CINECA IRIS Institutional Research Information System

MACUCCI, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 16.564
EU - Europa 5.605
AS - Asia 2.298
AF - Africa 230
OC - Oceania 14
SA - Sud America 9
Continente sconosciuto - Info sul continente non disponibili 5
Totale 24.725
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Nazione #
US - Stati Uniti d'America 16.169
IT - Italia 2.096
SE - Svezia 1.263
CN - Cina 1.177
BG - Bulgaria 662
SG - Singapore 433
CA - Canada 391
DE - Germania 348
TR - Turchia 323
UA - Ucraina 312
GB - Regno Unito 274
FI - Finlandia 270
VN - Vietnam 226
CI - Costa d'Avorio 116
CH - Svizzera 112
SN - Senegal 102
RU - Federazione Russa 82
FR - Francia 73
HK - Hong Kong 69
BE - Belgio 36
IN - India 31
NL - Olanda 11
GR - Grecia 10
ES - Italia 9
JP - Giappone 9
PL - Polonia 9
RO - Romania 9
AU - Australia 8
KR - Corea 8
AT - Austria 7
HU - Ungheria 7
BJ - Benin 6
BR - Brasile 6
EU - Europa 5
NZ - Nuova Zelanda 5
TW - Taiwan 5
EE - Estonia 4
IE - Irlanda 4
ID - Indonesia 3
IL - Israele 3
MX - Messico 3
ZA - Sudafrica 3
BD - Bangladesh 2
DK - Danimarca 2
DZ - Algeria 2
MO - Macao, regione amministrativa speciale della Cina 2
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
AM - Armenia 1
AR - Argentina 1
CK - Cook, isole 1
CZ - Repubblica Ceca 1
GL - Groenlandia 1
HR - Croazia 1
IS - Islanda 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
MY - Malesia 1
NG - Nigeria 1
NO - Norvegia 1
PE - Perù 1
PH - Filippine 1
PT - Portogallo 1
VE - Venezuela 1
Totale 24.725
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Città #
Woodbridge 2.508
Ann Arbor 2.130
Fairfield 1.943
Houston 1.915
Chandler 1.033
Ashburn 807
Seattle 799
Cambridge 666
Sofia 662
Wilmington 617
Milan 564
Beijing 460
Jacksonville 439
Serra 424
Ottawa 378
New York 353
Izmir 313
Boardman 300
Princeton 268
Lawrence 253
Nanjing 205
Medford 188
Singapore 158
Dearborn 144
Des Moines 138
Abidjan 116
Bern 110
Dakar 102
Dong Ket 89
Jüchen 86
Florence 82
San Vincenzo 82
San Diego 79
Nanchang 75
Frankfurt am Main 74
Hong Kong 62
Lancaster 55
Boulder 54
Kunming 51
Marseille 50
Shenyang 46
Redwood City 44
Tianjin 41
Lappeenranta 40
Rome 39
Changsha 38
Ogden 38
Hebei 37
Pisa 37
Bremen 36
Brussels 31
Jiaxing 25
Norwalk 25
Indiana 22
Los Angeles 22
Guangzhou 20
Hefei 20
London 17
Pune 17
Falls Church 16
Auburn Hills 15
Hangzhou 15
La Spezia 15
Washington 15
Dallas 14
Viareggio 14
Livorno 13
Orange 13
Pistoia 13
Latina 12
Düsseldorf 11
Santa Clara 11
Barga 10
Verona 10
Grafing 8
Notre Dame 8
Changchun 7
Genova 7
Kent 7
Lanzhou 7
Paris 7
San Francisco 7
Bari 6
Central District 6
Cotonou 6
Council Bluffs 6
Jinan 6
Lucca 6
Ningbo 6
Phoenix 6
Pietrasanta 6
Quarrata 6
Redmond 6
Shanghai 6
Taizhou 6
Tappahannock 6
Tokyo 6
Torino 6
Vienna 6
Walnut 6
Totale 19.790
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Nome #
Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities 184
QCA Simulation with the Occupation Number Hamiltonian 175
Numerical Study of Weak Localization Effects in Disordered Cavities 175
MESFET cryogenic front-end for cross-correlation noise measurements 171
Optimized technique for the calculation of carbon nanotube dispersion relationships 170
Failure effect analysis of patch-clamp electronic instrumentation in electrophysiology experiments 166
Theory for a quantum modulated transistor 163
Effect of regular and irregular potential perturbations in mesoscopic cavities 162
MESFET cryogenic front-end for cross-correlation noise measurements 161
Derailment detection and data collection in freight trains, based on a wireless sensor network 161
High-performance solution of the transport problem in a graphene armchair structure with a generic potential 159
Performance analysis of correlation techniques for noise measurements 158
Effect of magnetic field on shot noise in diffusive conductors and cascaded barriers 157
Shot noise behavior of mesoscopic cavities in the presence of disorder 157
Numerical investigation of noise and transport properties of multiple mesoscopic cavities 156
Quantum Cellular Automata: Theory, Experimentation and Prospects 152
Analysis of shot noise suppression in mesoscopic cavities in a magnetic field 150
On the possibility of transistor action based on quantum interference phenomena 147
Quantum Cellular Automata 146
Unraveling Quantum Hall Breakdown in Bilayer Graphene with Scanning Gate Microscopy 146
Inkjet printed 2D-crystal based strain gauges on paper 145
High-Resolution Numerical Study of Conductance and Noise Imaging of Mesoscopic Devices 144
Simplified evaluation of the electrostatic effect of gate voltages on a graphene layer 144
Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities 142
null 141
Analysis of electron transfer between parallel quantum wires 139
Modeling the effects of dephasing on mesoscopic noise 138
Effect of displacement current on quantum noise 137
Numerical investigation of shot-noise suppression in diffusive conductors 137
Failure Mode and Effect Analysis of Patch-clamp Laboratory Instrumentation for Electrophysiology Measurements 137
Discussion of Shot Noise Suppression in Cascaded Mesoscopic Cavities 136
2010 14th International Workshop on Computational Electronics 136
Analysis of power dissipation in clocked quantum cellular automaton circuits 134
Discussion on the possibility of diffusive transport in mesoscopic conductors 134
Numerical study of 2-D Quantum Dots 133
Analysis of Electron Transfer in Substituted Biphenylmethane 133
1/f and RTS noise in submicron devices: faster is noisier 133
Effect of localization on the Fano factor of cascaded tunnel barriers 133
Graphene as a Material for Nanoelectronics 133
Transport analysis of graphene-based devices with width discontinuities 132
Approximate calculation of the potential profile in a graphene-based device 132
Numerical solution of the Dirac equation for an armchair graphene nanoribbon in the presence of a transversally variable potential 130
Shot noise suppression due to a magnetic field in disordered conductors 130
Realistic Time Independent Models of a QCA Cell 129
Problems and Perspectives in Quantum-Dot Based Computation 129
SIMULATION OF ELECTRONIC-PROPERTIES AND CAPACITANCE OF QUANTUM DOTS 128
Wireless sensor network for derailment detection in freight trains 128
Shot Noise Suppression in p-n Junctions Due to Carrier Recombination 128
CAPACITIVE NATURE OF ATOMIC-SIZED STRUCTURES 128
Flicker noise in graphene-based Hall sensors 128
Differential capacitance between circular stacked quantum dots 126
Effect of imperfections on the tunneling enhancement phenomenon in symmetric double quantum dots 126
Techniques for high-sensitivity measurements of shot noise in nanostructures 126
Numerical analysis of the resistance behavior of an electrostatically-induced graphene double junction 126
A new measurement method of MOS transistor parameters 126
Optimization of the thermoelectric properties of nanostructured silicon 125
Circular bends in electron waveguides 125
Robustness to gate imperfections of the tunneling enhancement effect in double quantum dots 124
Analysis of polarization propagation along a semiconductor-based quantum cellular automaton chain 124
Cryogenic amplification system for ultra-low noise measurements 123
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 123
EMI Measurements from ESD between Charged Insulators 122
Numerical simulation of scanning gate spectroscopy in bilayer graphene in the Quantum Hall regime 122
Correlation between thermal and generation recombination noise sources: Analytical and Monte Carlo approaches 122
Electronic energy spectrum and the concept of capacitance in quantum dots 122
Conditions for the additivity of conductance for parallel mesoscopic constrictions 121
Armchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation 121
Hierarchical simulation of transport in silicon nanowire transistors 121
Corrections to the capacitance between two electrodes due to the presence of quantum confined system 120
null 120
Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory 120
Ionized donor reordering in typical heterostructures 120
Theoretical analysis and numerical simulation of intramolecular barriers in polyphenyl-based molecular devices 119
Using gate voltages to tune the noise properties of a mesoscopic cavity 119
Tunneling between multimode stacked quantum wires 118
null 118
A novel choice of the graphene unit vectors, useful in zone-folding computations 118
A QCA cell in silicon-on-insulator technology: theory and experiment 118
I/V characteristics of a molecular switch 118
Model for the 1/f noise behavior of graphene 118
Tunneling enhancement through a barrier surrounded by a mesoscopic cavity 118
Modeling the effects of dephasing on mesoscopic noise 118
A versatile cryogenic temperature controller 117
Shell-filling effects in circular quantum dots 116
Signatures of Electron-Electron Interaction in Nanoelectronic Device Shot Noise 116
Length Dependence of the Fano Factor in Mesoscopic Cavities 116
Numerical Investigation of Shot Noise in Nanostructures including Chaotic Cavities and Potential Barriers 116
Shot Noise Addition in Parallel Mesoscopic Constrictions 115
Tight-binding and k.p methods in carbon nanotubes: features, comparison and improvement 115
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics 115
Operation of Quantum cellular automaton cells with more than two electrons 114
Fabrication techniques for thermoelectric devices based on nanostructured silicon 114
Analysis of transport in a graphene ribbon with an antidot lattice, based on the scattering matrix solution of the Dirac equation 114
Quantum analysis of shot noise suppression in a series of tunnel barriers 113
Simulation of a non-invasive charge detector for quantum cellular automata 113
Simulation of a complete chain of QCA cells with realistic potentials 112
Indirect measurement of thermal conductivity in silicon nanowires 112
null 111
Very sensitive measurement method of electron devices current noise 111
Nonequilibrium velocity autocorrelation function for semiconductors in the presence of trapping phenomena 110
Totale 13.184
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Categoria #
all - tutte 64.259
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 64.259
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.780 0 0 333 326 476 539 549 377 477 283 339 81
2020/20212.459 192 124 138 133 306 138 136 198 395 239 142 318
2021/20222.699 73 181 60 179 522 404 81 120 107 85 173 714
2022/20233.201 403 416 232 280 334 377 17 259 661 15 181 26
2023/20242.379 298 278 365 137 345 403 100 36 49 55 88 225
2024/2025402 31 324 47 0 0 0 0 0 0 0 0 0
Totale 25.191