CINECA IRIS Institutional Research Information System

STRANGIO, SEBASTIANO
 Distribuzione geografica
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Continente #
NA - Nord America 21.404
AS - Asia 2.327
EU - Europa 1.672
SA - Sud America 543
Continente sconosciuto - Info sul continente non disponibili 158
AF - Africa 97
OC - Oceania 3
Totale 26.204
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Nazione #
US - Stati Uniti d'America 16.665
CA - Canada 4.676
IT - Italia 655
CN - Cina 616
SG - Singapore 567
HK - Hong Kong 454
BR - Brasile 413
SE - Svezia 349
VN - Vietnam 247
DE - Germania 128
FR - Francia 100
GB - Regno Unito 95
BG - Bulgaria 91
IN - India 81
BE - Belgio 56
JP - Giappone 49
RU - Federazione Russa 48
AR - Argentina 42
BD - Bangladesh 42
KR - Corea 41
TR - Turchia 38
EC - Ecuador 29
IQ - Iraq 29
FI - Finlandia 26
SA - Arabia Saudita 23
NL - Olanda 22
ID - Indonesia 19
PK - Pakistan 19
MX - Messico 18
PL - Polonia 17
ES - Italia 16
AT - Austria 15
CO - Colombia 15
MA - Marocco 15
CH - Svizzera 14
VE - Venezuela 14
UA - Ucraina 13
ZA - Sudafrica 12
CI - Costa d'Avorio 11
JM - Giamaica 11
PY - Paraguay 11
UZ - Uzbekistan 11
SN - Senegal 10
TN - Tunisia 10
TW - Taiwan 10
AE - Emirati Arabi Uniti 8
DZ - Algeria 8
KE - Kenya 8
PE - Perù 8
CR - Costa Rica 7
ET - Etiopia 7
NP - Nepal 7
OM - Oman 7
CL - Cile 6
EG - Egitto 6
IE - Irlanda 6
JO - Giordania 6
PH - Filippine 6
TT - Trinidad e Tobago 6
LB - Libano 5
MY - Malesia 5
AZ - Azerbaigian 4
BY - Bielorussia 4
IL - Israele 4
KG - Kirghizistan 4
KZ - Kazakistan 4
PS - Palestinian Territory 4
SV - El Salvador 4
GR - Grecia 3
GT - Guatemala 3
HN - Honduras 3
IR - Iran 3
PA - Panama 3
RS - Serbia 3
SY - Repubblica araba siriana 3
AL - Albania 2
BS - Bahamas 2
CY - Cipro 2
DO - Repubblica Dominicana 2
KW - Kuwait 2
LT - Lituania 2
MU - Mauritius 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
QA - Qatar 2
TH - Thailandia 2
UY - Uruguay 2
AO - Angola 1
AU - Australia 1
BB - Barbados 1
BH - Bahrain 1
BJ - Benin 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BZ - Belize 1
CV - Capo Verde 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
EU - Europa 1
Totale 26.035
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Città #
Dallas 13.175
Montreal 4.642
Hong Kong 437
Ashburn 397
Fairfield 302
Singapore 296
Shanghai 260
San Jose 252
Santa Clara 248
Woodbridge 169
Serra 168
Seattle 135
Milan 115
Wilmington 115
Houston 114
Cambridge 109
Los Angeles 107
Chandler 104
Sofia 85
Ho Chi Minh City 72
Beijing 60
New York 60
Council Bluffs 59
Pisa 58
Frankfurt am Main 55
Rome 55
Boardman 52
Hanoi 51
Princeton 50
London 45
Hefei 43
Lawrence 38
Tokyo 38
Brussels 33
Lauterbourg 32
Seoul 31
Chicago 30
Ann Arbor 29
Istanbul 26
Medford 24
Redondo Beach 24
São Paulo 23
Dearborn 21
Marseille 21
Des Moines 20
North Bergen 20
San Vincenzo 19
Buffalo 17
Munich 17
Warsaw 17
Baghdad 15
Atlanta 14
Haiphong 13
Pietrasanta 13
San Diego 13
Easley 12
Turku 12
West Jordan 12
Abidjan 11
Biên Hòa 11
Pistoia 11
Rio de Janeiro 11
Belo Horizonte 10
Chennai 10
Dakar 10
Florence 10
Hyderabad 10
Las Vegas 10
Orem 10
Ribeirão Preto 10
Amsterdam 9
Berlin 9
Dhaka 9
Helsinki 9
Lucca 9
Porto Alegre 9
Tashkent 9
Zurich 9
Denver 8
Guayaquil 8
Nuremberg 8
Phoenix 8
Rende 8
Taipei 8
Tremestieri Etneo 8
Addis Ababa 7
Brasília 7
Fuzhou 7
Ottawa 7
Paris 7
Vienna 7
Aci Catena 6
Bengaluru 6
Brooklyn 6
Campinas 6
Columbus 6
Jeddah 6
Lahore 6
Lessolo 6
Lima 6
Totale 22.822
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Nome #
A 0.05 mm2, 350 mV, 14 nW fully-integrated temperature sensor in 180-nm CMOS 8.480
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion 8.364
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications 878
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2 729
12-bit Delta-Sigma ADC Operating at a Temperature of Up to 250 °C in Standard 0.18 μm SOI CMOS 478
A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design 303
A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks 294
An Ultralow-Voltage Energy-Efficient Level Shifter 206
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 203
Pixel Design Driven Performance Improvement in 4T CMOS Image Sensors: Dark Current Reduction and Full-Well Enhancement 200
Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits 196
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 193
Electromagnetic Design of an Inductive Wireless Power Transfer System for Endoscopic Capsule 186
Design of Ultra-Low Voltage/Power Circuits and Systems 186
Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits 185
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 183
Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs 182
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM 181
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability 174
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 174
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 172
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime 153
Digital and analog TFET circuits: Design and benchmark 153
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages 153
Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS 153
Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C 151
Early assessment of tunnel-FET for energy-efficient logic circuits 151
Load Modulation Feedback in Adaptive Matching Networks for Low-Coupling Wireless Power Transfer Systems 147
Performance analysis of different SRAM cell topologies employing tunnel-FETs 147
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 146
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 144
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors 142
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 141
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires 140
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 138
Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks 135
Single Defect Discharge Events in Vertical-Nanowire Tunnel-FETs 126
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation 124
The case for hybrid analog neuromorphic chips based on silicon and 2D materials 120
Single-poly floating-gate memory cell options for analog neural networks 119
Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing 116
A 6.78 MHz Maximum Efficiency Tracking Active Rectifier with Load Modulation Control for Wireless Power Transfer to Implantable Medical Devices 111
Data Loggers for High-Temperature Industrial Environments 108
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis 108
All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification 107
null 94
Temperature-Resilient Analog Neuromorphic Chip in Single-Polysilicon CMOS Technology 89
High-Temperature 13-Bit Delta-Sigma ADC in Standard SOI CMOS Operating Up to 260°C 88
Mixed device-circuit simulations of 6T/8T SRAM cells employing tunnel-FETs 85
High-Entropy Analog-Based Strong Physical Unclonable Function With Area-to-Entropy-Ratio of 166 F2/bit 76
Fast prototyping of memristors for ReRAMs and neuromorphic computing 75
Power electronics based on wide-bandgap semiconductors: opportunities and challenges 74
High-Entropy Analog-Based Strong PUF Reaching 166 F2/Bit Area-to-Entropy-Ratio 73
In vivo validation of Wireless Power Transfer System for Magnetically Controlled Robotic Capsule Endoscopy 66
A Physical Unclonable Function Based on a Differential Subthreshold PMOS Array with 9.73 × 10−4 Stabilized BER and 1.3 pJ/bit in 65 nm 52
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Totale 26.204
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Categoria #
all - tutte 41.935
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.935
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022524 0 0 4 28 107 57 40 14 46 35 70 123
2022/2023552 89 78 56 13 37 75 27 18 124 5 19 11
2023/20245.132 55 45 46 29 105 44 41 13 8 4.634 23 89
2024/20252.063 32 49 41 81 167 147 318 59 191 178 210 590
2025/202615.720 102 3.112 10.387 642 218 173 299 130 170 330 95 62
2026/2027771 344 296 131 0 0 0 0 0 0 0 0 0
Totale 26.204