A novel one-dimensional geometry for metal–insulator–graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 which acts as barrier material. The diodes demonstrate ultrahigh current density since the transport in the graphene and through the barrier is in-plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high-frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
Flexible One-Dimensional Metal–Insulator–Graphene Diode
Otto, Martin;Marín, Enrique González;Iannaccone, Giuseppe;Fiori, Gianluca;
2019-01-01
Abstract
A novel one-dimensional geometry for metal–insulator–graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 which acts as barrier material. The diodes demonstrate ultrahigh current density since the transport in the graphene and through the barrier is in-plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high-frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
