CINECA IRIS Institutional Research Information System

MACUCCI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 16.230
EU - Europa 5.564
AS - Asia 1.974
AF - Africa 224
OC - Oceania 14
SA - Sud America 9
Continente sconosciuto - Info sul continente non disponibili 5
Totale 24.020
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Nazione #
US - Stati Uniti d'America 15.835
IT - Italia 2.064
SE - Svezia 1.263
CN - Cina 1.117
BG - Bulgaria 662
CA - Canada 391
DE - Germania 347
TR - Turchia 323
UA - Ucraina 311
GB - Regno Unito 274
FI - Finlandia 264
VN - Vietnam 226
SG - Singapore 175
CI - Costa d'Avorio 116
CH - Svizzera 112
SN - Senegal 102
RU - Federazione Russa 82
FR - Francia 73
HK - Hong Kong 69
BE - Belgio 36
IN - India 29
NL - Olanda 11
GR - Grecia 10
ES - Italia 9
JP - Giappone 9
PL - Polonia 9
RO - Romania 9
AU - Australia 8
HU - Ungheria 7
KR - Corea 7
AT - Austria 6
BR - Brasile 6
EU - Europa 5
NZ - Nuova Zelanda 5
TW - Taiwan 5
EE - Estonia 4
IE - Irlanda 4
MX - Messico 3
ZA - Sudafrica 3
BD - Bangladesh 2
DK - Danimarca 2
DZ - Algeria 2
IL - Israele 2
MO - Macao, regione amministrativa speciale della Cina 2
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
AM - Armenia 1
AR - Argentina 1
CK - Cook, isole 1
CZ - Repubblica Ceca 1
GL - Groenlandia 1
HR - Croazia 1
ID - Indonesia 1
IS - Islanda 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
MY - Malesia 1
NG - Nigeria 1
NO - Norvegia 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
VE - Venezuela 1
Totale 24.020
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Città #
Woodbridge 2.508
Ann Arbor 2.130
Fairfield 1.943
Houston 1.915
Chandler 1.033
Seattle 799
Ashburn 798
Cambridge 666
Sofia 662
Wilmington 617
Milan 561
Beijing 460
Jacksonville 439
Serra 424
Ottawa 378
New York 353
Izmir 313
Princeton 268
Lawrence 253
Nanjing 205
Medford 188
Dearborn 144
Des Moines 138
Abidjan 116
Bern 110
Dakar 102
Dong Ket 89
Jüchen 86
San Vincenzo 82
San Diego 79
Florence 77
Nanchang 75
Frankfurt am Main 73
Hong Kong 62
Lancaster 55
Boulder 54
Kunming 51
Marseille 50
Shenyang 46
Redwood City 44
Tianjin 41
Changsha 38
Hebei 37
Rome 37
Bremen 36
Lappeenranta 35
Boardman 34
Pisa 34
Brussels 31
Jiaxing 25
Norwalk 25
Ogden 25
Indiana 22
Los Angeles 22
Hefei 19
London 17
Pune 17
Falls Church 16
Auburn Hills 15
Guangzhou 15
Hangzhou 15
La Spezia 15
Washington 15
Viareggio 14
Orange 13
Pistoia 13
Latina 12
Düsseldorf 11
Barga 10
Livorno 10
Verona 10
Grafing 8
Notre Dame 8
Changchun 7
Genova 7
Lanzhou 7
Paris 7
San Francisco 7
Bari 6
Central District 6
Council Bluffs 6
Dallas 6
Jinan 6
Lucca 6
Ningbo 6
Pietrasanta 6
Quarrata 6
Redmond 6
Taizhou 6
Tappahannock 6
Tokyo 6
Torino 6
Walnut 6
Warsaw 6
Budapest 5
Cascina 5
Cisano Bergamasco 5
Shanghai 5
Simi Valley 5
Vienna 5
Totale 19.302
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Nome #
Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities 181
QCA Simulation with the Occupation Number Hamiltonian 173
Numerical Study of Weak Localization Effects in Disordered Cavities 173
MESFET cryogenic front-end for cross-correlation noise measurements 170
Optimized technique for the calculation of carbon nanotube dispersion relationships 167
Failure effect analysis of patch-clamp electronic instrumentation in electrophysiology experiments 165
Theory for a quantum modulated transistor 161
Effect of regular and irregular potential perturbations in mesoscopic cavities 159
MESFET cryogenic front-end for cross-correlation noise measurements 159
High-performance solution of the transport problem in a graphene armchair structure with a generic potential 158
Derailment detection and data collection in freight trains, based on a wireless sensor network 156
Effect of magnetic field on shot noise in diffusive conductors and cascaded barriers 155
Shot noise behavior of mesoscopic cavities in the presence of disorder 155
Performance analysis of correlation techniques for noise measurements 155
Numerical investigation of noise and transport properties of multiple mesoscopic cavities 154
Quantum Cellular Automata: Theory, Experimentation and Prospects 150
Analysis of shot noise suppression in mesoscopic cavities in a magnetic field 148
On the possibility of transistor action based on quantum interference phenomena 146
Quantum Cellular Automata 143
Inkjet printed 2D-crystal based strain gauges on paper 143
Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy 142
High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices 141
null 141
Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities 140
Simplified evaluation of the electrostatic effect of gate voltages on a graphene layer 139
Analysis of electron transfer between parallel quantum wires 137
Modeling the effects of dephasing on mesoscopic noise 137
Effect of displacement current on quantum noise 135
Failure Mode and Effect Analysis of Patch-clamp Laboratory Instrumentation for Electrophysiology Measurements 135
Discussion of Shot Noise Suppression in Cascaded Mesoscopic Cavities 134
Discussion on the possibility of diffusive transport in mesoscopic conductors 133
Analysis of power dissipation in clocked quantum cellular automaton circuits 132
2010 14th International Workshop on Computational Electronics 132
Numerical investigation of shot-noise suppression in diffusive conductors 132
Approximate calculation of the potential profile in a graphene-based device 131
Numerical study of 2-D Quantum Dots 131
Analysis of Electron Transfer in Substituted Biphenylmethane 131
Graphene as a Material for Nanoelectronics 130
Transport analysis of graphene-based devices with width discontinuities 129
1/f and RTS noise in submicron devices: faster is noisier 129
Problems and Perspectives in Quantum-Dot Based Computation 128
Shot noise suppression due to a magnetic field in disordered conductors 128
Effect of localization on the Fano factor of cascaded tunnel barriers 128
Realistic Time Independent Models of a QCA Cell 127
Numerical solution of the Dirac equation for an armchair graphene nanoribbon in the presence of a transversally variable potential 127
SIMULATION OF ELECTRONIC-PROPERTIES AND CAPACITANCE OF QUANTUM DOTS 125
CAPACITIVE NATURE OF ATOMIC-SIZED STRUCTURES 125
Flicker noise in graphene-based Hall sensors 125
Techniques for high-sensitivity measurements of shot noise in nanostructures 124
Shot Noise Suppression in p-n Junctions Due to Carrier Recombination 124
Circular bends in electron waveguides 124
A new measurement method of MOS transistor parameters 124
Differential capacitance between circular stacked quantum dots 123
Effect of imperfections on the tunneling enhancement phenomenon in symmetric double quantum dots 123
Numerical analysis of the resistance behavior of an electrostatically-induced graphene double junction 123
Cryogenic amplification system for ultra-low noise measurements 122
Wireless sensor network for derailment detection in freight trains 122
Analysis of polarization propagation along a semiconductor-based quantum cellular automaton chain 122
Correlation between thermal and generation recombination noise sources: Analytical and Monte Carlo approaches 121
Conditions for the additivity of conductance for parallel mesoscopic constrictions 120
EMI Measurements from ESD between Charged Insulators 120
Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots 120
null 120
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 120
Numerical simulation of scanning gate spectroscopy in bilayer graphene in the Quantum Hall regime 119
Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory 119
Hierarchical simulation of transport in silicon nanowire transistors 119
Electronic energy spectrum and the concept of capacitance in quantum dots 119
null 118
Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation 118
Ionized donor reordering in typical heterostructures 118
Theoretical analysis and numerical simulation of intramolecular barriers in polyphenyl-based molecular devices 117
A QCA cell in silicon-on-insulator technology: theory and experiment 117
Optimization of the thermoelectric properties of nanostructured silicon 117
Corrections to the capacitance between two electrodes due to the presence of quantum confined system 116
Tunneling between multimode stacked quantum wires 116
I/V characteristics of a molecular switch 116
Tunneling enhancement through a barrier surrounded by a mesoscopic cavity 116
Using gate voltages to tune the noise properties of a mesoscopic cavity 116
Modeling the effects of dephasing on mesoscopic noise 116
A novel choice of the graphene unit vectors, useful in zone-folding computations 115
A versatile cryogenic temperature controller 115
Length Dependence of the Fano Factor in Mesoscopic Cavities 115
Model for the 1/f noise behavior of graphene 115
Shell-filling effects in circular quantum dots 114
Signatures of Electron-Electron Interaction in Nanoelectronic Device Shot Noise 114
Shot Noise Addition in Parallel Mesoscopic Constrictions 113
Tight-binding and k.p methods in carbon nanotubes: features, comparison and improvement 113
Operation of Quantum cellular automaton cells with more than two electrons 113
Numerical Investigation of Shot Noise in Nanostructures including Chaotic Cavities and Potential Barriers 113
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics 112
Fabrication techniques for thermoelectric devices based on nanostructured silicon 112
Analysis of transport in a graphene ribbon with an antidot lattice, based on the scattering matrix solution of the Dirac equation 112
Quantum analysis of shot noise suppression in a series of tunnel barriers 111
Simulation of a non-invasive charge detector for quantum cellular automata 111
null 111
Simulation of a complete chain of QCA cells with realistic potentials 110
Indirect measurement of thermal conductivity in silicon nanowires 109
Very sensitive measurement method of electron devices current noise 109
Nonequilibrium velocity autocorrelation function for semiconductors in the presence of trapping phenomena 108
Totale 12.949
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Categoria #
all - tutte 57.271
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 57.271
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191.351 0 0 0 0 0 0 0 0 0 0 733 618
2019/20204.796 615 401 333 326 476 539 549 377 477 283 339 81
2020/20212.459 192 124 138 133 306 138 136 198 395 239 142 318
2021/20222.699 73 181 60 179 522 404 81 120 107 85 173 714
2022/20233.201 403 416 232 280 334 377 17 259 661 15 181 26
2023/20242.067 298 278 365 137 345 403 100 36 49 55 1 0
Totale 24.477