IANNACCONE, GIUSEPPE Statistiche
IANNACCONE, GIUSEPPE
DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE
"Atomistic", quantum and ballistic effects in nanoscale MOSFETs
2003-01-01 Fiori, Gianluca; Iannaccone, Giuseppe
"Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET
2003-01-01 Fiori, Gianluca; Iannaccone, Giuseppe
1/f Noise Characterization of Bilayer MoS2 Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics
2021-01-01 Pimpolari, L.; Calabrese, G.; Conti, S.; Worsley, R.; Majee, S.; Polyushkin, D. K.; Paur, M.; Casiraghi, C.; Mueller, T.; Iannaccone, G.; Macucci, M.; Fiori, G.
2D Electronics: what can we really expect?
2015-01-01 Fiori, Gianluca; Iannaccone, Giuseppe
2D materials-based electronics: where do we go from here?
2015-01-01 Fiori, Gianluca; Iannaccone, Giuseppe
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
2006-01-01 Lisieri, M; Fiori, Gianluca; Iannaccone, Giuseppe
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion
2022-01-01 Zambrano, B.; Garzon, E.; Strangio, S.; Iannaccone, G.; Lanuzza, M.
A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations
2007-01-01 G., DE VITA; Iannaccone, Giuseppe
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference
2011-01-01 L., Magnelli; F., Crupi; P., Corsonello; C., Pace; Iannaccone, Giuseppe
A 220-mV input, 8.6 step-up voltage conversion ratio, 10.45-μW output power, fully integrated switched-capacitor converter for energy harvesting
2017-01-01 Intaschi, Luca; Bruschi, Paolo; Iannaccone, Giuseppe; Dalena, Francesco
A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process,
2006-01-01 G., DE VITA; Iannaccone, Giuseppe; P., Andreani
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET
2011-01-01 G., Giusi; Iannaccone, Giuseppe; F., Crupi; U., Ravaioli
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009-01-01 P., Palestri; C., Alexander; A., Asenov; V., AUBRY FORTUNA; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; D., Esseni; C., FENOUILLET BERANGER; C., Fiegna; Fiori, Gianluca; A., Ghetti; Iannaccone, Giuseppe; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., SAINT MARTIN; E., Sangiorgi; A., Schenk; L., Selmi; L., Silvestri; P., Toniutti; J., Walczak
A critical review of reduced one-dimensional beam models of piezoelectric composite beams
2019-01-01 Luschi, Luca; Iannaccone, Giuseppe; Pieri, Francesco
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering ,
2011-01-01 G., Giusi; Iannaccone, Giuseppe; F., Crupi
A model for MOS gate stack quality evaluation based on the gate current 1/f noise
2008-01-01 P., Magnone; C., Crupi; Iannaccone, Giuseppe; G., Giusi; C., Pace; E., Simoen; C., Claeys
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors
2010-01-01 Fiori, Gianluca; S., Lebegue; A., Betti; P., Michetti; M., Klintenberg; D, Eriksson; Iannaccone, Giuseppe
A picopower temperature-compensated, subthreshold CMOS voltage reference
2014-01-01 Domenico, Albano; Felice, Crupi; Francesca, Cucchi; Iannaccone, Giuseppe
A pipeline of associative memory boards for track finding
2001-01-01 A., Annovi; M. G., Bagliesi; A., Bardi; R., Carosi; M., Dell'Orso; P., Giannetti; Iannaccone, Giuseppe; F., Morsani; M., Pietri; G., Varotto
A QCA cell in silicon-on-insulator technology: theory and experiment
2003-01-01 Macucci, Massimo; M., Gattobigio; Bonci, LUCA ETTORE MARIO; Iannaccone, Giuseppe; F. E., Prins; C., Single; G., Wetekam; D. P., Kern
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| "Atomistic", quantum and ballistic effects in nanoscale MOSFETs | 1-gen-2003 | Fiori, Gianluca; Iannaccone, Giuseppe | |
| "Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET | 1-gen-2003 | Fiori, Gianluca; Iannaccone, Giuseppe | |
| 1/f Noise Characterization of Bilayer MoS2 Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics | 1-gen-2021 | Pimpolari, L.; Calabrese, G.; Conti, S.; Worsley, R.; Majee, S.; Polyushkin, D. K.; Paur, M.; Casiraghi, C.; Mueller, T.; Iannaccone, G.; Macucci, M.; Fiori, G. | |
| 2D Electronics: what can we really expect? | 1-gen-2015 | Fiori, Gianluca; Iannaccone, Giuseppe | |
| 2D materials-based electronics: where do we go from here? | 1-gen-2015 | Fiori, Gianluca; Iannaccone, Giuseppe | |
| 3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory | 1-gen-2006 | Lisieri, M; Fiori, Gianluca; Iannaccone, Giuseppe | |
| A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion | 1-gen-2022 | Zambrano, B.; Garzon, E.; Strangio, S.; Iannaccone, G.; Lanuzza, M. | |
| A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations | 1-gen-2007 | G., DE VITA; Iannaccone, Giuseppe | |
| A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference | 1-gen-2011 | L., Magnelli; F., Crupi; P., Corsonello; C., Pace; Iannaccone, Giuseppe | |
| A 220-mV input, 8.6 step-up voltage conversion ratio, 10.45-μW output power, fully integrated switched-capacitor converter for energy harvesting | 1-gen-2017 | Intaschi, Luca; Bruschi, Paolo; Iannaccone, Giuseppe; Dalena, Francesco | |
| A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process, | 1-gen-2006 | G., DE VITA; Iannaccone, Giuseppe; P., Andreani | |
| A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET | 1-gen-2011 | G., Giusi; Iannaccone, Giuseppe; F., Crupi; U., Ravaioli | |
| A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | 1-gen-2009 | P., Palestri; C., Alexander; A., Asenov; V., AUBRY FORTUNA; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; D., Esseni; C., FENOUILLET BERANGER; C., Fiegna; Fiori, Gianluca; A., Ghetti; Iannaccone, Giuseppe; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., SAINT MARTIN; E., Sangiorgi; A., Schenk; L., Selmi; L., Silvestri; P., Toniutti; J., Walczak | |
| A critical review of reduced one-dimensional beam models of piezoelectric composite beams | 1-gen-2019 | Luschi, Luca; Iannaccone, Giuseppe; Pieri, Francesco | |
| A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering , | 1-gen-2011 | G., Giusi; Iannaccone, Giuseppe; F., Crupi | |
| A model for MOS gate stack quality evaluation based on the gate current 1/f noise | 1-gen-2008 | P., Magnone; C., Crupi; Iannaccone, Giuseppe; G., Giusi; C., Pace; E., Simoen; C., Claeys | |
| A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors | 1-gen-2010 | Fiori, Gianluca; S., Lebegue; A., Betti; P., Michetti; M., Klintenberg; D, Eriksson; Iannaccone, Giuseppe | |
| A picopower temperature-compensated, subthreshold CMOS voltage reference | 1-gen-2014 | Domenico, Albano; Felice, Crupi; Francesca, Cucchi; Iannaccone, Giuseppe | |
| A pipeline of associative memory boards for track finding | 1-gen-2001 | A., Annovi; M. G., Bagliesi; A., Bardi; R., Carosi; M., Dell'Orso; P., Giannetti; Iannaccone, Giuseppe; F., Morsani; M., Pietri; G., Varotto | |
| A QCA cell in silicon-on-insulator technology: theory and experiment | 1-gen-2003 | Macucci, Massimo; M., Gattobigio; Bonci, LUCA ETTORE MARIO; Iannaccone, Giuseppe; F. E., Prins; C., Single; G., Wetekam; D. P., Kern |