IANNACCONE, GIUSEPPE
 Distribuzione geografica
Continente #
NA - Nord America 29.888
EU - Europa 8.285
AS - Asia 4.540
AF - Africa 319
SA - Sud America 29
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 6
Totale 43.076
Nazione #
US - Stati Uniti d'America 26.911
CA - Canada 2.973
IT - Italia 2.789
CN - Cina 2.243
SE - Svezia 1.531
BG - Bulgaria 1.093
SG - Singapore 973
TR - Turchia 620
DE - Germania 583
UA - Ucraina 557
FI - Finlandia 520
GB - Regno Unito 400
VN - Vietnam 348
CH - Svizzera 288
RU - Federazione Russa 217
SN - Senegal 157
HK - Hong Kong 144
CI - Costa d'Avorio 134
FR - Francia 104
IN - India 81
BE - Belgio 57
KR - Corea 38
PL - Polonia 28
ES - Italia 25
ID - Indonesia 23
NL - Olanda 23
BR - Brasile 22
BJ - Benin 21
IR - Iran 18
GR - Grecia 17
JP - Giappone 15
IE - Irlanda 12
IL - Israele 8
AT - Austria 7
AU - Australia 7
CZ - Repubblica Ceca 6
EU - Europa 6
TW - Taiwan 6
HU - Ungheria 5
PT - Portogallo 5
RO - Romania 5
UZ - Uzbekistan 4
PK - Pakistan 3
SI - Slovenia 3
AE - Emirati Arabi Uniti 2
BD - Bangladesh 2
CL - Cile 2
DK - Danimarca 2
DZ - Algeria 2
GL - Groenlandia 2
LT - Lituania 2
MC - Monaco 2
MX - Messico 2
MY - Malesia 2
NZ - Nuova Zelanda 2
SC - Seychelles 2
AM - Armenia 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CY - Cipro 1
EE - Estonia 1
EG - Egitto 1
FK - Isole Falkland (Malvinas) 1
HR - Croazia 1
IQ - Iraq 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
UY - Uruguay 1
Totale 43.076
Città #
Woodbridge 4.229
Ann Arbor 3.167
Fairfield 3.101
Houston 2.953
Montreal 2.318
Chandler 1.418
Ashburn 1.339
Santa Clara 1.262
Seattle 1.227
Sofia 1.092
Cambridge 1.040
Wilmington 1.017
Jacksonville 777
Milan 757
Beijing 749
Ottawa 640
New York 620
Singapore 572
Princeton 476
Boardman 462
Izmir 449
Serra 446
Lawrence 424
Nanjing 413
Medford 329
Des Moines 260
Bern 248
San Diego 169
Istanbul 160
Dakar 157
Frankfurt am Main 153
Shanghai 147
Dearborn 145
Jüchen 142
Abidjan 134
Nanchang 134
Lappeenranta 131
Florence 128
Dong Ket 119
Hong Kong 110
Boulder 109
San Vincenzo 107
Kunming 89
Lancaster 80
Redwood City 78
Pisa 65
Rome 64
Changsha 61
Shenyang 60
Hebei 59
Brussels 50
Ogden 49
Fuzhou 48
Norwalk 46
Jiaxing 45
Marseille 45
Tianjin 43
Hefei 41
Los Angeles 38
London 36
Hangzhou 33
Orange 32
Pune 27
Quanzhou 27
Auburn Hills 26
Warsaw 26
Jakarta 22
Cotonou 21
San Giuliano Terme 21
Dallas 20
Zhengzhou 20
Guangzhou 19
Helsinki 19
Messina 18
Pietrasanta 17
Council Bluffs 16
Chicago 15
Düsseldorf 15
Lanzhou 15
Genoa 14
Washington 14
Central 13
Chengdu 13
Suwon 13
Central District 12
Changchun 12
Shenzhen 12
Verona 12
Falls Church 11
Indiana 11
Jinan 11
Kent 11
San Jose 11
Wuhan 11
Livorno 10
Phoenix 10
Pistoia 10
Toronto 10
Fasano 9
Redmond 9
Totale 35.475
Nome #
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion 2.466
Numerical Study of Weak Localization Effects in Disordered Cavities 184
Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam 174
Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 164
Performance of arsenene and antimonene double-gate MOSFETs from first principles 163
Electrical properties of graphene-metal contacts 163
A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations 162
Analysis of shot noise suppression in mesoscopic cavities in a magnetic field 162
Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport 158
Modeling the gate current 1/f noise and its application to advanced CMOS devices 156
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 156
Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 154
A software platform for nanoscale device simulation and visualization 152
Graphene as a Material for Nanoelectronics 150
Low-Voltage Low-Power CMOS Oscillator with Low Temperature and Process Sensitivity 149
Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors 148
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors 148
Modeling the effects of dephasing on mesoscopic noise 147
A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator 147
Last-Meter Smart Grid Embedded in an Internet-of-Things Platform 147
Silicon-on-insulator non-volatile memories with second-bit effect 146
Numerical investigation of shot-noise suppression in diffusive conductors 146
Effect of localization on the Fano factor of cascaded tunnel barriers 146
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry 145
Effect of displacement current on quantum noise 144
A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process, 144
Variability-aware design of a bandgap voltage reference with 0.18% standard deviation and 68 nW power consumption 144
High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study 144
Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors 143
Simulation of electromigration noise in polycrystalline metal stripes 143
Variability-aware design of 55 nA current reference with 1.37% standard deviation and 290 nW power consumption 142
Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation 140
CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability 139
Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design Methodology 139
Multiscale Modeling for Graphene-Based Nanoscale Transistors 138
Four-phase power clock generator for adiabatic logic circuits 136
Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents 136
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 136
On the role of interface states in low-voltage leakage currents of metal--oxide--semiconductor structures 135
Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories 135
Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories 135
Problems and Perspectives in Quantum-Dot Based Computation 135
Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders with Subthreshold Logic 134
Characterization and modeling of CMOS-compatible acoustical particle velocity sensors for applications requiring low supply voltages 134
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio 133
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models 133
Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory 132
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 132
A sub-1 v nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity 132
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials 132
Three-dimensional simulation of Single Electron Transistors 131
An Ultralow-Voltage Energy-Efficient Level Shifter 131
On the approach to the stationary-state-scattering limit within Bohmian mechanics 130
An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices 129
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 129
Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure 129
Hierarchical simulation of transport in silicon nanowire transistors 129
On Transport in Vertical Graphene Heterostructures 128
Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations 127
Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport 126
Ultra-low-power temperature compensated voltage reference generator 126
A Sub-1-V, 10 ppm/ oC, Nanopower Voltage Reference Generator 126
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 126
Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors 125
Reduction of the energy consumption in adiabatic gates by optimal transistor sizing 125
Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs 125
Shot Noise in Quasi One-Dimensional FETs 125
Signatures of Electron-Electron Interaction in Nanoelectronic Device Shot Noise 125
A QCA cell in silicon-on-insulator technology: theory and experiment 125
Modeling the effects of dephasing on mesoscopic noise 125
Quantum and semiclassical modeling of threshold voltage dispersion due to random dopants in deep sub-micron MOSFETs 124
Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters 124
null 124
An energy case for hybrid datacenters 123
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 123
Low-Power Wearable ECG Monitoring System for Multiple-Patient Remote Monitoring 123
Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 122
Electrostatic effect of localised charge in dual bit memory cells with discrete traps 122
Design Criteria for the RF section of Long Range passive RFID Systems 122
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 122
Simulation of a quantum-dot flash memory 121
Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime 121
Quantum analysis of shot noise suppression in a series of tunnel barriers 121
Operation of Quantum cellular automaton cells with more than two electrons 121
Electronics based on two-dimensional materials 121
Quantum engineering of transistors based on 2D materials heterostructures 121
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 121
Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors 120
Voltage Regulator for Subthreshold Circuits with Low Sensitivity to Temperature and Process Variations 120
null 120
Simulation of a non-invasive charge detector for quantum cellular automata 120
Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 120
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 120
Electronic properties of functional nanocrystal layers for non-volatile memory applications 119
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 119
Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport 119
Shot Noise in Mesoscopic Devices and Quantum Dot Networks 119
Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations 119
"Atomistic", quantum and ballistic effects in nanoscale MOSFETs 119
Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier 119
Totale 15.774
Categoria #
all - tutte 111.677
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 111.677


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20204.197 0 0 0 0 0 820 874 627 775 446 521 134
2020/20213.584 301 169 234 145 354 139 371 325 607 289 188 462
2021/20224.448 94 282 90 222 944 608 116 170 248 122 368 1.184
2022/20234.535 619 396 265 366 492 594 61 384 952 35 322 49
2023/20246.047 530 440 469 196 520 678 128 76 57 2.449 124 380
2024/20253.110 75 495 221 657 882 780 0 0 0 0 0 0
Totale 43.803