Devices based on 2D materials for on-chip amplification of ionization charges

Pixels detectors are widely used ionizing radiation detection devices in high-energy physics (HEP)experiments. Segmented detectors have been employed for many years due to the need to simul-taneously track the thousands of particles emerging from modern colliders. For more preciseand accurate measurements one would like to have faster, less noisy and smaller pixels, but cur-rent technology imposes several limits on these characteristics. The aim of this work is to ex-plore the possible applications of bi-dimensional materials such as Graphene or transition metaldichalcogenide monolayers (TMDs) to address these problems. In particular, one wants to de-termine whether nano-electronic devices based on 2D materials could be used to obtain built-inpre-amplification of the pixel signal, thus achieving better detection performance. The workingprinciple is the field-effect modulation of the channel conductivity in a 2D material-based tran-sistor, due to the presence of ionization charges in a silicon absorber. Several architectures aretested, and a final device of choice is presented, with a sketch of a realistic readout system andits noise figure. The conductance modulation due to incoming particles is found to be more than30%, resulting in a strong current signal, which leads to very favourable signal-to-noise ratios (SNR).