CINECA IRIS Institutional Research Information System

LOGOTETA, DEMETRIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.497
AS - Asia 762
EU - Europa 511
SA - Sud America 151
AF - Africa 57
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.979
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Nazione #
US - Stati Uniti d'America 2.460
SG - Singapore 272
CN - Cina 209
HK - Hong Kong 159
BR - Brasile 140
IT - Italia 136
SE - Svezia 129
DE - Germania 46
BG - Bulgaria 45
VN - Vietnam 37
GB - Regno Unito 35
CA - Canada 28
RU - Federazione Russa 26
FI - Finlandia 25
TR - Turchia 23
FR - Francia 22
UA - Ucraina 22
CI - Costa d'Avorio 20
SN - Senegal 19
JP - Giappone 15
BD - Bangladesh 6
BE - Belgio 5
ZA - Sudafrica 5
IN - India 4
IQ - Iraq 4
KE - Kenya 4
KR - Corea 4
MA - Marocco 4
AE - Emirati Arabi Uniti 3
AT - Austria 3
CH - Svizzera 3
MX - Messico 3
NL - Olanda 3
PK - Pakistan 3
SA - Arabia Saudita 3
VE - Venezuela 3
AR - Argentina 2
EC - Ecuador 2
ES - Italia 2
NP - Nepal 2
OM - Oman 2
PE - Perù 2
PL - Polonia 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
UZ - Uzbekistan 2
AZ - Azerbaigian 1
BB - Barbados 1
BO - Bolivia 1
BY - Bielorussia 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EG - Egitto 1
ET - Etiopia 1
HN - Honduras 1
HU - Ungheria 1
ID - Indonesia 1
IL - Israele 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LA - Repubblica Popolare Democratica del Laos 1
LT - Lituania 1
MY - Malesia 1
NG - Nigeria 1
PT - Portogallo 1
PY - Paraguay 1
RS - Serbia 1
RW - Ruanda 1
SY - Repubblica araba siriana 1
TC - Turks e Caicos 1
TM - Turkmenistan 1
TN - Tunisia 1
VC - Saint Vincent e Grenadine 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 3.979
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Città #
Dallas 694
Ann Arbor 236
Ashburn 178
Hong Kong 157
Woodbridge 157
Fairfield 151
Singapore 139
Houston 125
San Jose 110
Santa Clara 109
Chandler 98
Serra 58
Wilmington 56
Beijing 53
Seattle 51
Shanghai 46
Cambridge 44
Sofia 44
New York 39
Los Angeles 29
Jacksonville 28
Boardman 24
Ottawa 22
Milan 21
Princeton 21
Abidjan 20
Dakar 19
Lawrence 19
Lauterbourg 17
Izmir 15
Nanjing 15
Council Bluffs 14
Medford 13
Tokyo 13
Munich 12
São Paulo 12
Dearborn 10
Ho Chi Minh City 10
Jüchen 9
Orem 9
Dong Ket 8
Fuzhou 8
Istanbul 8
Shenyang 8
Des Moines 7
Hanoi 7
Redondo Beach 7
Chicago 6
Frankfurt am Main 6
Pisa 6
Rio de Janeiro 6
Belo Horizonte 5
Brussels 5
Columbus 5
Denver 5
Lappeenranta 5
London 5
Nanchang 5
Quanzhou 5
San Diego 5
The Dalles 5
Bremen 4
Buffalo 4
Florence 4
Hefei 4
Las Vegas 4
Nairobi 4
Norwalk 4
Zhengzhou 4
Bauru 3
Bern 3
Brasília 3
Carrara 3
Falls Church 3
Hangzhou 3
Kunming 3
Manchester 3
Memphis 3
Montreal 3
Phoenix 3
San Francisco 3
Seoul 3
São Bernardo do Campo 3
Turku 3
Agadir 2
Amsterdam 2
Atlanta 2
Auburn Hills 2
Betim 2
Boston 2
Central District 2
Curitiba 2
Da Nang 2
Franca 2
Grafing 2
Guangzhou 2
Hebei 2
Indiana 2
Jaú 2
Jiaxing 2
Totale 3.133
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Nome #
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD 768
Effect of imperfections on the tunneling enhancement phenomenon in symmetric double quantum dots 229
High-performance solution of the transport problem in a graphene armchair structure with a generic potential 225
Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy 215
Numerical solution of the Dirac equation for an armchair graphene nanoribbon in the presence of a transversally variable potential 205
Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots 182
Numerical simulation of scanning gate spectroscopy in bilayer graphene in the Quantum Hall regime 179
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 175
Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation 172
Using gate voltages to tune the noise properties of a mesoscopic cavity 168
Sinc-based method for an efficient solution in the direct space of quantum wave equations with periodic boundary conditions 163
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 163
Effect of boron doping on the characteristics of graphene FETs 151
Numerical simulation of shot noise in disordered graphene 148
Transport and noise behavior of cascaded realistic tunnel barriers 145
Efficient numerical method to study the transport behavior of a graphene armchair nanoribbon in the presence of a generical potential using an envelope function approach 141
Envelope-function-based analysis of the dependence of shot noise on the gate voltage in disordered graphene samples 138
Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions 106
Is the regine with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimesnions? 80
null 79
null 76
Vertical transport in graphene-hexagonal boron nitride heterostructure devices 74
IS THE REGIME WITH SHOT NOISE SUPPRESSION BY A FACTOR 1/3 ACHIEVABLE IN SEMICONDUCTOR DEVICES WITH MESOSCOPIC DIMENSIONS? 61
Totale 4.043
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Categoria #
all - tutte 10.172
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.172
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022223 4 6 10 19 35 35 7 11 9 4 43 40
2022/2023304 30 44 28 19 30 29 3 17 75 1 18 10
2023/2024154 15 14 23 7 24 26 2 4 3 4 15 17
2024/2025782 4 27 2 68 86 62 118 45 88 75 65 142
2025/20261.311 53 62 709 28 92 86 116 35 26 63 34 7
2026/202711 11 0 0 0 0 0 0 0 0 0 0 0
Totale 4.043