Sfoglia per Autore
Characterization and diagnostics of VLSI microstructures
1989-01-01 Bagnoli, PAOLO EMILIO; Basso, Giovanni; Ciofi, Carmine; Diligenti, Alessandro; Macucci, Massimo; M., Mule'; Neri, Bruno; B., Pellegrini; Saletti, Roberto
Very long current transients in reverse-biased almost ideal n/sup +/-p junctions
1989-01-01 Basso, Giovanni; Pellegrini, Bruno; Polignano, Ml; Saletti, Roberto; Terreni, Pierangelo
Spectrometry of very long-current transients in almost ideal silicon p-n junctions
1993-01-01 Basso, Giovanni; Pellegrini, Bruno; Polignano, Ml
Photocurrent transients in almost ideal silicon p-n junctions
1995-01-01 Basso, Giovanni; Pellegrini, Bruno
Ultralow-noise programmable voltage source
1997-01-01 Baracchino, L; Basso, Giovanni; Ciofi, C; Neri, Bruno
Noise in Almost Ideal n+-p Junctions
1997-01-01 Basso, Giovanni; Pellegrini, Bruno
PC Based Low Noise Measurement System for the Chacterization of Ultra Thin Oxide MOS Devices
1998-01-01 Basso, Giovanni; Ciuti, V; Crupi, F; Giannetti, R; Neri, Bruno
Low Frequency Noise and Failure Mechanisms in Microelectronic Devices
1999-01-01 Basso, Giovanni; C., Ciofi; I., Ciofi; F., Crupi; V., Dattilo; Iannaccone, Giuseppe; S., Lombardo; Neri, Bruno
Novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures
1999-01-01 Basso, Giovanni; Crupi, Felice; Neri, Bruno; Giannetti, Romano; Lombardo, Salvo
A Novel Characterization Tool for the Study of Dielectric Breakdown of Ultra-Thin Oxide MOS Structures
1999-01-01 Basso, Giovanni; Crupi, F.; Giannetti, R.; Lombardo, S.; Neri, Bruno
A detailed Analysis of the Pre-Breakdown Current Fluctuations in Thin Oxide MOS Capacitors
1999-01-01 Neri, Bruno; Crupi, F.; Basso, Giovanni; Lombardo, S.
Ultra Low-Noise Cryogenic Amplifier for Shot Noise Measurements
2001-01-01 Basso, Giovanni; M., Casarin; Macucci, Massimo; B., Pellegrini
Fondamenti di elettronica
2001-01-01 Basso, Giovanni; Neri, Bruno; Roncella, Roberto; Saletti, Roberto; Terreni, Pierangelo
Concurrent effects of Pauli and Coulomb interaction in resonant tunneling diodes at low bias and low temperature
2003-01-01 Iannaccone, Giuseppe; Macucci, Massimo; Basso, Giovanni; Pellegrini, Bruno
Measurement Techniques of Shot Noise in Nanostructures
2003-01-01 Pellegrini, Bruno; Basso, Giovanni; Macucci, Massimo
Numerical investigation of shot-noise suppression in diffusive conductors
2003-01-01 Macucci, Massimo; Iannaccone, Giuseppe; Basso, Giovanni; Pellegrini, Bruno
Shot Noise in Mesoscopic Devices and Quantum Dot Networks
2004-01-01 Macucci, M.; Marconcini, P.; Iannaccone, G.; Gattobigio, M.; Basso, G.; Pellegrini, B.
Techniques for high-sensitivity measurements of shot noise in nanostructures
2004-01-01 Pellegrini, Bruno; Basso, Giovanni; Macucci, Massimo
Elettronica di Millman 3ed
2005-01-01 Basso, Giovanni; Roncella, Roberto; Saletti, Roberto
Transition between Pauli Exclusion and Coulomb Interaction in the Noise Behavior of Resonant Tunneling Diodes
2005-01-01 I. A., Maione; Basso, Giovanni; Macucci, Massimo; Iannaccone, Giuseppe; Pellegrini, Bruno
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Characterization and diagnostics of VLSI microstructures | 1-gen-1989 | Bagnoli, PAOLO EMILIO; Basso, Giovanni; Ciofi, Carmine; Diligenti, Alessandro; Macucci, Massimo; M., Mule'; Neri, Bruno; B., Pellegrini; Saletti, Roberto | |
Very long current transients in reverse-biased almost ideal n/sup +/-p junctions | 1-gen-1989 | Basso, Giovanni; Pellegrini, Bruno; Polignano, Ml; Saletti, Roberto; Terreni, Pierangelo | |
Spectrometry of very long-current transients in almost ideal silicon p-n junctions | 1-gen-1993 | Basso, Giovanni; Pellegrini, Bruno; Polignano, Ml | |
Photocurrent transients in almost ideal silicon p-n junctions | 1-gen-1995 | Basso, Giovanni; Pellegrini, Bruno | |
Ultralow-noise programmable voltage source | 1-gen-1997 | Baracchino, L; Basso, Giovanni; Ciofi, C; Neri, Bruno | |
Noise in Almost Ideal n+-p Junctions | 1-gen-1997 | Basso, Giovanni; Pellegrini, Bruno | |
PC Based Low Noise Measurement System for the Chacterization of Ultra Thin Oxide MOS Devices | 1-gen-1998 | Basso, Giovanni; Ciuti, V; Crupi, F; Giannetti, R; Neri, Bruno | |
Low Frequency Noise and Failure Mechanisms in Microelectronic Devices | 1-gen-1999 | Basso, Giovanni; C., Ciofi; I., Ciofi; F., Crupi; V., Dattilo; Iannaccone, Giuseppe; S., Lombardo; Neri, Bruno | |
Novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures | 1-gen-1999 | Basso, Giovanni; Crupi, Felice; Neri, Bruno; Giannetti, Romano; Lombardo, Salvo | |
A Novel Characterization Tool for the Study of Dielectric Breakdown of Ultra-Thin Oxide MOS Structures | 1-gen-1999 | Basso, Giovanni; Crupi, F.; Giannetti, R.; Lombardo, S.; Neri, Bruno | |
A detailed Analysis of the Pre-Breakdown Current Fluctuations in Thin Oxide MOS Capacitors | 1-gen-1999 | Neri, Bruno; Crupi, F.; Basso, Giovanni; Lombardo, S. | |
Ultra Low-Noise Cryogenic Amplifier for Shot Noise Measurements | 1-gen-2001 | Basso, Giovanni; M., Casarin; Macucci, Massimo; B., Pellegrini | |
Fondamenti di elettronica | 1-gen-2001 | Basso, Giovanni; Neri, Bruno; Roncella, Roberto; Saletti, Roberto; Terreni, Pierangelo | |
Concurrent effects of Pauli and Coulomb interaction in resonant tunneling diodes at low bias and low temperature | 1-gen-2003 | Iannaccone, Giuseppe; Macucci, Massimo; Basso, Giovanni; Pellegrini, Bruno | |
Measurement Techniques of Shot Noise in Nanostructures | 1-gen-2003 | Pellegrini, Bruno; Basso, Giovanni; Macucci, Massimo | |
Numerical investigation of shot-noise suppression in diffusive conductors | 1-gen-2003 | Macucci, Massimo; Iannaccone, Giuseppe; Basso, Giovanni; Pellegrini, Bruno | |
Shot Noise in Mesoscopic Devices and Quantum Dot Networks | 1-gen-2004 | Macucci, M.; Marconcini, P.; Iannaccone, G.; Gattobigio, M.; Basso, G.; Pellegrini, B. | |
Techniques for high-sensitivity measurements of shot noise in nanostructures | 1-gen-2004 | Pellegrini, Bruno; Basso, Giovanni; Macucci, Massimo | |
Elettronica di Millman 3ed | 1-gen-2005 | Basso, Giovanni; Roncella, Roberto; Saletti, Roberto | |
Transition between Pauli Exclusion and Coulomb Interaction in the Noise Behavior of Resonant Tunneling Diodes | 1-gen-2005 | I. A., Maione; Basso, Giovanni; Macucci, Massimo; Iannaccone, Giuseppe; Pellegrini, Bruno |
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