We are investigating the use of a double side mu-strip silicon crystal for X-ray detection. The detector is 300 mum thick and the read-out pitch is 100 mum for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by Am-241 and Cd-109 sources. Different zones within the 100 mum read-out, pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution, (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values.
|Autori:||BANDETTINI A; BENCIVELLI W; BERTOLUCCI E; BOTTIGLI U; CONTI M; DEL GUERRA A; FANTACCI ME; RANDACCIO P; ROSSO V; RUSSO P; STEFANINI A|
|Titolo:||CHARACTERIZATION OF THE RESPONSE OF A DOUBLE SIDE M-STRIP SILICON DETECTOR TO X-RAYS IN THE DIAGNOSTIC ENERGY-RANGE|
|Anno del prodotto:||1993|
|Digital Object Identifier (DOI):||10.1109/23.256697|
|Appare nelle tipologie:||1.1 Articolo in rivista|