CINECA IRIS Institutional Research Information System

MARIAN, DAMIANO
 Distribuzione geografica
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Continente #
NA - Nord America 1.109
AS - Asia 932
EU - Europa 534
SA - Sud America 169
AF - Africa 50
OC - Oceania 1
Totale 2.795
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Nazione #
US - Stati Uniti d'America 1.090
SG - Singapore 340
IT - Italia 235
CN - Cina 222
HK - Hong Kong 191
BR - Brasile 140
DE - Germania 75
VN - Vietnam 56
SE - Svezia 50
FI - Finlandia 43
IN - India 43
SN - Senegal 30
FR - Francia 23
BG - Bulgaria 21
GB - Regno Unito 20
KR - Corea 19
RU - Federazione Russa 17
NL - Olanda 13
PL - Polonia 13
JP - Giappone 11
CA - Canada 10
TR - Turchia 8
AR - Argentina 7
SA - Arabia Saudita 7
AT - Austria 6
CI - Costa d'Avorio 6
MX - Messico 6
BE - Belgio 5
EC - Ecuador 5
UZ - Uzbekistan 5
ID - Indonesia 4
PY - Paraguay 4
TW - Taiwan 4
VE - Venezuela 4
ZA - Sudafrica 4
BD - Bangladesh 3
DZ - Algeria 3
IQ - Iraq 3
MA - Marocco 3
PE - Perù 3
PS - Palestinian Territory 3
AZ - Azerbaigian 2
CL - Cile 2
ES - Italia 2
GR - Grecia 2
MO - Macao, regione amministrativa speciale della Cina 2
PK - Pakistan 2
TN - Tunisia 2
UA - Ucraina 2
UY - Uruguay 2
AU - Australia 1
BO - Bolivia 1
CH - Svizzera 1
CR - Costa Rica 1
CY - Cipro 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EE - Estonia 1
JO - Giordania 1
LB - Libano 1
LK - Sri Lanka 1
LV - Lettonia 1
MY - Malesia 1
NG - Nigeria 1
NI - Nicaragua 1
NP - Nepal 1
RO - Romania 1
RS - Serbia 1
SR - Suriname 1
TJ - Tagikistan 1
TT - Trinidad e Tobago 1
TZ - Tanzania 1
Totale 2.795
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Città #
Singapore 205
Ashburn 197
Santa Clara 191
Hong Kong 190
Dallas 75
Fairfield 65
Shanghai 59
Woodbridge 49
Beijing 44
New York 37
Boardman 36
Munich 33
Los Angeles 32
San Giuliano Terme 31
Dakar 30
Frankfurt am Main 29
Houston 28
Lappeenranta 28
Pisa 28
Seattle 28
Hefei 23
Ann Arbor 22
Florence 22
Sofia 21
Ho Chi Minh City 19
Cambridge 18
Princeton 18
Genoa 15
Milan 15
Lawrence 14
Ogden 14
Seoul 14
Hanoi 13
Serra 13
Boulder 12
Thrissur 11
Warsaw 11
The Dalles 10
Tokyo 9
Turku 9
Delhi 8
Nanjing 8
San Diego 8
Wilmington 8
Bassano in Teverina 7
Belo Horizonte 7
Medford 7
Redondo Beach 7
Abidjan 6
Des Moines 6
Fuzhou 6
London 6
Ottawa 6
San Vincenzo 6
São Paulo 6
Brussels 5
Buffalo 5
Düsseldorf 5
Nuremberg 5
Olivet 5
Reggio Emilia 5
Rio de Janeiro 5
Yuseong-gu 5
Asunción 4
Chicago 4
Council Bluffs 4
Curitiba 4
Helsinki 4
Henrietta 4
Istanbul 4
Livorno 4
North Bergen 4
Orem 4
Paris 4
Prato 4
Tashkent 4
Casablanca 3
Caxias do Sul 3
Cornedo Vicentino 3
Dammam 3
Jeddah 3
Lauterbourg 3
Lucknow 3
Mexico City 3
Olbia 3
Osasco 3
Redmond 3
Shenzhen 3
Vienna 3
Zhengzhou 3
Ambāla 2
Ankara 2
Atlanta 2
Baku 2
Benevento 2
Biên Hòa 2
Boston 2
Brooklyn 2
Camaiore 2
Castellammare di Stabia 2
Totale 1.974
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Nome #
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 141
Modeling of Electron Devices Based on 2-D Materials 140
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 140
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 132
First-principles simulations of FETs based on two-dimensional InSe 129
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures 126
Electric-field controlled spin transport in bilayer CrI3 119
First principles investigation of tunnel FETs based on nanoribbons from topological two-dimensional materials 115
MoS2/graphene Lateral Heterostructure Field Effect Transistors 114
Electrically tunable lateral spin-valve transistor based on bilayer CrI₃ 112
Sub-Maxwellian Source Injection and Negative Differential Transconductance in Decorated Graphene Nanoribbons 105
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 103
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 102
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source 102
Tunnel-Field-Effect Spin Filter from Two-Dimensional Antiferromagnetic Stanene 100
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective 91
Physical insights on transistors based on lateral heterostructures of monolayer and multilayer PtSe2 via Ab initio modelling of interfaces 90
Multiscale Simulations of 2-D Material Ink-Based Printed Network Devices 86
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite 80
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors 76
Transport properties in partially overlapping van der Waals junctions through a multiscale investigation 76
Simulation of Vertically Stacked 2-D Nanosheet FETs 63
Strain-induced valley transport in a CrBr3/WSe2/CrBr3 van der Waals heterostructure 55
Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS2 49
Weak Values from Displacement Currents in Multiterminal Electron Devices 37
Quantum dissipation with conditional wave functions: Application to the realistic simulation of nanoscale electron devices 34
Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices 30
Does the Finite Size of Electrons Affect Quantum Noise in Electronic Devices? 30
Noise in Quantum Devices: A Unified Computational Approach for Different Scattering Mechanisms 30
On the noise induced by the measurement of the THz electrical current in quantum devices 28
How does quantum uncertainty emerge from deterministic bohmian mechanics? 28
Quantum noise with exchange and tunnelling: predictions for a two-particle scattering experiment with time-dependent oscillatory potentials 26
Can the wave function in configuration space be replaced by single-particle wave functions in physical space? 25
Weak measurement from the electron displacement current: New path for applications 24
Time-dependent exchange and tunneling: detection at the same place of two electrons emitted simultaneously from different sources 24
Time-resolved electron transport with quantum trajectories 23
Time-dependent simulation of particle and displacement currents in THz graphene transistors 23
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 18
Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$ 13
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 13
Roadmap on quantum magnetic materials 12
Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks 11
Van der Waals valleytronics 8
Totale 2.883
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Categoria #
all - tutte 9.968
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.968
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202182 0 0 0 0 0 0 21 2 33 11 2 13
2021/2022110 6 2 1 0 24 15 2 0 12 12 4 32
2022/2023247 17 12 13 0 0 11 14 79 66 2 29 4
2023/2024276 12 28 30 13 24 29 35 2 1 32 45 25
2024/20251.167 20 40 71 46 120 138 73 56 122 107 150 224
2025/2026731 134 121 124 65 182 105 0 0 0 0 0 0
Totale 2.883