In previous studies, various semi-insulating LEC GaAs crystals were irradiated with photons in the diagnostic energy range (20-100 keV), in view of a possible application in digital radiography. Solid-state and irradiation measurements, together with Monte Carlo simulations, have indicated good candidates for this application among the crystals we have investigated. In this paper we present results concerning the detection characteristics (detection efficiency, charge-collection efficiency and energy resolution as functions of the bias voltage) of one of these materials and the images obtained by a pixel detector made on the same material and a bump-bonded electronic system. RI Cola, Adriano/G-2379-2010
Experimental study of LEC GaAs detectors for X-ray digital radiography
BISOGNI, MARIA GIUSEPPINA;FANTACCI, MARIA EVELINA;ROSSO, VALERIA;
1996-01-01
Abstract
In previous studies, various semi-insulating LEC GaAs crystals were irradiated with photons in the diagnostic energy range (20-100 keV), in view of a possible application in digital radiography. Solid-state and irradiation measurements, together with Monte Carlo simulations, have indicated good candidates for this application among the crystals we have investigated. In this paper we present results concerning the detection characteristics (detection efficiency, charge-collection efficiency and energy resolution as functions of the bias voltage) of one of these materials and the images obtained by a pixel detector made on the same material and a bump-bonded electronic system. RI Cola, Adriano/G-2379-2010I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
