MARIAN, DAMIANO Statistiche

MARIAN, DAMIANO  

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Risultati 1 - 20 di 36 (tempo di esecuzione: 0.013 secondi).
Titolo Data di pubblicazione Autore(i) File
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 1-gen-2024 Schneider, Daniel S.; Lucchesi, Leonardo; Reato, Eros; Wang, Zhenyu; Piacentini, Agata; Bolten, Jens; Marian, Damiano; Marin, Enrique G.; Radenovic, Aleksandra; Wang, Zhenxing; Fiori, Gianluca; Kis, Andras; Iannaccone, Giuseppe; Neumaier, Daniel; Lemme, Max C.
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 1-gen-2024 Cannavo', Emmanuele; Marian, Damiano; Marin, Enrique Gonzalez; Tredicucci, Alessandro; Fiori, Gianluca
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure 1-gen-2024 Soriano, D.; Marian, D.; Dubey, P.; Fiori, G.
Electrically tunable lateral spin-valve transistor based on bilayer CrI3 1-gen-2023 Marian, D.; Soriano, D.; Cannavo, E.; Marin, E. G.; Fiori, G.
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 1-gen-2023 Marian, D.; Marin, E. G.; Perucchini, M.; Iannaccone, G.; Fiori, G.
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices 1-gen-2023 Dubey, Prabhat Kumar; Marian, Damiano; Fiori, Gianluca
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 1-gen-2023 Li, Xuefei; Shi, Xinhang; Marian, Damiano; Soriano, David; Cusati, Teresa; Iannaccone, Giuseppe; Fiori, Gianluca; Guo, Qi; Zhao, Wenjie; Wu, Yanqing
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 1-gen-2022 Perucchini, M.; Marian, D.; Marin, E. G.; Cusati, T.; Iannaccone, G.; Fiori, G.
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 1-gen-2022 Piacentini, Agata; Marian, D; Schneider, Ds; Marin, Eg; Wang, Zy; Otto, M; Canto, B; Radenovic, A; Kis, A; Fiori, Gianluca; Lemme, Mc; Neumaier, D
Electric-field controlled spin transport in bilayer CrI3 1-gen-2021 Marian, Damiano; SORIANO HERNANDEZ, David; Marin, Enrique G.; Iannaccone, Giuseppe; Fiori, Gianluca
MoS2/graphene Lateral Heterostructure Field Effect Transistors 1-gen-2021 S Schneider, Daniel; Reato, Eros; Lucchesi, Leonardo; Wang, Zhenyu; Piacetini, Agata; Bolten, Jens; Marian, Damiano; G Marin, Enrique; Radenovic, Aleksandra; Wang, Zhenxing; Fiori, Gianluca; Kis, Andras; Iannaccone, Giuseppe; Neumaier, Daniel; C Lemme, Max
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces 1-gen-2021 Calogero, Gaetano; Marian, Damiano; G Marin, Enrique; Fiori, Gianluca; Iannaccone, Giuseppe
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation 1-gen-2021 Cannavo', Emmanuele; Marian, Damiano; González Marín, Enrique; Iannaccone, Giuseppe; Fiori, Gianluca
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 1-gen-2020 Marin, E. G.; Marian, D.; Perucchini, M.; Fiori, G.; Iannaccone, G.
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons 1-gen-2020 Marian, D.; Marin, E. G.; Iannaccone, G.; Fiori, G.
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 1-gen-2019 Mine, H; Kobayashi, A; Nakamura, T; Inoue, T; Pakdel, S; Marian, D; Gonzalez-Marin, E; Maruyama, S; Katsumoto, S; Fortunelli, A; Palacios, Jj; Haruyama, J
First-principles simulations of FETs based on two-dimensional InSe 1-gen-2018 Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca
Modeling of Electron Devices Based on 2-D Materials 1-gen-2018 Marin, E. G.; Perucchini, M.; Marian, D.; Iannaccone, G.; Fiori, G.
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 1-gen-2018 Perucchini, Marta; Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene 1-gen-2018 Marin, E. G.; Marian, D.; Iannaccone, G.; Fiori, G.