We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p-doped ferromagnetic-semiconductor-nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an envelope-function approach for the hole bands in the various regions of the transistor, we derive the complete theory of coherent transport through the device, which includes both heavy- and light-hole subbands, proper modeling of the mode matching at interfaces, integration over injection angles, Rashba spin precession, interference effects due to multiple reflections, and gate-voltage dependences. Numerical results for the device current as a function of externally tunable parameters are in excellent agreement with approximate analytical formulas.
|Autori:||PALA G; GOVERNALE M; KUNIG J; ZULICKE U; IANNACCONE G|
|Titolo:||Two-dimensional hole precession in an all-semiconductor spin field effect transistor|
|Anno del prodotto:||2004|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.69.045304|
|Appare nelle tipologie:||1.1 Articolo in rivista|