GaAs is a semiconductor suitable for room temperature X-ray detection but hitherto has suffered from incomplete charge collection and is affected by noise. Recent GaAs detectors made with LEC material have shown improved charge collection efficiency and energy resolution. In this paper we describe the fabrication process and present the results obtained with 80 mu m thick pad detectors.

SOME NEW RESULTS ON SEMIINSULATING GAAS DETECTORS FOR LOW-ENERGY X-RAYS

BENCIVELLI, VALTER;FANTACCI, MARIA EVELINA;ROSSO, VALERIA;STEFANINI, ARNALDO;
1995

Abstract

GaAs is a semiconductor suitable for room temperature X-ray detection but hitherto has suffered from incomplete charge collection and is affected by noise. Recent GaAs detectors made with LEC material have shown improved charge collection efficiency and energy resolution. In this paper we describe the fabrication process and present the results obtained with 80 mu m thick pad detectors.
Bencivelli, Valter; Bertolucci, E; Bottigli, U; Cola, A; Dauria, S; Fantacci, MARIA EVELINA; Oshea, V; Raine, C; Rosso, Valeria; Smith, K; Stefanini, Arnaldo; Vasanelli, L.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/23196
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