CINECA IRIS Institutional Research Information System

VIRGILIO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 6.430
AS - Asia 2.923
EU - Europa 1.562
SA - Sud America 632
AF - Africa 263
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 5
Totale 11.821
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Nazione #
US - Stati Uniti d'America 6.297
SG - Singapore 954
IT - Italia 731
CN - Cina 704
HK - Hong Kong 615
BR - Brasile 523
VN - Vietnam 322
BG - Bulgaria 178
FR - Francia 115
SE - Svezia 109
TR - Turchia 105
MA - Marocco 102
CA - Canada 95
DE - Germania 90
RU - Federazione Russa 81
SN - Senegal 80
FI - Finlandia 72
GB - Regno Unito 59
AR - Argentina 44
IN - India 43
UA - Ucraina 38
JP - Giappone 34
CI - Costa d'Avorio 26
KR - Corea 21
BD - Bangladesh 20
BE - Belgio 18
EC - Ecuador 18
ZA - Sudafrica 18
ID - Indonesia 17
CH - Svizzera 16
MX - Messico 15
IQ - Iraq 12
AT - Austria 10
CL - Cile 10
NL - Olanda 10
PK - Pakistan 10
PY - Paraguay 10
UZ - Uzbekistan 9
DZ - Algeria 8
CO - Colombia 7
IE - Irlanda 7
PH - Filippine 7
SA - Arabia Saudita 7
TT - Trinidad e Tobago 7
VE - Venezuela 7
KZ - Kazakistan 6
OM - Oman 6
TN - Tunisia 6
AU - Australia 5
BJ - Benin 5
GR - Grecia 5
GT - Guatemala 5
KE - Kenya 5
MY - Malesia 5
UY - Uruguay 5
EG - Egitto 4
ES - Italia 4
EU - Europa 4
PE - Perù 4
PL - Polonia 4
AO - Angola 3
BB - Barbados 3
NP - Nepal 3
AE - Emirati Arabi Uniti 2
BN - Brunei Darussalam 2
BO - Bolivia 2
CR - Costa Rica 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
ET - Etiopia 2
GE - Georgia 2
IL - Israele 2
IR - Iran 2
JM - Giamaica 2
JO - Giordania 2
KG - Kirghizistan 2
KW - Kuwait 2
RO - Romania 2
XK - ???statistics.table.value.countryCode.XK??? 2
AM - Armenia 1
BF - Burkina Faso 1
CG - Congo 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
GY - Guiana 1
HR - Croazia 1
HU - Ungheria 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
MD - Moldavia 1
MK - Macedonia 1
MM - Myanmar 1
MN - Mongolia 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
PA - Panama 1
PR - Porto Rico 1
Totale 11.816
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Città #
Woodbridge 640
Ashburn 637
Hong Kong 607
Fairfield 564
Singapore 542
Santa Clara 489
Ann Arbor 459
Houston 447
San Jose 355
Dallas 341
Chandler 260
Seattle 224
Wilmington 208
Cambridge 204
Shanghai 199
Sofia 177
Beijing 153
New York 114
Milan 107
Casablanca 96
Boardman 94
Serra 92
Princeton 85
Dakar 80
Lawrence 80
Ho Chi Minh City 75
Ottawa 74
Lauterbourg 72
Medford 70
Izmir 66
Pisa 66
Los Angeles 55
Hanoi 53
Des Moines 50
Hefei 49
Nanjing 49
São Paulo 42
Buffalo 41
Dearborn 41
Redondo Beach 40
Council Bluffs 36
Jacksonville 36
The Dalles 35
Florence 34
Tokyo 34
San Diego 32
Columbus 29
Istanbul 27
Abidjan 26
Nanchang 24
Rome 23
Boulder 22
Dong Ket 22
Frankfurt am Main 21
Lucca 21
Helsinki 20
Scuola 20
Seoul 20
Marseille 17
Brussels 16
Massa 16
Haiphong 15
San Francisco 14
Belo Horizonte 13
Curitiba 13
Hebei 13
London 12
Norwalk 12
Catania 11
Kunming 11
Ogden 11
Porto Alegre 11
Bari 10
Bern 10
Campinas 10
Shenyang 10
Turin 10
Bologna 9
Brasília 9
Chicago 9
Rio de Janeiro 9
Tianjin 9
Amsterdam 8
Da Nang 8
Goiânia 8
Jiaxing 8
Tashkent 8
Cape Town 7
Chennai 7
East Aurora 7
Genoa 7
Guangzhou 7
Guayaquil 7
Vienna 7
Aachen 6
Auburn Hills 6
Baghdad 6
Changsha 6
Falkenstein 6
Indiana 6
Totale 8.984
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Nome #
Room Temperature Lattice Thermal Conductivity of GeSn Alloys 251
Dynamical systems and computable information 212
Radiative recombination and optical gain spectra in biaxially strained n-type germanium 200
Compression and diffusion: a joint approach to detect complexity 197
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 192
Tight-binding approach to electronic and optical properties of strained SiGe quantum wells 185
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers 184
Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices 172
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells 171
Conduction band intersubband transitions in Ge/SiGe quantum wells 171
Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling 168
Comparison of confinement characters between porous silicon and silicon nanowires 166
Long intersubband relaxation times in n-type germanium quantum wells 164
Confinement and interwell coupling effects in Ge double quantum wells pseudomorphic to a Si(001) substrate 160
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 156
Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach 155
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 155
Optical transitions between valley split subbands in biased Si quantum wells 154
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 150
Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates 149
Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach 147
Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates 145
Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures 145
Ge/SiGe Multiple Quantum Wells for Optical Applications 145
Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells 144
Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells 144
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning 143
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 142
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment 141
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 140
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 140
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 140
On device concepts for CMOS-compatible edge-emitters based on strained germanium 140
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 139
Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes 139
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 138
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 137
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 137
Type-I alignment and direct fundamental gap in SiGe based heterostructures 134
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology 134
Origins of visible-light emissions in porous silicon 132
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 130
Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells 129
Modeling of edge-emitting lasers based on tensile strained germanium microstrips 128
null 126
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 126
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description 124
Electron population dynamics in optically pumped asymmetric coupled Ge/SiGe quantum wells: Experiment and models 124
Terahertz Intersubband Transitions in the Conduction Band of Ge/SiGe Multi Quantum Wells 120
Gate-controlled quantum dots and superconductivity in planar germanium 120
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing 118
Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices 114
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 111
On-chip infrared photonics with Si-Ge-heterostructures: What is next? 111
Modeling picosecond electron dynamics of pumpe-probe intersubband spectroscopy in n-type Si/.SiGe quantum wells 110
n-type SiGe heterostructures for THz intersubband transitions 109
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 109
Photoluminescence of phosphorous doped Ge on Si (100) 108
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 105
Electron–hole superfluidity in strained Si/Ge type II heterojunctions 105
A High-Mobility Hole Bilayer in a Germanium Double Quantum Well 105
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device 104
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 101
The thermal stability of epitaxial GeSn layers 97
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis 97
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 97
Electron-phonon coupling in n -type Ge two-dimensional systems 97
Photoluminescence from GeSn nano-heterostructures 96
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 95
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line 92
Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo-Opto-Mechanical Properties 92
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells 91
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities 89
Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics 89
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 88
A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon 88
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/Si-Ge Quantum Cascade Structures 87
null 87
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells 87
Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence 86
Non-locality All the Way Through: Emergent Global Constraints in the Italian Morphological Lexicon 86
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 83
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks 80
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz 80
Mid-infrared second harmonic generation in p-type Ge/SiGe quantum wells: Toward waveguide integration 80
Quantum spin Hall phase in GeSn heterostructures on silicon 79
Strain-modulated Ge superlattices 79
Terahertz spectroscopy of germanium quantum wells on silicon substrate for terahertz photonics2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves 78
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 74
null 72
Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics 70
Probing the in-plane electron spin polarization in Ge/Si0.15 Ge0.85 multiple quantum wells 68
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 65
Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography 60
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 57
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 55
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 52
null 52
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 52
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 49
Totale 11.921
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Categoria #
all - tutte 34.364
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 34.364
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202198 0 0 0 0 0 0 0 0 0 0 0 98
2021/2022765 11 25 15 33 126 118 30 30 38 21 49 269
2022/2023733 99 69 15 56 84 106 3 50 196 12 37 6
2023/2024550 50 63 32 24 89 91 8 23 14 6 30 120
2024/20252.699 24 117 33 89 329 337 295 156 290 345 259 425
2025/20263.257 176 423 457 461 247 287 425 193 144 206 90 148
Totale 12.000