The capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) capacitors with an insulating layer of yttria-stabilized zirconia always show drift and hysteresis as a consequence of the measurement procedure. A new measurement method allows one to lock the C-V hysteresis loop around a voltage value independent of the time and of the voltage measurement range. This tracking method is based on an initial measurement of the shift of the C-V plots for both p- and n-type substrates. The method has been used to characterize the electrical properties of MIS capacitors with stabilized zirconia as a dielectric layer. Transmission electron microscopy observations of the structure of zirconia films and YSZ/Si interfaces are also presented.
|Autori:||Bagnoli P; C.Ciofi; A.Diligenti; A.Innamorato; A.Nannini|
|Titolo:||Characterization of YSZ Films by means of C-V Measurements and TEM Observations|
|Anno del prodotto:||1995|
|Digital Object Identifier (DOI):||10.1016/0040-6090(95)06587-3|
|Appare nelle tipologie:||1.1 Articolo in rivista|