CINECA IRIS Institutional Research Information System

MARIAN, DAMIANO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 558
EU - Europa 315
AS - Asia 230
AF - Africa 36
Totale 1.139
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 552
IT - Italia 160
SG - Singapore 126
CN - Cina 76
SE - Svezia 49
FI - Finlandia 30
SN - Senegal 30
DE - Germania 26
BG - Bulgaria 21
IN - India 14
GB - Regno Unito 10
VN - Vietnam 9
CA - Canada 6
CI - Costa d'Avorio 6
PL - Polonia 6
BE - Belgio 5
TR - Turchia 4
NL - Olanda 3
GR - Grecia 2
AT - Austria 1
FR - Francia 1
HK - Hong Kong 1
RU - Federazione Russa 1
Totale 1.139
Salva come PNG Salva come JPEG
Città #
Singapore 73
Fairfield 65
Woodbridge 49
Santa Clara 44
Boardman 36
San Giuliano Terme 31
Dakar 30
New York 29
Ashburn 28
Lappeenranta 28
Seattle 27
Houston 25
Ann Arbor 22
Frankfurt am Main 22
Sofia 21
Beijing 20
Florence 20
Cambridge 18
Princeton 18
Lawrence 14
Ogden 14
Pisa 13
Serra 13
Boulder 12
Genoa 12
Milan 8
Nanjing 8
San Diego 8
Wilmington 8
Bassano in Teverina 7
Medford 7
Abidjan 6
Delhi 6
Des Moines 6
Ottawa 6
San Vincenzo 6
Warsaw 6
Brussels 5
Fuzhou 4
Henrietta 4
Livorno 4
Shanghai 4
Council Bluffs 3
Istanbul 3
Lucknow 3
Olbia 3
Redmond 3
Shenzhen 3
Zhengzhou 3
Camaiore 2
Castellammare di Stabia 2
Champaign 2
Changchun 2
Engelhard 2
Genova 2
Jiaxing 2
Kanpur 2
London 2
Pontedera 2
Pune 2
Quanzhou 2
Vicopisano 2
Windsor 2
Wuppertal 2
Benevento 1
Brentford 1
Chicago 1
Dallas 1
Easton 1
Essen 1
Hangzhou 1
Hong Kong 1
Islington 1
Izmir 1
Kilburn 1
Kunming 1
Lancaster 1
Los Angeles 1
Massy 1
Mumbai 1
Munich 1
Notre Dame 1
Pignone 1
Ponsacco 1
Prineville 1
Redwood City 1
Rome 1
Salt Lake City 1
San Giovanni Valdarno 1
Springfield 1
Wandsworth 1
Totale 865
Salva come PNG Salva come JPEG
Nome #
Modeling of Electron Devices Based on 2-D Materials 100
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 93
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 90
First-principles simulations of FETs based on two-dimensional InSe 89
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures 75
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials 72
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene 68
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons 60
Electric-field controlled spin transport in bilayer CrI3 50
MoS2/graphene Lateral Heterostructure Field Effect Transistors 49
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 47
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces 41
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 34
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices 33
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 32
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation 27
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 25
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 25
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 18
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 14
Electrically tunable lateral spin-valve transistor based on bilayer CrI3 14
Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices? 14
Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices 13
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices 12
On the noise induced by the measurement of the THz electrical current in quantum devices 12
Weak Values from Displacement Currents in Multiterminal Electron Devices 12
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 11
Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms 11
Can the wave function in configuration space be replaced by single-particle wave functions in physical space? 11
Quantum noise with exchange and tunnelling: predictions for a two-particle scattering experiment with time-dependent oscillatory potentials 10
How does quantum uncertainty emerge from deterministic bohmian mechanics? 10
Time-dependent simulation of particle and displacement currents in THz graphene transistors 9
Weak measurement from the electron displacement current: New path for applications 7
Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources 7
Time-resolved electron transport with quantum trajectories 7
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure 6
Totale 1.208
Salva come PNG Salva come JPEG
Categoria #
all - tutte 5.655
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.655
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202090 0 0 0 0 11 11 11 14 10 11 15 7
2020/202195 1 4 0 1 7 0 21 2 33 11 2 13
2021/2022110 6 2 1 0 24 15 2 0 12 12 4 32
2022/2023247 17 12 13 0 0 11 14 79 66 2 29 4
2023/2024276 12 28 30 13 24 29 35 2 1 32 45 25
2024/2025223 20 40 71 46 46 0 0 0 0 0 0 0
Totale 1.208