CINECA IRIS Institutional Research Information System

FIORI, GIANLUCA
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 17.569
AS - Asia 6.744
EU - Europa 4.395
SA - Sud America 1.150
AF - Africa 274
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 2
Totale 30.138
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 17.196
SG - Singapore 2.046
CN - Cina 1.984
IT - Italia 1.495
HK - Hong Kong 1.403
BR - Brasile 984
SE - Svezia 590
BG - Bulgaria 499
DE - Germania 449
VN - Vietnam 412
FI - Finlandia 345
TR - Turchia 341
CA - Canada 311
RU - Federazione Russa 265
GB - Regno Unito 229
IN - India 150
UA - Ucraina 132
SN - Senegal 130
FR - Francia 117
KR - Corea 115
CI - Costa d'Avorio 56
AR - Argentina 54
CH - Svizzera 52
JP - Giappone 43
ES - Italia 40
EC - Ecuador 37
BD - Bangladesh 33
BE - Belgio 33
MX - Messico 33
PL - Polonia 30
ID - Indonesia 28
NL - Olanda 28
IQ - Iraq 27
ZA - Sudafrica 26
AT - Austria 23
UZ - Uzbekistan 20
VE - Venezuela 20
IR - Iran 18
TW - Taiwan 18
SA - Arabia Saudita 16
MA - Marocco 14
GR - Grecia 12
PK - Pakistan 12
PY - Paraguay 12
CO - Colombia 11
DZ - Algeria 9
UY - Uruguay 9
AZ - Azerbaigian 8
CL - Cile 8
CZ - Repubblica Ceca 8
EG - Egitto 8
JO - Giordania 8
PE - Perù 8
PT - Portogallo 8
AE - Emirati Arabi Uniti 7
BO - Bolivia 7
LB - Libano 7
TN - Tunisia 7
AL - Albania 6
BJ - Benin 6
IL - Israele 6
KE - Kenya 6
PH - Filippine 6
EE - Estonia 5
AM - Armenia 4
AU - Australia 4
MY - Malesia 4
NG - Nigeria 4
PS - Palestinian Territory 4
RO - Romania 4
TT - Trinidad e Tobago 4
CR - Costa Rica 3
ET - Etiopia 3
HN - Honduras 3
IE - Irlanda 3
JM - Giamaica 3
LA - Repubblica Popolare Democratica del Laos 3
LV - Lettonia 3
NP - Nepal 3
SI - Slovenia 3
AO - Angola 2
BB - Barbados 2
CY - Cipro 2
DK - Danimarca 2
DO - Repubblica Dominicana 2
GL - Groenlandia 2
HU - Ungheria 2
KG - Kirghizistan 2
LK - Sri Lanka 2
LT - Lituania 2
LU - Lussemburgo 2
MD - Moldavia 2
MO - Macao, regione amministrativa speciale della Cina 2
NI - Nicaragua 2
OM - Oman 2
PA - Panama 2
PR - Porto Rico 2
SV - El Salvador 2
SY - Repubblica araba siriana 2
BA - Bosnia-Erzegovina 1
Totale 30.120
Salva come PNG Salva come JPEG
Città #
Dallas 2.959
Woodbridge 1.807
Ann Arbor 1.531
Ashburn 1.497
Fairfield 1.488
Hong Kong 1.372
Houston 1.254
Singapore 1.121
Santa Clara 757
Chandler 655
Shanghai 608
Seattle 566
Sofia 499
Cambridge 497
Wilmington 460
Beijing 454
New York 349
Ottawa 266
Boardman 252
Princeton 246
Serra 236
Milan 225
Izmir 214
Lawrence 205
Nanjing 188
Medford 170
Jacksonville 159
Frankfurt am Main 158
Des Moines 145
Los Angeles 140
Dakar 130
Lappeenranta 128
Florence 124
Istanbul 109
Munich 106
Hefei 103
Redondo Beach 96
Pisa 95
Ho Chi Minh City 88
San Diego 80
Seoul 78
Boulder 76
Council Bluffs 76
San Vincenzo 73
Buffalo 70
São Paulo 66
Dong Ket 61
Redwood City 57
Abidjan 56
Nanchang 52
Hanoi 49
Lancaster 46
Dearborn 42
San Jose 39
Ogden 38
Rome 37
Rio de Janeiro 36
Bern 35
Marseille 33
Turku 32
Kunming 31
London 30
Fuzhou 28
Tokyo 28
San Giuliano Terme 27
Norwalk 26
Warsaw 26
Brussels 25
Changsha 25
Hebei 25
Belo Horizonte 24
Jüchen 24
Shenyang 24
Düsseldorf 21
Genoa 20
Helsinki 20
Jiaxing 20
Chicago 19
Lucca 19
Tashkent 18
Tianjin 18
Nuremberg 17
Phoenix 17
The Dalles 17
Brasília 16
Guangzhou 16
Messina 16
Chennai 15
Curitiba 15
Delhi 14
Vienna 14
Central 13
Livorno 13
North Bergen 13
Porto Alegre 13
Suwon 13
Toronto 13
Auburn Hills 12
Guayaquil 12
Hangzhou 12
Totale 23.358
Salva come PNG Salva come JPEG
Nome #
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD 728
Wirelessly powered large-area electronics for the Internet of Things 686
1/f Noise Characterization of Bilayer MoS2 Field-Effect Transistors on Paper with Inkjet-Printed Contacts and hBN Dielectrics 488
Inkjet-printed low-dimensional materials-based complementary electronic circuits on paper 431
Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization 414
Analogue two-dimensional semiconductor electronics 380
A 2-D-Material FET Verilog-A Model for Analog Neuromorphic Circuit Design 282
Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities 250
Electrical properties of graphene-metal contacts 248
MESFET cryogenic front-end for cross-correlation noise measurements 237
Performance analysis of correlation techniques for noise measurements 228
MESFET cryogenic front-end for cross-correlation noise measurements 223
Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam 220
Performance of arsenene and antimonene double-gate MOSFETs from first principles 209
Inkjet printed 2D-crystal based strain gauges on paper 206
Improvement of the accuracy of noise measurements by the two-amplifier correlation method 198
Graphene as a Material for Nanoelectronics 193
Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 191
High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study 190
Dependence of DC characteristics of CNT MOSFETs on bandstructure models 187
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 185
Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 183
Model for the 1/f noise behavior of graphene 183
Shot Noise Suppression in p-n Junctions Due to Carrier Recombination 182
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry 180
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials 176
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors 174
All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits 171
Current saturation and voltage gain in bilayer graphene field effect transistors 168
Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors 165
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 165
Quantum engineering of transistors based on 2D materials heterostructures 163
Multiscale Modeling for Graphene-Based Nanoscale Transistors 163
Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 160
Three-dimensional simulation of Single Electron Transistors 159
Electronics based on two-dimensional materials 158
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 157
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride 156
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio 155
On Transport in Vertical Graphene Heterostructures 155
An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices 155
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation 155
Hierarchical simulation of transport in silicon nanowire transistors 155
Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations 154
Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations 154
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics 153
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 153
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 149
"Atomistic", quantum and ballistic effects in nanoscale MOSFETs 148
Shot Noise in Quasi One-Dimensional FETs 147
Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs 146
Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 145
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 145
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 145
Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transisitor 141
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 141
Ultralow Specific Contact Resistivity in Metal–Graphene Junctions via Contact Engineering 140
Modeling of Electron Devices Based on 2-D Materials 140
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 140
Corrections to “A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry 139
Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations 139
Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction 139
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling 139
Flexible One-Dimensional Metal–Insulator–Graphene Diode 139
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 138
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 138
Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors 137
Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors 137
Ultralow-Voltage Bilayer Graphene Tunnel FET 136
Modeling C-based Nanotransistors 135
Semianalytical Model of Bilayer-Graphene Field-Effect Transistor 135
Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width 135
Analysis of shot noise suppression in disordered quantum wires 134
Reconfigurable Diodes Based on Vertical WSe2Transistors with van der Waals Bonded Contacts 133
Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons 132
Insights on radio frequency bilayer graphene FETs 132
The prospects of two-dimensional materials for ultimately scaled CMOS 132
Rhombohedral-stacked bilayer transition metal dichalcogenides for high-performance atomically thin CMOS devices 131
Two dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications 131
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 131
Bilayer Graphene Transistors for Analog Electronics 131
Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks 131
Tecniques and method for the simulation of nanoscale ballistic MOSFET 130
"Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET 130
Simulation of hydrogenated graphene field-effect transistors through a multiscale approach 130
Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies 130
Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors 129
First-principles simulations of FETs based on two-dimensional InSe 129
Stacking and interlayer electron transport in MoS2 129
Quantum transport modeling of defected graphene nanoribbons 128
Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors 128
Charge injection in normally-off p-GaN gate AlGaN/GaN-on-Si HFETs 128
Full band assessment of phonon-limited mobility in Graphene NanoRibbons 127
Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs 126
Velocity saturation in few-layer MoS2 transistor 126
Two Dimensional Transistors Based on MoS2 Lateral Heterostructures 126
Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors 124
null 124
High performance metal-insulator-graphene diodes for radio frequency power detection application 124
Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions 124
Totale 17.749
Salva come PNG Salva come JPEG
Categoria #
all - tutte 81.644
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 81.644
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.231 0 0 0 0 0 57 207 127 345 154 90 251
2021/20222.114 54 158 63 86 404 286 54 89 121 68 124 607
2022/20232.256 280 172 123 173 189 255 34 204 562 10 218 36
2023/20241.844 158 157 211 84 233 365 109 41 28 127 141 190
2024/20256.566 57 261 170 388 531 619 728 363 743 865 606 1.235
2025/20266.270 458 1.325 2.646 587 667 587 0 0 0 0 0 0
Totale 30.756