CINECA IRIS Institutional Research Information System

STRANGIO, SEBASTIANO
 Distribuzione geografica
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Continente #
NA - Nord America 21.264
AS - Asia 2.315
EU - Europa 1.665
SA - Sud America 542
Continente sconosciuto - Info sul continente non disponibili 158
AF - Africa 97
OC - Oceania 3
Totale 26.044
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Nazione #
US - Stati Uniti d'America 16.534
CA - Canada 4.672
IT - Italia 649
CN - Cina 614
SG - Singapore 567
HK - Hong Kong 454
BR - Brasile 412
SE - Svezia 349
VN - Vietnam 247
DE - Germania 128
FR - Francia 100
GB - Regno Unito 95
BG - Bulgaria 91
IN - India 77
BE - Belgio 56
JP - Giappone 49
RU - Federazione Russa 48
AR - Argentina 42
BD - Bangladesh 42
KR - Corea 41
TR - Turchia 37
EC - Ecuador 29
IQ - Iraq 29
FI - Finlandia 26
SA - Arabia Saudita 23
NL - Olanda 21
PK - Pakistan 19
MX - Messico 18
PL - Polonia 17
ES - Italia 16
AT - Austria 15
CO - Colombia 15
ID - Indonesia 15
MA - Marocco 15
CH - Svizzera 14
VE - Venezuela 14
UA - Ucraina 13
ZA - Sudafrica 12
CI - Costa d'Avorio 11
PY - Paraguay 11
UZ - Uzbekistan 11
SN - Senegal 10
TN - Tunisia 10
TW - Taiwan 10
JM - Giamaica 9
AE - Emirati Arabi Uniti 8
DZ - Algeria 8
KE - Kenya 8
PE - Perù 8
ET - Etiopia 7
NP - Nepal 7
CL - Cile 6
CR - Costa Rica 6
EG - Egitto 6
IE - Irlanda 6
JO - Giordania 6
OM - Oman 6
PH - Filippine 6
LB - Libano 5
MY - Malesia 5
TT - Trinidad e Tobago 5
AZ - Azerbaigian 4
BY - Bielorussia 4
IL - Israele 4
KG - Kirghizistan 4
KZ - Kazakistan 4
PS - Palestinian Territory 4
SV - El Salvador 4
GR - Grecia 3
GT - Guatemala 3
IR - Iran 3
PA - Panama 3
RS - Serbia 3
SY - Repubblica araba siriana 3
AL - Albania 2
BS - Bahamas 2
CY - Cipro 2
DO - Repubblica Dominicana 2
HN - Honduras 2
KW - Kuwait 2
LT - Lituania 2
MU - Mauritius 2
NG - Nigeria 2
NZ - Nuova Zelanda 2
QA - Qatar 2
TH - Thailandia 2
UY - Uruguay 2
AO - Angola 1
AU - Australia 1
BB - Barbados 1
BH - Bahrain 1
BJ - Benin 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BZ - Belize 1
CV - Capo Verde 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
EU - Europa 1
Totale 25.875
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Città #
Dallas 13.174
Montreal 4.642
Hong Kong 437
Ashburn 378
Fairfield 302
Singapore 296
Shanghai 260
San Jose 251
Santa Clara 245
Woodbridge 169
Serra 168
Seattle 135
Wilmington 115
Houston 114
Milan 114
Cambridge 109
Chandler 104
Los Angeles 102
Sofia 85
Ho Chi Minh City 72
Beijing 59
Pisa 58
New York 57
Frankfurt am Main 55
Rome 55
Boardman 52
Hanoi 51
Princeton 50
Council Bluffs 49
London 45
Hefei 43
Lawrence 38
Tokyo 38
Brussels 33
Lauterbourg 32
Seoul 31
Ann Arbor 29
Chicago 29
Istanbul 26
Medford 24
Redondo Beach 24
São Paulo 23
Dearborn 21
Marseille 21
Des Moines 20
North Bergen 20
San Vincenzo 19
Buffalo 17
Munich 17
Warsaw 17
Baghdad 15
Atlanta 14
Haiphong 13
Pietrasanta 13
San Diego 13
Easley 12
Turku 12
West Jordan 12
Abidjan 11
Biên Hòa 11
Pistoia 11
Rio de Janeiro 11
Belo Horizonte 10
Chennai 10
Dakar 10
Florence 10
Hyderabad 10
Las Vegas 10
Orem 10
Ribeirão Preto 10
Berlin 9
Dhaka 9
Helsinki 9
Lucca 9
Porto Alegre 9
Tashkent 9
Zurich 9
Amsterdam 8
Guayaquil 8
Nuremberg 8
Phoenix 8
Rende 8
Taipei 8
Tremestieri Etneo 8
Addis Ababa 7
Brasília 7
Denver 7
Fuzhou 7
Paris 7
Vienna 7
Aci Catena 6
Brooklyn 6
Campinas 6
Columbus 6
Jeddah 6
Lahore 6
Lessolo 6
Lima 6
Nairobi 6
Ogden 6
Totale 22.774
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Nome #
A 0.05 mm2, 350 mV, 14 nW fully-integrated temperature sensor in 180-nm CMOS 8.473
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion 8.361
Ultralow voltage finFET-versus TFET-based STT-MRAM cells for iot applications 875
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2 726
12-bit Delta-Sigma ADC Operating at a Temperature of Up to 250 °C in Standard 0.18 μm SOI CMOS 476
A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design 302
A Low-Voltage, Low-Power Reconfigurable Current-Mode Softmax Circuit for Analog Neural Networks 292
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 201
An Ultralow-Voltage Energy-Efficient Level Shifter 198
Pixel Design Driven Performance Improvement in 4T CMOS Image Sensors: Dark Current Reduction and Full-Well Enhancement 197
Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits 193
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 191
Electromagnetic Design of an Inductive Wireless Power Transfer System for Endoscopic Capsule 185
Understanding the potential and limitations of tunnel FETs for low-voltage analog/mixed-signal circuits 180
Design of Ultra-Low Voltage/Power Circuits and Systems 180
Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs 178
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM 177
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 177
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability 174
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 172
Strained Silicon Complementary TFET SRAM: Experimental Demonstration and Simulations 169
Digital and analog TFET circuits: Design and benchmark 152
Time Domain Analog Neuromorphic Engine Based on High-Density Non-Volatile Memory in Single-Poly CMOS 151
Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C 149
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime 149
Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages 149
Performance analysis of different SRAM cell topologies employing tunnel-FETs 146
Early assessment of tunnel-FET for energy-efficient logic circuits 146
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 145
Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors 141
Load Modulation Feedback in Adaptive Matching Networks for Low-Coupling Wireless Power Transfer Systems 140
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 139
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 138
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 138
Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowires 137
Assessment of Two-Dimensional Materials-based technology for Analog Neural Networks 130
Single Defect Discharge Events in Vertical-Nanowire Tunnel-FETs 125
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation 122
The case for hybrid analog neuromorphic chips based on silicon and 2D materials 117
Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing 116
Single-poly floating-gate memory cell options for analog neural networks 115
A 6.78 MHz Maximum Efficiency Tracking Active Rectifier with Load Modulation Control for Wireless Power Transfer to Implantable Medical Devices 109
Data Loggers for High-Temperature Industrial Environments 106
All-Analog Silicon Integration of Image Sensor and Neural Computing Engine for Image Classification 106
Observation of single phonon-mediated quantum transport in a silicon single-electron CMOS single-atom transistor by RMS noise analysis 106
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High-Temperature 13-Bit Delta-Sigma ADC in Standard SOI CMOS Operating Up to 260°C 87
Temperature-Resilient Analog Neuromorphic Chip in Single-Polysilicon CMOS Technology 86
Mixed device-circuit simulations of 6T/8T SRAM cells employing tunnel-FETs 79
High-Entropy Analog-Based Strong Physical Unclonable Function With Area-to-Entropy-Ratio of 166 F2/bit 75
Fast prototyping of memristors for ReRAMs and neuromorphic computing 73
High-Entropy Analog-Based Strong PUF Reaching 166 F2/Bit Area-to-Entropy-Ratio 69
Power electronics based on wide-bandgap semiconductors: opportunities and challenges 67
In vivo validation of Wireless Power Transfer System for Magnetically Controlled Robotic Capsule Endoscopy 62
A Physical Unclonable Function Based on a Differential Subthreshold PMOS Array with 9.73 × 10−4 Stabilized BER and 1.3 pJ/bit in 65 nm 51
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Totale 26.044
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Categoria #
all - tutte 41.403
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 41.403
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022546 0 22 4 28 107 57 40 14 46 35 70 123
2022/2023552 89 78 56 13 37 75 27 18 124 5 19 11
2023/20245.132 55 45 46 29 105 44 41 13 8 4.634 23 89
2024/20252.063 32 49 41 81 167 147 318 59 191 178 210 590
2025/202615.720 102 3.112 10.387 642 218 173 299 130 170 330 95 62
2026/2027611 344 267 0 0 0 0 0 0 0 0 0 0
Totale 26.044