CINECA IRIS Institutional Research Information System

FIORI, GIANLUCA
 Distribuzione geografica
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Continente #
NA - Nord America 18.937
AS - Asia 7.773
EU - Europa 6.748
SA - Sud America 1.240
AF - Africa 310
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
Totale 35.017
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Nazione #
US - Stati Uniti d'America 18.523
SG - Singapore 2.409
FI - Finlandia 2.224
CN - Cina 2.085
IT - Italia 1.651
HK - Hong Kong 1.431
BR - Brasile 1.039
VN - Vietnam 675
SE - Svezia 600
BG - Bulgaria 500
DE - Germania 477
TR - Turchia 359
CA - Canada 334
FR - Francia 305
RU - Federazione Russa 268
GB - Regno Unito 262
IN - India 187
JP - Giappone 161
UA - Ucraina 135
SN - Senegal 131
KR - Corea 120
AR - Argentina 67
CH - Svizzera 65
CI - Costa d'Avorio 57
ES - Italia 53
BD - Bangladesh 47
IQ - Iraq 45
EC - Ecuador 44
MX - Messico 37
NL - Olanda 37
ID - Indonesia 36
BE - Belgio 33
PL - Polonia 32
ZA - Sudafrica 30
UZ - Uzbekistan 26
PK - Pakistan 25
AT - Austria 23
VE - Venezuela 23
SA - Arabia Saudita 21
TW - Taiwan 20
IR - Iran 18
MA - Marocco 18
DZ - Algeria 15
EG - Egitto 15
CO - Colombia 14
CL - Cile 12
GR - Grecia 12
KE - Kenya 12
PH - Filippine 12
PY - Paraguay 12
JO - Giordania 11
PT - Portogallo 11
TN - Tunisia 11
AZ - Azerbaigian 10
CZ - Repubblica Ceca 10
PE - Perù 10
UY - Uruguay 10
BO - Bolivia 9
IL - Israele 9
LB - Libano 9
TT - Trinidad e Tobago 9
AL - Albania 8
AE - Emirati Arabi Uniti 7
MY - Malesia 7
BJ - Benin 6
CR - Costa Rica 6
EE - Estonia 6
NP - Nepal 6
AU - Australia 5
JM - Giamaica 5
PS - Palestinian Territory 5
AM - Armenia 4
ET - Etiopia 4
HN - Honduras 4
IE - Irlanda 4
LT - Lituania 4
LV - Lettonia 4
NG - Nigeria 4
OM - Oman 4
RO - Romania 4
SY - Repubblica araba siriana 4
HU - Ungheria 3
LA - Repubblica Popolare Democratica del Laos 3
LK - Sri Lanka 3
NI - Nicaragua 3
SI - Slovenia 3
SV - El Salvador 3
AO - Angola 2
BB - Barbados 2
CG - Congo 2
CY - Cipro 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
GL - Groenlandia 2
GT - Guatemala 2
HR - Croazia 2
KG - Kirghizistan 2
LU - Lussemburgo 2
MD - Moldavia 2
MM - Myanmar 2
Totale 34.991
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Città #
Dallas 2.968
Helsinki 1.897
Woodbridge 1.808
Ashburn 1.609
Ann Arbor 1.531
Fairfield 1.488
Hong Kong 1.394
Singapore 1.291
Houston 1.261
San Jose 795
Santa Clara 770
Chandler 655
Shanghai 610
Seattle 568
Sofia 500
Cambridge 497
Beijing 461
Wilmington 460
New York 364
Ottawa 266
Boardman 252
Princeton 246
Milan 242
Serra 236
Izmir 214
Lawrence 205
Nanjing 189
Lauterbourg 186
Ho Chi Minh City 181
Frankfurt am Main 174
Medford 170
Jacksonville 160
Los Angeles 148
Des Moines 146
Tokyo 142
Dakar 131
Lappeenranta 129
Florence 126
Pisa 126
Council Bluffs 124
Hanoi 119
Istanbul 113
Munich 106
Hefei 103
Redondo Beach 96
San Diego 80
Seoul 79
Boulder 76
San Vincenzo 73
Buffalo 71
São Paulo 71
Dong Ket 61
Abidjan 57
Redwood City 57
Nanchang 52
Lancaster 47
Rome 45
Dearborn 42
Ogden 38
Rio de Janeiro 38
Las Vegas 37
Bern 35
London 33
Marseille 33
Turku 32
Kunming 31
The Dalles 31
Fuzhou 28
Belo Horizonte 27
Changsha 27
Chicago 27
Lucca 27
San Giuliano Terme 27
Norwalk 26
Warsaw 26
Brussels 25
Hebei 25
Orem 25
Chennai 24
Jüchen 24
Shenyang 24
Tashkent 24
Genoa 23
Düsseldorf 21
Nuremberg 21
Baghdad 20
Da Nang 20
Haiphong 20
Jiaxing 20
Zurich 20
Phoenix 19
Messina 18
Tianjin 18
Brasília 17
Toronto 17
Guangzhou 16
Montreal 16
Quito 16
Biên Hòa 15
Columbus 15
Totale 27.094
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Nome #
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 2.021
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD 768
Wirelessly powered large-area electronics for the Internet of Things 701
1/f Noise Characterization of Bilayer MoS2 Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics 514
Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper 451
Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization 445
Analogue two-dimensional semiconductor electronics 420
A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design 301
Electrical properties of graphene-metal contacts 272
Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities 267
MESFET cryogenic front-end for cross-correlation noise measurements 248
Performance analysis of correlation techniques for noise measurements 240
Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam 239
MESFET cryogenic front-end for cross-correlation noise measurements 235
Improvement of the accuracy of noise measurements by the two-amplifier correlation method 220
Performance of arsenene and antimonene double-gate MOSFETs from first principles 218
Inkjet printed 2D-crystal based strain gauges on paper 215
Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 203
Graphene as a Material for Nanoelectronics 200
Model for the 1/f noise behavior of graphene 197
High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study 195
Dependence of DC characteristics of CNT MOSFETs on bandstructure models 194
Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 193
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 192
Shot Noise Suppression in p-n Junctions Due to Carrier Recombination 190
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry 186
Current saturation and voltage gain in bilayer graphene field effect transistors 183
All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits 183
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors 182
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials 182
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 175
Quantum engineering of transistors based on 2D materials heterostructures 173
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 171
Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 171
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 171
Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors 171
Electronics based on two-dimensional materials 171
On Transport in Vertical Graphene Heterostructures 171
Three-dimensional simulation of Single Electron Transistors 170
Multiscale Modeling for Graphene-Based Nanoscale Transistors 169
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride 167
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics 165
Hierarchical simulation of transport in silicon nanowire transistors 165
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio 164
Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations 163
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation 163
High‐Precision Materials Printer for Fast Prototyping of Electronic Devices Based on 2D Materials 162
An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices 162
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 161
Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations 159
Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering 158
Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 157
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 156
"Atomistic", quantum and ballistic effects in nanoscale MOSFETs 156
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 156
Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs 155
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 154
Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN 153
Shot Noise in Quasi One-Dimensional FETs 153
Modeling of Electron Devices Based on 2-D Materials 153
Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transisitor 152
Flexible One-Dimensional Metal–Insulator–Graphene Diode 152
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 151
Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction 150
Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations 148
Stacking and interlayer electron transport in MoS2 148
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling 147
Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors 147
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 147
Electrically tunable lateral spin-valve transistor based on bilayer CrI₃ 146
Semianalytical Model of Bilayer-Graphene Field-Effect Transistor 146
Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors 145
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 145
Modeling C-based Nanotransistors 144
Corrections to “A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry 144
Ultralow-Voltage Bilayer Graphene Tunnel FET 144
Analysis of shot noise suppression in disordered quantum wires 143
First-principles simulations of FETs based on two-dimensional InSe 143
Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width 142
The prospects of two-dimensional materials for ultimately scaled CMOS 142
Insights on radio frequency bilayer graphene FETs 141
Reconfigurable Diodes Based on Vertical WSe2Transistors with van der Waals Bonded Contacts 141
Charge injection in normally-off p-GaN gate AlGaN/GaN-on-Si HFETs 141
Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons 139
Quantum transport modeling of defected graphene nanoribbons 138
Two dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications 138
Simulation of hydrogenated graphene field-effect transistors through a multiscale approach 138
Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors 138
Full band assessment of phonon-limited mobility in Graphene NanoRibbons 137
Tecniques and method for the simulation of nanoscale ballistic MOSFET 136
"Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET 136
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 136
Bilayer Graphene Transistors for Analog Electronics 136
Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks 136
Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors 135
Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies 134
Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs 134
High performance metal-insulator-graphene diodes for radio frequency power detection application 134
Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors 133
Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport 133
Totale 20.810
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Categoria #
all - tutte 92.966
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 92.966
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.114 54 158 63 86 404 286 54 89 121 68 124 607
2022/20232.256 280 172 123 173 189 255 34 204 562 10 218 36
2023/20241.844 158 157 211 84 233 365 109 41 28 127 141 190
2024/20256.566 57 261 170 388 531 619 728 363 743 865 606 1.235
2025/202611.109 458 1.325 2.646 587 667 740 1.033 324 2.229 666 278 156
2026/202745 45 0 0 0 0 0 0 0 0 0 0 0
Totale 35.640