We present a thermodynamically consistent theory for solvent-vapor induced spherulitic crystallization in binary thin-film blends, including those which consist of polymeric or organic small-molecule semiconductors. Under the proposed theory, spherulitic growth is interface driven, with no diffusion of any species. The thermodynamic driving force at the interface between the spherulite and amorphous phase is identified, and a kinetic relation that delivers a constant growth rate is proposed. © 2013 AIP Publishing LLC.
Spherulitic crystallization in binary thin films under solvent-vapor annealing. I. A sharp-interface theory
Paroni, Roberto
2013-01-01
Abstract
We present a thermodynamically consistent theory for solvent-vapor induced spherulitic crystallization in binary thin-film blends, including those which consist of polymeric or organic small-molecule semiconductors. Under the proposed theory, spherulitic growth is interface driven, with no diffusion of any species. The thermodynamic driving force at the interface between the spherulite and amorphous phase is identified, and a kinetic relation that delivers a constant growth rate is proposed. © 2013 AIP Publishing LLC.File in questo prodotto:
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