Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2

We propose two transistor concepts based on lateral heterostructures of monolayer MoS2, composed of adjacent regions of 1T (metallic) and 2H (semiconducting) phases, inspired by recent research showing the possibility to obtain such heterostructures by electron-beam irradiation. The first concept, the lateral heterostructure field-effect transistor, exhibits the potential of better performance with respect to the foreseen evolution of CMOS technology, both for high-performance and low-power applications. Performance potential is evaluated by means of detailed multiscale materials and device simulations. The second concept, the planar barristor, also exhibits potential competitive performance with CMOS, and an improvement of orders of magnitude in terms of the main figures of merit with respect to the recently proposed vertical barristor.