based on lateral heterostructures of metallic and semiconducting phases of monolayer MoS 2 , whose top-down patterning has been recently demonstrated via electron beam irradiation [1]. The proposed transistors a MoS2 lateral heterostructure FET, and a “planar barristor”, a gate Schottky diode that is the full 2D counterpart of the graphene barristor device proposed in [2]. We evaluate their performance with ab-initio simulations using as a benchmark the CMOS technology roadmap.File in questo prodotto:
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