MARIAN, DAMIANO
 Distribuzione geografica
Continente #
EU - Europa 2.525
NA - Nord America 1.410
AS - Asia 1.187
SA - Sud America 196
AF - Africa 60
OC - Oceania 2
Totale 5.380
Nazione #
FI - Finlandia 1.903
US - Stati Uniti d'America 1.382
SG - Singapore 419
IT - Italia 318
CN - Cina 249
HK - Hong Kong 203
BR - Brasile 159
VN - Vietnam 128
DE - Germania 84
SE - Svezia 55
IN - India 52
FR - Francia 35
JP - Giappone 34
SN - Senegal 31
GB - Regno Unito 26
BG - Bulgaria 21
KR - Corea 21
RU - Federazione Russa 18
NL - Olanda 17
PL - Polonia 15
CA - Canada 13
TR - Turchia 11
AR - Argentina 10
IQ - Iraq 10
MX - Messico 7
SA - Arabia Saudita 7
UZ - Uzbekistan 7
AT - Austria 6
BE - Belgio 6
CI - Costa d'Avorio 6
EC - Ecuador 6
ID - Indonesia 6
PK - Pakistan 6
CH - Svizzera 5
PS - Palestinian Territory 5
VE - Venezuela 5
ZA - Sudafrica 5
BD - Bangladesh 4
PY - Paraguay 4
TT - Trinidad e Tobago 4
TW - Taiwan 4
AZ - Azerbaigian 3
DZ - Algeria 3
EG - Egitto 3
KE - Kenya 3
MA - Marocco 3
PE - Perù 3
PH - Filippine 3
UA - Ucraina 3
AU - Australia 2
CL - Cile 2
CO - Colombia 2
ES - Italia 2
GR - Grecia 2
JO - Giordania 2
LV - Lettonia 2
MO - Macao, regione amministrativa speciale della Cina 2
MY - Malesia 2
NP - Nepal 2
SY - Repubblica araba siriana 2
TN - Tunisia 2
UY - Uruguay 2
BB - Barbados 1
BO - Bolivia 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
ET - Etiopia 1
GY - Guiana 1
IE - Irlanda 1
IL - Israele 1
JM - Giamaica 1
LB - Libano 1
LK - Sri Lanka 1
LT - Lituania 1
MU - Mauritius 1
NG - Nigeria 1
NI - Nicaragua 1
RO - Romania 1
RS - Serbia 1
SR - Suriname 1
TJ - Tagikistan 1
TZ - Tanzania 1
Totale 5.380
Città #
Helsinki 1.863
Singapore 247
Ashburn 221
Hong Kong 201
Santa Clara 191
San Jose 150
Dallas 78
Fairfield 65
Shanghai 60
Pisa 52
Woodbridge 49
Beijing 46
Ho Chi Minh City 42
Los Angeles 41
New York 40
Hanoi 39
Boardman 36
Florence 36
Munich 33
Frankfurt am Main 32
Dakar 31
Houston 31
San Giuliano Terme 31
Seattle 29
Lappeenranta 28
Tokyo 28
Hefei 23
The Dalles 23
Ann Arbor 22
Sofia 21
Genoa 19
Cambridge 18
Princeton 18
Milan 17
Seoul 15
Lauterbourg 14
Lawrence 14
Ogden 14
Serra 13
Boulder 12
Las Vegas 12
Lucca 12
Baltimore 11
Columbus 11
Thrissur 11
Warsaw 11
Chicago 9
Council Bluffs 9
London 9
Turku 9
Belo Horizonte 8
Delhi 8
Nanjing 8
San Diego 8
São Paulo 8
Wilmington 8
Bassano in Teverina 7
Medford 7
Orem 7
Redondo Beach 7
Abidjan 6
Des Moines 6
Fuzhou 6
Nuremberg 6
Ottawa 6
Rio de Janeiro 6
San Vincenzo 6
Tashkent 6
Brussels 5
Buffalo 5
Da Nang 5
Düsseldorf 5
Livorno 5
Olivet 5
Paris 5
Reggio Emilia 5
Rome 5
Yuseong-gu 5
Asunción 4
Castellammare di Stabia 4
Curitiba 4
Henrietta 4
Istanbul 4
North Bergen 4
Prato 4
Wuppertal 4
Zhengzhou 4
Zurich 4
Amsterdam 3
Atlanta 3
Baghdad 3
Biên Hòa 3
Casablanca 3
Caxias do Sul 3
Cornedo Vicentino 3
Dammam 3
Haiphong 3
Jeddah 3
Kanpur 3
Lahore 3
Totale 4.297
Nome #
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 2.021
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 162
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 153
Modeling of Electron Devices Based on 2-D Materials 150
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 146
First-principles simulations of FETs based on two-dimensional InSe 143
Electrically tunable lateral spin-valve transistor based on bilayer CrI₃ 133
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures 133
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 132
Electric-field controlled spin transport in bilayer CrI3 132
MoS2/graphene Lateral Heterostructure Field Effect Transistors 128
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials 127
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 122
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices 114
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons 114
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 113
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces 113
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene 111
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 105
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 97
Simulation of Vertically Stacked 2-D Nanosheet FETs 94
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation 87
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure 73
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 60
Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$ 53
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 50
Direct dark matter searches with metal halide perovskites 48
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 46
Weak Values from Displacement Currents in Multiterminal Electron Devices 45
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices 38
Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices 36
On the noise induced by the measurement of the THz electrical current in quantum devices 36
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 34
Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms 34
Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices? 33
How does quantum uncertainty emerge from deterministic bohmian mechanics? 33
Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources 32
Time-dependent simulation of particle and displacement currents in THz graphene transistors 31
Can the wave function in configuration space be replaced by single-particle wave functions in physical space? 30
Roadmap on quantum magnetic materials 28
Time-resolved electron transport with quantum trajectories 28
Quantum noise with exchange and tunnelling: predictions for a two-particle scattering experiment with time-dependent oscillatory potentials 28
Weak measurement from the electron displacement current: New path for applications 27
Van der Waals valleytronics 19
Totale 5.472
Categoria #
all - tutte 13.170
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.170


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202115 0 0 0 0 0 0 0 0 0 0 2 13
2021/2022110 6 2 1 0 24 15 2 0 12 12 4 32
2022/2023247 17 12 13 0 0 11 14 79 66 2 29 4
2023/2024276 12 28 30 13 24 29 35 2 1 32 45 25
2024/20251.167 20 40 71 46 120 138 73 56 122 107 150 224
2025/20263.320 134 121 124 65 182 112 248 107 1.981 202 44 0
Totale 5.472