CINECA IRIS Institutional Research Information System

STRANGIO, SEBASTIANO
 Distribuzione geografica
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Continente #
NA - Nord America 20.256
AS - Asia 1.945
EU - Europa 1.418
SA - Sud America 486
AF - Africa 82
OC - Oceania 3
Continente sconosciuto - Info sul continente non disponibili 2
Totale 24.192
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Nazione #
US - Stati Uniti d'America 15.564
CA - Canada 4.652
CN - Cina 555
IT - Italia 533
SG - Singapore 472
HK - Hong Kong 422
BR - Brasile 385
SE - Svezia 320
VN - Vietnam 176
DE - Germania 106
BG - Bulgaria 88
GB - Regno Unito 81
FR - Francia 68
IN - India 59
BE - Belgio 56
RU - Federazione Russa 45
KR - Corea 37
TR - Turchia 34
AR - Argentina 31
JP - Giappone 26
BD - Bangladesh 25
FI - Finlandia 24
EC - Ecuador 22
NL - Olanda 20
SA - Arabia Saudita 19
IQ - Iraq 17
PL - Polonia 17
MX - Messico 16
AT - Austria 14
ID - Indonesia 14
PK - Pakistan 13
CO - Colombia 12
CI - Costa d'Avorio 11
MA - Marocco 11
ZA - Sudafrica 11
ES - Italia 10
PY - Paraguay 10
UA - Ucraina 10
VE - Venezuela 10
SN - Senegal 9
TW - Taiwan 9
KE - Kenya 8
UZ - Uzbekistan 8
DZ - Algeria 7
PE - Perù 7
AE - Emirati Arabi Uniti 6
EG - Egitto 6
IE - Irlanda 6
NP - Nepal 6
TN - Tunisia 6
CH - Svizzera 5
CL - Cile 5
OM - Oman 5
AZ - Azerbaigian 4
CR - Costa Rica 4
KG - Kirghizistan 4
KZ - Kazakistan 4
MY - Malesia 4
PS - Palestinian Territory 4
ET - Etiopia 3
IL - Israele 3
IR - Iran 3
JO - Giordania 3
PA - Panama 3
TT - Trinidad e Tobago 3
AL - Albania 2
BS - Bahamas 2
BY - Bielorussia 2
CY - Cipro 2
DO - Repubblica Dominicana 2
GR - Grecia 2
HN - Honduras 2
JM - Giamaica 2
KW - Kuwait 2
LB - Libano 2
LT - Lituania 2
MU - Mauritius 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
QA - Qatar 2
RS - Serbia 2
SV - El Salvador 2
UY - Uruguay 2
AO - Angola 1
AU - Australia 1
BB - Barbados 1
BJ - Benin 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CV - Capo Verde 1
CZ - Repubblica Ceca 1
EE - Estonia 1
EU - Europa 1
GA - Gabon 1
GT - Guatemala 1
GY - Guiana 1
LU - Lussemburgo 1
LV - Lettonia 1
MK - Macedonia 1
MR - Mauritania 1
Totale 24.184
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Città #
Dallas 13.171
Montreal 4.635
Hong Kong 411
Ashburn 312
Fairfield 302
Shanghai 259
Santa Clara 235
Singapore 230
Woodbridge 169
Serra 168
Seattle 133
Wilmington 115
Houston 111
Cambridge 108
Chandler 104
Milan 88
Sofia 84
Los Angeles 76
Beijing 56
Boardman 52
Princeton 49
New York 48
Rome 48
Ho Chi Minh City 46
Frankfurt am Main 44
Hefei 43
London 43
Pisa 43
Lawrence 38
Brussels 33
Hanoi 33
Seoul 31
Ann Arbor 29
Istanbul 25
Chicago 24
Redondo Beach 24
Medford 23
Dearborn 21
Marseille 20
North Bergen 20
Tokyo 20
Des Moines 19
San Jose 19
San Vincenzo 19
Munich 17
São Paulo 17
Warsaw 17
Pietrasanta 13
San Diego 13
Easley 12
Turku 12
West Jordan 12
Abidjan 11
Buffalo 11
Baghdad 10
Belo Horizonte 10
Dakar 9
Florence 9
Haiphong 9
Hyderabad 9
Pistoia 9
Porto Alegre 9
Rio de Janeiro 9
Amsterdam 8
Dhaka 8
Helsinki 8
Nuremberg 8
Rende 8
Ribeirão Preto 8
Chennai 7
Council Bluffs 7
Fuzhou 7
Lucca 7
Paris 7
Taipei 7
Aci Catena 6
Biên Hòa 6
Brasília 6
Campinas 6
Guayaquil 6
Jeddah 6
Lessolo 6
Nairobi 6
Ogden 6
Osaka 6
Phoenix 6
Tashkent 6
Vienna 6
Volta Redonda 6
Dong Ket 5
Lima 5
Manaus 5
Ottawa 5
Praia Grande 5
San Giuliano Terme 5
Baku 4
Bengaluru 4
Bishkek 4
Bogotá 4
Bologna 4
Totale 22.023
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Nome #
A 0.05 mm2, 350 mV, 14 nW fully-integrated temperature sensor in 180-nm CMOS 8.409
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion 8.287
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications 864
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2 698
A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design 282
A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks 272
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 192
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 182
Pixel Design Driven Performance Improvement in 4T CMOS Image Sensors: Dark Current Reduction and Full-Well Enhancement 182
An Ultralow-Voltage Energy-Efficient Level Shifter 179
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM 169
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 167
Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits 164
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 163
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 162
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability 159
Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs 157
Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits 154
Design of Ultra-Low Voltage/Power Circuits and Systems 147
Digital and analog TFET circuits: Design and benchmark 143
Electromagnetic Design of an Inductive Wireless Power Transfer System for Endoscopic Capsule 135
Early assessment of tunnel-FET for energy-efficient logic circuits 134
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime 133
Performance analysis of different SRAM cell topologies employing tunnel-FETs 131
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 131
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages 130
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors 128
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 127
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires 127
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 126
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 126
Single Defect Discharge Events in Vertical-Nanowire Tunnel-FETs 115
Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks 113
Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS 110
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation 107
Load Modulation Feedback in Adaptive Matching Networks for Low-Coupling Wireless Power Transfer Systems 106
Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing 98
Single-poly floating-gate memory cell options for analog neural networks 98
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis 97
Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C 94
null 94
A 6.78 MHz Maximum Efficiency Tracking Active Rectifier with Load Modulation Control for Wireless Power Transfer to Implantable Medical Devices 93
The case for hybrid analog neuromorphic chips based on silicon and 2D materials 91
All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification 91
Data Loggers for High-Temperature Industrial Environments 71
Mixed device-circuit simulations of 6T/8T SRAM cells employing tunnel-FETs 71
High-Temperature 13-Bit Delta-Sigma ADC in Standard SOI CMOS Operating Up to 260°C 62
12-bit Delta-Sigma ADC Operating at a Temperature of Up to 250 °C in Standard 0.18 μm SOI CMOS 44
Temperature-Resilient Analog Neuromorphic Chip in Single-Polysilicon CMOS Technology 39
High-Entropy Analog-Based Strong PUF Reaching 166 F2/Bit Area-to-Entropy-Ratio 37
Power electronics based on wide-bandgap semiconductors: opportunities and challenges 37
null 30
High-Entropy Analog-Based Strong Physical Unclonable Function With Area-to-Entropy-Ratio of 166 F2/bit 27
A Physical Unclonable Function Based on a Differential Subthreshold PMOS Array with 9.73 × 10−4 Stabilized BER and 1.3 pJ/bit in 65 nm 24
null 22
In vivo validation of Wireless Power Transfer System for Magnetically Controlled Robotic Capsule Endoscopy 8
Fast prototyping of memristors for ReRAMs and neuromorphic computing 1
Totale 24.340
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Categoria #
all - tutte 37.272
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.272
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021365 0 0 0 0 0 57 44 20 134 29 47 34
2021/2022564 18 22 4 28 107 57 40 14 46 35 70 123
2022/2023552 89 78 56 13 37 75 27 18 124 5 19 11
2023/20245.132 55 45 46 29 105 44 41 13 8 4.634 23 89
2024/20252.063 32 49 41 81 167 147 318 59 191 178 210 590
2025/202614.627 102 3.112 10.387 642 218 166 0 0 0 0 0 0
Totale 24.340