CINECA IRIS Institutional Research Information System

FIORI, GIANLUCA
 Distribuzione geografica
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Continente #
NA - Nord America 12.151
EU - Europa 3.558
AS - Asia 2.047
AF - Africa 193
OC - Oceania 4
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 17.958
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Nazione #
US - Stati Uniti d'America 11.864
IT - Italia 1.313
CN - Cina 925
SE - Svezia 584
SG - Singapore 502
BG - Bulgaria 499
FI - Finlandia 289
CA - Canada 284
DE - Germania 284
TR - Turchia 216
GB - Regno Unito 183
VN - Vietnam 183
SN - Senegal 129
UA - Ucraina 114
HK - Hong Kong 75
RU - Federazione Russa 72
IN - India 65
FR - Francia 59
CI - Costa d'Avorio 56
CH - Svizzera 50
KR - Corea 31
BE - Belgio 29
ES - Italia 29
IR - Iran 14
JP - Giappone 13
PL - Polonia 13
GR - Grecia 12
ID - Indonesia 7
BJ - Benin 6
NL - Olanda 5
TW - Taiwan 5
AT - Austria 4
AU - Australia 4
CZ - Repubblica Ceca 4
PT - Portogallo 4
IL - Israele 3
SI - Slovenia 3
AE - Emirati Arabi Uniti 2
BR - Brasile 2
GL - Groenlandia 2
MY - Malesia 2
NG - Nigeria 2
RO - Romania 2
UZ - Uzbekistan 2
CL - Cile 1
DK - Danimarca 1
EE - Estonia 1
EU - Europa 1
HR - Croazia 1
HU - Ungheria 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
MC - Monaco 1
MX - Messico 1
PE - Perù 1
PH - Filippine 1
Totale 17.958
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Città #
Woodbridge 1.807
Ann Arbor 1.531
Fairfield 1.488
Houston 1.248
Chandler 655
Ashburn 649
Seattle 565
Sofia 499
Cambridge 497
Wilmington 460
Beijing 368
New York 324
Ottawa 265
Singapore 247
Princeton 246
Boardman 235
Serra 234
Izmir 212
Milan 212
Lawrence 205
Nanjing 188
Medford 170
Jacksonville 159
Des Moines 143
Frankfurt am Main 132
Dakar 129
Lappeenranta 128
Florence 122
San Diego 80
Boulder 76
San Vincenzo 73
Dong Ket 61
Pisa 60
Redwood City 57
Abidjan 56
Nanchang 52
Hong Kong 49
Lancaster 46
Dearborn 42
Ogden 38
Bern 35
Marseille 33
Kunming 31
Norwalk 26
Brussels 25
Hebei 25
Jüchen 24
Changsha 23
San Giuliano Terme 23
Shenyang 23
Rome 21
Hefei 20
Jiaxing 20
Los Angeles 20
Santa Clara 19
Tianjin 18
Messina 16
Dallas 15
London 15
Genoa 14
Shanghai 14
Central 13
Suwon 13
Warsaw 13
Auburn Hills 12
Council Bluffs 12
Pune 12
Jinan 11
Kanpur 10
La Spezia 10
Pistoia 10
Zhengzhou 10
Chengdu 9
Falls Church 9
Fasano 9
Guangzhou 9
Hangzhou 9
Livorno 9
Orange 9
Toronto 9
Central District 8
Kent 8
Phoenix 8
Zurich 8
Barcelona 7
Berlin 7
Jakarta 7
Redmond 7
Barga 6
Bassano in Teverina 6
Berkeley 6
Cotonou 6
Delhi 6
Düsseldorf 6
Lucca 6
Ningbo 6
Paris 6
Warangal 6
Washington 6
Chicago 5
Totale 14.597
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Nome #
Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities 185
MESFET cryogenic front-end for cross-correlation noise measurements 173
Gate-tunable atomically thin lateral MoS2 Schottky junction patterned by electron beam 167
MESFET cryogenic front-end for cross-correlation noise measurements 162
Performance analysis of correlation techniques for noise measurements 159
Performance comparison of graphene nanoribbon schottky barrier and MOS FETs 157
Performance of arsenene and antimonene double-gate MOSFETs from first principles 157
Dependence of DC characteristics of CNT MOSFETs on bandstructure models 153
Inkjet printed 2D-crystal based strain gauges on paper 146
Three-dimensional simulations of quantum confinement and random dopants effects in nanoscale nMOSFETs 145
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors 142
Electrical properties of graphene-metal contacts 142
A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry 140
Shot Noise Analysis in Quasi One-Dimensional Field Effect Transistors 137
High-Performance 2D p-Type Transistors Based on GaSe Layers: An Ab Initio Study 137
Graphene as a Material for Nanoelectronics 136
Multiscale Modeling for Graphene-Based Nanoscale Transistors 132
Shot Noise Suppression in p-n Junctions Due to Carrier Recombination 129
Three-dimensional simulation of Single Electron Transistors 126
Current saturation and voltage gain in bilayer graphene field effect transistors 125
Insights on the physics and application of off-plane quantum transport through graphene and 2D materials 125
null 124
Water-based and biocompatible 2D crystal inks for all-inkjet-printed heterostructures 124
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory 124
Nanodevices in Flatland: Two-dimensional graphene-based transistors with high Ion/Ioff ratio 122
An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices 122
Hierarchical simulation of transport in silicon nanowire transistors 122
Physical Insights on Graphene Nanoribbon Mobility Through Atomistic Simulations 121
On Transport in Vertical Graphene Heterostructures 121
Model for the 1/f noise behavior of graphene 118
Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride 117
Techniques and Methods for the Simulation of nanoscale ballistic MOSFETs 116
Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics 115
Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices 115
Shot Noise in Quasi One-Dimensional FETs 114
Quantum engineering of transistors based on 2D materials heterostructures 114
A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors 114
Code for the 3D simulation of nanoscale semiconductor devices, including drift-diffusion and ballistic transport in 1D and 2D subbands, and 3D tunneling 113
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 113
Enhanced shot noise in carbon nanotube FETs due to electron-hole interaction 112
"Atomistic", quantum and ballistic effects in nanoscale MOSFETs 111
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 111
null 111
Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations 110
Drift velocity peak and negative differential mobility in high field transport in graphene nanoribbons explained by numerical simulations 110
Electronics based on two-dimensional materials 110
Semianalytical Model of Bilayer-Graphene Field-Effect Transistor 109
Improvement of the accuracy of noise measurements by the two-amplifier correlation method 109
Three-dimensional simulation of the dependence of the programming window of SOI nanocrystal memories on the channel width 107
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling 107
Simulation of hydrogenated graphene field-effect transistors through a multiscale approach 106
Statistical Theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction 106
Modeling C-based Nanotransistors 105
Semi-analytical model for Schottky-barrier carbon nanotube and graphene nanoribbon transistors 105
Ultralow-Voltage Bilayer Graphene Tunnel FET 105
All-2D Material Inkjet-Printed Capacitors: Toward Fully Printed Integrated Circuits 105
Effects due to backscattering and pseudogap features in graphene nanoribbons with single vacancies 104
Insights on radio frequency bilayer graphene FETs 104
Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling 104
null 103
Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate Stacks 103
Geometrical Effects on Valley-Orbital Filling Patterns in Silicon Quantum Dots for Robust Qubit Implementation 102
Bilayer Graphene Transistors for Analog Electronics 102
Corrections to “A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry 101
Flexible One-Dimensional Metal–Insulator–Graphene Diode 101
Numerical Analysis of Transport Properties of Boron-Doped Graphene FETs 100
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 100
Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors 99
Analysis of shot noise suppression in disordered quantum wires 99
null 99
Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transisitor 98
Two dimensional Graphene/h-BCN based devices with large Ion/Ioff ratio for digital applications 98
Electron-hole transport asymmetry in Boron-doped Graphene Field Effect Transistors 98
Simulation of Graphene Nanoribbon Field-Effect Transistors 97
null 97
Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons 96
Velocity saturation in few-layer MoS2 transistor 96
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation 95
Modeling of Electron Devices Based on 2-D Materials 95
null 94
null 94
Threshold voltage dispersion and impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped reservoirs 93
Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors 92
"Atomistic", quantum and ballisticeffects in sub-100nm "well tempered" MOSFET 91
Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions 91
Negative Differential Resistance in mono and bilayer graphene p-n junctions 90
Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors 90
null 90
null 89
Transistor Concepts Based on Lateral Heterostructures of Metallic and Semiconducting Phases of MoS2 89
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate 88
Tecniques and method for the simulation of nanoscale ballistic MOSFET 87
Quantum transport modeling of defected graphene nanoribbons 86
Full band assessment of phonon-limited mobility in Graphene NanoRibbons 86
Limits and perspectives of graphene based devices for electronic applications 86
First-principles simulations of FETs based on two-dimensional InSe 86
Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors 85
Three-dimensional atomistic simulation of Carbon nanotube FETs with realistic geometry 85
Effective Bohm Quantum Potential for device simulators based on drift-diffusion and energy transport 85
null 85
Totale 11.196
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Categoria #
all - tutte 51.007
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 51.007
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.390 0 0 0 228 316 343 386 279 311 236 214 77
2020/20211.712 92 77 75 78 159 57 207 127 345 154 90 251
2021/20222.114 54 158 63 86 404 286 54 89 121 68 124 607
2022/20232.256 280 172 123 173 189 255 34 204 562 10 218 36
2023/20241.844 158 157 211 84 233 365 109 41 28 127 141 190
2024/2025585 57 261 170 97 0 0 0 0 0 0 0 0
Totale 18.505