Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs

In this brief, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-electron mobility transistors. Pulsed I - V characteristics and low-frequency-noise measurements are the characterization vehicles used to get a direct insight of the device trap-states. By considering a set of ten samples, device-to-device fluctuation parameters extracted from trap-related measurements (1/ f noise and gate bias instability) are systematically compared with conventional electrical parameters (threshold voltage and ON-current). Two separate trends are identified and ascribed to two different trap families.