We present the fabrication of suspended silicon nanowires using 1 mum resolution conventional photolithography, anisotropic wet etching and thermal oxidation. A minimum transverse dimension of about 50 nm was achieved in some of the wires. We characterized the wires from the electrical and noise points of view, comparing the behavior at room temperature and at 77 K, and discuss possible hypotheses to explain the observed differences. (C) 2002 Elsevier Science B.V. All rights reserved.
Electrical and noise characterization of suspended silicon wires
MACUCCI, MASSIMO;PELLEGRINI, BRUNO;PENNELLI, GIOVANNI;PIOTTO, MASSIMO
2002-01-01
Abstract
We present the fabrication of suspended silicon nanowires using 1 mum resolution conventional photolithography, anisotropic wet etching and thermal oxidation. A minimum transverse dimension of about 50 nm was achieved in some of the wires. We characterized the wires from the electrical and noise points of view, comparing the behavior at room temperature and at 77 K, and discuss possible hypotheses to explain the observed differences. (C) 2002 Elsevier Science B.V. All rights reserved.File in questo prodotto:
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