CINECA IRIS Institutional Research Information System

MARIAN, DAMIANO
 Distribuzione geografica
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Continente #
EU - Europa 2.603
NA - Nord America 1.464
AS - Asia 1.191
SA - Sud America 198
AF - Africa 60
OC - Oceania 2
Totale 5.518
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Nazione #
FI - Finlandia 1.903
US - Stati Uniti d'America 1.430
SG - Singapore 419
IT - Italia 394
CN - Cina 252
HK - Hong Kong 203
BR - Brasile 161
VN - Vietnam 129
DE - Germania 84
SE - Svezia 55
IN - India 52
FR - Francia 35
JP - Giappone 34
SN - Senegal 31
GB - Regno Unito 26
BG - Bulgaria 21
KR - Corea 21
RU - Federazione Russa 18
NL - Olanda 17
CA - Canada 16
PL - Polonia 15
TR - Turchia 11
AR - Argentina 10
IQ - Iraq 10
MX - Messico 7
SA - Arabia Saudita 7
UZ - Uzbekistan 7
AT - Austria 6
BE - Belgio 6
CI - Costa d'Avorio 6
EC - Ecuador 6
ID - Indonesia 6
PK - Pakistan 6
CH - Svizzera 5
PS - Palestinian Territory 5
TT - Trinidad e Tobago 5
VE - Venezuela 5
ZA - Sudafrica 5
BD - Bangladesh 4
PY - Paraguay 4
TW - Taiwan 4
AZ - Azerbaigian 3
DZ - Algeria 3
EG - Egitto 3
ES - Italia 3
KE - Kenya 3
MA - Marocco 3
PE - Perù 3
PH - Filippine 3
UA - Ucraina 3
AU - Australia 2
CL - Cile 2
CO - Colombia 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
GR - Grecia 2
JM - Giamaica 2
JO - Giordania 2
LV - Lettonia 2
MO - Macao, regione amministrativa speciale della Cina 2
MY - Malesia 2
NP - Nepal 2
SY - Repubblica araba siriana 2
TN - Tunisia 2
UY - Uruguay 2
BB - Barbados 1
BO - Bolivia 1
CY - Cipro 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
GY - Guiana 1
IE - Irlanda 1
IL - Israele 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
MU - Mauritius 1
NG - Nigeria 1
NI - Nicaragua 1
RO - Romania 1
RS - Serbia 1
SR - Suriname 1
TJ - Tagikistan 1
TZ - Tanzania 1
Totale 5.518
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Città #
Helsinki 1.863
Singapore 247
Ashburn 228
Hong Kong 201
Santa Clara 191
San Jose 150
Dallas 78
Fairfield 65
Shanghai 60
Pisa 52
Woodbridge 49
Beijing 47
Ho Chi Minh City 43
Los Angeles 41
New York 40
Florence 39
Hanoi 39
Boardman 36
Houston 33
Munich 33
Frankfurt am Main 32
Dakar 31
San Giuliano Terme 31
Milan 30
Seattle 30
Lappeenranta 28
Tokyo 28
Hefei 23
The Dalles 23
Ann Arbor 22
Genoa 21
Sofia 21
Cambridge 18
Princeton 18
Seoul 15
Council Bluffs 14
Lauterbourg 14
Lawrence 14
Ogden 14
Rome 14
Serra 13
Boulder 12
Las Vegas 12
Lucca 12
Baltimore 11
Chicago 11
Columbus 11
Thrissur 11
Warsaw 11
London 9
São Paulo 9
Turku 9
Belo Horizonte 8
Delhi 8
Nanjing 8
Orem 8
San Diego 8
Wilmington 8
Bassano in Teverina 7
Medford 7
Redondo Beach 7
Turin 7
Abidjan 6
Des Moines 6
Fuzhou 6
Nuremberg 6
Ottawa 6
Reggio Emilia 6
Rio de Janeiro 6
San Vincenzo 6
Tashkent 6
Brussels 5
Buffalo 5
Da Nang 5
Düsseldorf 5
Figino 5
Livorno 5
Olivet 5
Paris 5
Prato 5
Yuseong-gu 5
Asunción 4
Castellammare di Stabia 4
Catania 4
Curitiba 4
Ferrara 4
Henrietta 4
Istanbul 4
Naples 4
North Bergen 4
San Francisco 4
Wuppertal 4
Zhengzhou 4
Zurich 4
Amsterdam 3
Atlanta 3
Baghdad 3
Biên Hòa 3
Casablanca 3
Caxias do Sul 3
Totale 4.357
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Nome #
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 2.021
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 171
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 156
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 153
Modeling of Electron Devices Based on 2-D Materials 153
Electrically tunable lateral spin-valve transistor based on bilayer CrI₃ 146
First-principles simulations of FETs based on two-dimensional InSe 143
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 135
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures 133
Electric-field controlled spin transport in bilayer CrI3 132
MoS2/graphene Lateral Heterostructure Field Effect Transistors 129
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials 127
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 122
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices 121
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 118
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons 114
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces 114
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene 111
Simulation of Vertically Stacked 2-D Nanosheet FETs 108
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 105
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 99
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation 88
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure 75
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 64
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 60
Direct dark matter searches with metal halide perovskites 58
Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$ 57
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 53
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 46
Weak Values from Displacement Currents in Multiterminal Electron Devices 45
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices 39
Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices 38
On the noise induced by the measurement of the THz electrical current in quantum devices 36
How does quantum uncertainty emerge from deterministic bohmian mechanics? 35
Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms 34
Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices? 33
Can the wave function in configuration space be replaced by single-particle wave functions in physical space? 33
Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources 32
Time-dependent simulation of particle and displacement currents in THz graphene transistors 31
Roadmap on quantum magnetic materials 30
Weak measurement from the electron displacement current: New path for applications 28
Time-resolved electron transport with quantum trajectories 28
Quantum noise with exchange and tunnelling: predictions for a two-particle scattering experiment with time-dependent oscillatory potentials 28
Van der Waals valleytronics 28
Totale 5.610
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Categoria #
all - tutte 13.793
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.793
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022110 6 2 1 0 24 15 2 0 12 12 4 32
2022/2023247 17 12 13 0 0 11 14 79 66 2 29 4
2023/2024276 12 28 30 13 24 29 35 2 1 32 45 25
2024/20251.167 20 40 71 46 120 138 73 56 122 107 150 224
2025/20263.451 134 121 124 65 182 112 248 107 1.981 202 69 106
2026/20277 7 0 0 0 0 0 0 0 0 0 0 0
Totale 5.610