Sfoglia per Autore
Effect of boron doping on the characteristics of graphene FETs
2012-01-01 Marconcini, Paolo; Cresti, Alessandro; Triozon, François; Biel, Blanca; Niquet, Yann Michel; Logoteta, Demetrio; Roche, Stephan
Computer-aided simulation of nanoelectronic devices: the importance of the choice of the physical model
2012-01-01 Marconcini, Paolo
Efficient numerical method to study the transport behavior of a graphene armchair nanoribbon in the presence of a generical potential using an envelope function approach
2012-01-01 Logoteta, Demetrio; Marconcini, Paolo
A hierarchical approach to computer-aided simulation of nanoelectronic devices: the case of silicon nanowire transistors
2012-01-01 Marconcini, Paolo
Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy
2012-01-01 Connolly, M. R.; Puddy, R. K.; Logoteta, Demetrio; Marconcini, Paolo; Roy, M; Griffiths, J. P.; Jones, G. A. C.; Maksym, P. A.; Macucci, Massimo; Smith, C. G.
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics
2012-01-01 Marconcini, Paolo; A., Cresti; F., Triozon; Fiori, Gianluca; B., Biel; Y. M., Niquet; Macucci, Massimo; S., Roche
Is the regine with shot noise suppression by a factor 1/3 achievable in semiconductor devices with mesoscopic dimesnions?
2012-01-01 Marconcini, Paolo; Macucci, Massimo; Logoteta, Demetrio; Totaro, M.
Numerical simulation of scanning gate spectroscopy in bilayer graphene in the Quantum Hall regime
2012-01-01 Logoteta, Demetrio; Marconcini, Paolo; Connolly, M. R.; Smith, C. G.; Macucci, Massimo
Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors
2012-01-01 Marconcini, Paolo; A., Cresti; F., Triozon; Fiori, Gianluca; B., Biel; Y. M., Niquet; Macucci, Massimo; S., Roche
Symmetry-dependent transport behavior of graphene double dots
2013-01-01 Marconcini, Paolo; Macucci, Massimo
Improvement of the accuracy of noise measurements by the two-amplifier correlation method
2013-01-01 Pellegrini, Bruno; Basso, Giovanni; Fiori, Gianluca; Macucci, Massimo; I. A., Maione; Marconcini, Paolo
Numerical simulation of shot noise in disordered graphene
2013-01-01 Logoteta, Demetrio; Marconcini, Paolo; Macucci, Massimo
A fast approach to the simulation of silicon nanowire transistors
2013-01-01 Marconcini, Paolo
The role of the choice of the physical model in the optimization of nanoelectronic device simulators
2013-01-01 Marconcini, Paolo
Effect of potential fluctuations on shot noise suppression in mesoscopic cavities
2013-01-01 Marconcini, Paolo; M., Totaro; Basso, Giovanni; Macucci, Massimo
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling
2013-01-01 D'Amico, Pino; Marconcini, P.; Fiori, G.; Iannaccone, G.
Effect of potential disorder on shot noise suppression in nanoscale devices
2013-01-01 Marconcini, Paolo
Sinc-based method for an efficient solution in the direct space of quantum wave equations with periodic boundary conditions
2013-01-01 Marconcini, Paolo; Logoteta, Demetrio; Macucci, Massimo
Influence of symmetry on the conductance of a graphene double dot
2013-01-01 Marconcini, Paolo
Solution of quantum wave equations using cardinal sine functions
2013-01-01 Marconcini, Paolo
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