IANNACCONE, GIUSEPPE
 Distribuzione geografica
Continente #
NA - Nord America 27.963
EU - Europa 7.908
AS - Asia 3.189
AF - Africa 297
SA - Sud America 14
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 6
Totale 39.385
Nazione #
US - Stati Uniti d'America 25.006
CA - Canada 2.953
IT - Italia 2.687
CN - Cina 1.905
SE - Svezia 1.531
BG - Bulgaria 1.091
DE - Germania 576
UA - Ucraina 554
TR - Turchia 455
FI - Finlandia 393
GB - Regno Unito 390
VN - Vietnam 348
CH - Svizzera 288
SG - Singapore 157
SN - Senegal 157
HK - Hong Kong 138
CI - Costa d'Avorio 134
RU - Federazione Russa 115
FR - Francia 104
IN - India 72
BE - Belgio 54
KR - Corea 36
PL - Polonia 28
ID - Indonesia 22
ES - Italia 21
GR - Grecia 16
IR - Iran 16
JP - Giappone 15
NL - Olanda 11
IE - Irlanda 10
BR - Brasile 9
IL - Israele 8
AT - Austria 7
AU - Australia 7
EU - Europa 6
TW - Taiwan 6
CZ - Repubblica Ceca 5
HU - Ungheria 5
PT - Portogallo 5
RO - Romania 5
SI - Slovenia 3
AE - Emirati Arabi Uniti 2
BD - Bangladesh 2
DK - Danimarca 2
DZ - Algeria 2
GL - Groenlandia 2
MC - Monaco 2
MX - Messico 2
MY - Malesia 2
SC - Seychelles 2
BN - Brunei Darussalam 1
CL - Cile 1
EE - Estonia 1
EG - Egitto 1
FK - Isole Falkland (Malvinas) 1
HR - Croazia 1
LT - Lituania 1
LV - Lettonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PE - Perù 1
PH - Filippine 1
PY - Paraguay 1
SA - Arabia Saudita 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
UY - Uruguay 1
Totale 39.385
Città #
Woodbridge 4.229
Ann Arbor 3.167
Fairfield 3.101
Houston 2.953
Montreal 2.301
Chandler 1.418
Ashburn 1.298
Seattle 1.227
Sofia 1.091
Cambridge 1.040
Wilmington 1.017
Jacksonville 777
Beijing 749
Milan 745
Ottawa 639
New York 620
Princeton 476
Izmir 449
Serra 446
Lawrence 424
Nanjing 413
Medford 329
Des Moines 260
Bern 248
San Diego 169
Dakar 157
Frankfurt am Main 152
Dearborn 145
Jüchen 142
Abidjan 134
Nanchang 134
Florence 120
Dong Ket 119
Boulder 109
San Vincenzo 107
Hong Kong 104
Kunming 89
Lancaster 80
Redwood City 78
Changsha 61
Rome 61
Shenyang 60
Hebei 59
Brussels 49
Norwalk 46
Jiaxing 45
Marseille 45
Tianjin 43
Hefei 41
Pisa 41
Ogden 34
Hangzhou 33
Los Angeles 33
Orange 32
London 27
Pune 27
Auburn Hills 26
Warsaw 26
Boardman 22
Jakarta 22
San Giuliano Terme 21
Shanghai 21
Zhengzhou 20
Lappeenranta 18
Messina 18
Pietrasanta 17
Council Bluffs 16
Düsseldorf 15
Guangzhou 15
Lanzhou 15
Washington 14
Central 13
Suwon 13
Central District 12
Changchun 12
Chengdu 12
Genoa 12
Verona 12
Falls Church 11
Indiana 11
Jinan 11
Pistoia 10
San Jose 10
Dallas 9
Fasano 9
Redmond 9
Bremen 8
Chicago 8
Livorno 8
San Francisco 8
Toronto 8
Wuhan 8
Zurich 8
Bologna 7
Cascina 7
Cervia 7
Genova 7
Ningbo 7
Tappahannock 7
Tokyo 7
Totale 32.550
Nome #
A 0.6V–1.8V Compact Temperature Sensor with 0.24 °C Resolution, ±1.4 °C Inaccuracy and 1.06 nJ per Conversion 2.403
Numerical Study of Weak Localization Effects in Disordered Cavities 173
Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam 165
Performance of arsenene and antimonene double-gate MOSFETs from first principles 155
Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 154
A 109 nW, 44 ppm/°C CMOS Current Reference with Low Sensitivity to Process Variations 151
Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport 148
Analysis of shot noise suppression in mesoscopic cavities in a magnetic field 148
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 147
Modeling the gate current 1/f noise and its application to advanced CMOS devices 144
Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 143
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors 139
A Sub-1 V, 10 ppm/°C, Nanopower Voltage Reference Generator 138
A software platform for nanoscale device simulation and visualization 138
Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors 138
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry 138
Modeling the effects of dephasing on mesoscopic noise 137
Low-Voltage Low-Power CMOS Oscillator with Low Temperature and Process Sensitivity 137
Silicon-on-insulator non-volatile memories with second-bit effect 136
Effect of displacement current on quantum noise 135
Simulation of electromigration noise in polycrystalline metal stripes 135
Last-Meter Smart Grid Embedded in an Internet-of-Things Platform 135
Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors 134
A 300 nW, 12 ppm deg/C Voltage Reference in a Digital 0.35 micron CMOS Process, 132
Variability-aware design of 55 nA current reference with 1.37% standard deviation and 290 nW power consumption 132
Numerical investigation of shot-noise suppression in diffusive conductors 132
Electrical properties of graphene-metal contacts 132
Multiscale Modeling for Graphene-Based Nanoscale Transistors 131
Theory and Experiment of Suppressed Shot Noise in Stress-Induced Leakage Currents 130
Variability-aware design of a bandgap voltage reference with 0.18% standard deviation and 68 nW power consumption 130
Graphene as a Material for Nanoelectronics 130
High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study 130
CMOS Silicon Physical Unclonable Functions Based on Intrinsic Process Variability 129
Problems and Perspectives in Quantum-Dot Based Computation 128
Effect of localization on the Fano factor of cascaded tunnel barriers 128
On the role of interface states in low-voltage leakage currents of metal--oxide--semiconductor structures 127
Experimental and theoretical analysis of scaling issues in dual-bit discrete trap non-volatile memories 127
Study of Warm-Electron Injection in Double-Gate SONOS by Full-Band Monte Carlo Simulation 127
Temperature Compensation of Silicon Lamé Resonators Using Etch Holes: Theory and Design Methodology 127
Four-phase power clock generator for adiabatic logic circuits 126
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 125
Physical Model for NAND operation in SOI and Body-Tied Nanocrystal FinFLASH memories 124
null 124
Three-dimensional simulation of Single Electron Transistors 123
Ultra-Low-Power Series Voltage Regulator for Passive RFID Transponders with Subthreshold Logic 123
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials 123
Characterization and modeling of CMOS-compatible acoustical particle velocity sensors for applications requiring low supply voltages 122
A sub-1 v nanopower temperature-compensated sub-threshold CMOS voltage reference with 0.065%/V line sensitivity 122
On the approach to the stationary-state-scattering limit within Bohmian mechanics 121
Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models 121
null 120
An Ultralow-Voltage Energy-Efficient Level Shifter 120
Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations 119
On Transport in Vertical Graphene Heterostructures 119
Probing Pauli blocking with shot noise in resonant tunneling diodes: Experiment and theory 119
Proposal of a physics-based compact model for nanoscale MOSFETs including the transition from drift-diffusion to ballistic transport 118
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio 118
An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices 118
Toward understanding of donor-traps-related dispersion phenomena on normally-on AlGaN/GaN HEMT through transient simulations 118
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 118
Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure 118
Hierarchical simulation of transport in silicon nanowire transistors 118
Experimental extraction of barrier lowering and backscattering in saturated short-channel MOSFETs 117
A QCA cell in silicon-on-insulator technology: theory and experiment 117
Modeling the effects of dephasing on mesoscopic noise 116
Ultra-low-power temperature compensated voltage reference generator 115
An energy case for hybrid datacenters 115
Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors 114
Reduction of the energy consumption in adiabatic gates by optimal transistor sizing 114
Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters 114
Signatures of Electron-Electron Interaction in Nanoelectronic Device Shot Noise 114
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 114
Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 113
A Sub-1-V, 10 ppm/ oC, Nanopower Voltage Reference Generator 113
Operation of Quantum cellular automaton cells with more than two electrons 113
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 113
Quantum and semiclassical modeling of threshold voltage dispersion due to random dopants in deep sub-micron MOSFETs 112
Shot Noise in Quasi One-Dimensional FETs 112
Simulation of a quantum-dot flash memory 111
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 111
Design Criteria for the RF section of Long Range passive RFID Systems 111
Quantum analysis of shot noise suppression in a series of tunnel barriers 111
Simulation of a non-invasive charge detector for quantum cellular automata 111
Design of a 75-nW, 0.5-V subthreshold complementary metal-oxide-semiconductor operational amplifier 111
null 111
Low-Power Wearable ECG Monitoring System for Multiple-Patient Remote Monitoring 111
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 111
Electronic properties of functional nanocrystal layers for non-volatile memory applications 110
Electrostatic effect of localised charge in dual bit memory cells with discrete traps 110
Analytical and Numerical Investigation of Noise in Nanoscale Ballistic Field Effect Transistors 110
Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime 110
Voltage Regulator for Subthreshold Circuits with Low Sensitivity to Temperature and Process Variations 110
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 110
Physics-based compact model of nanoscale MOSFETs - Part I: Transition from drift-diffusion to ballistic transport 109
Detailed modeling of sub-100-nm MOSFETs based on Schrodinger DD per subband and experiments and evaluation of the performance gap to ballistic transport 109
Evaluation of program, erase and retention times of Flash memories with very thin gate dielectric 108
Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations 108
Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 108
Statistical model of dephasing in mesoscopic devices introduced in the scattering matrix formalism 107
Electric Field Control of Spin Rotation in Bilayer Graphene 107
Totale 14.661
Categoria #
all - tutte 90.979
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 90.979


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20193.203 0 0 0 0 0 0 0 0 0 1.017 1.186 1.000
2019/20207.496 1.021 671 328 507 772 820 874 627 775 446 521 134
2020/20213.584 301 169 234 145 354 139 371 325 607 289 188 462
2021/20224.448 94 282 90 222 944 608 116 170 248 122 368 1.184
2022/20234.535 619 396 265 366 492 594 61 384 952 35 322 49
2023/20245.438 530 440 469 196 520 678 128 76 57 2.344 0 0
Totale 40.084