CINECA IRIS Institutional Research Information System

VIRGILIO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 4.263
EU - Europa 992
AS - Asia 540
AF - Africa 104
OC - Oceania 5
Continente sconosciuto - Info sul continente non disponibili 4
SA - Sud America 4
Totale 5.912
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Nazione #
US - Stati Uniti d'America 4.183
IT - Italia 448
CN - Cina 259
BG - Bulgaria 176
SE - Svezia 104
VN - Vietnam 82
CA - Canada 80
SG - Singapore 80
SN - Senegal 79
TR - Turchia 72
DE - Germania 51
FI - Finlandia 50
GB - Regno Unito 45
UA - Ucraina 30
CI - Costa d'Avorio 25
FR - Francia 23
IN - India 20
BE - Belgio 16
HK - Hong Kong 16
RU - Federazione Russa 15
CH - Svizzera 13
AU - Australia 5
IE - Irlanda 5
EU - Europa 4
NL - Olanda 4
PK - Pakistan 4
CL - Cile 2
CZ - Repubblica Ceca 2
GR - Grecia 2
AM - Armenia 1
AR - Argentina 1
AT - Austria 1
BO - Bolivia 1
DK - Danimarca 1
HU - Ungheria 1
IR - Iran 1
JP - Giappone 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MO - Macao, regione amministrativa speciale della Cina 1
NO - Norvegia 1
PL - Polonia 1
RO - Romania 1
SA - Arabia Saudita 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 5.912
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Città #
Woodbridge 640
Fairfield 564
Ann Arbor 459
Houston 445
Chandler 260
Ashburn 249
Seattle 222
Wilmington 207
Cambridge 204
Sofia 176
New York 108
Beijing 100
Serra 92
Princeton 85
Dakar 79
Lawrence 79
Ottawa 73
Milan 71
Medford 70
Izmir 66
Des Moines 49
Nanjing 49
Singapore 48
Dearborn 41
Jacksonville 36
San Diego 31
Abidjan 25
Nanchang 23
Pisa 23
Boulder 22
Dong Ket 22
Scuola 20
Brussels 16
Massa 16
Marseille 15
Hong Kong 14
Hebei 13
Hefei 13
Norwalk 12
Kunming 11
London 11
Ogden 11
Bern 10
Shenyang 9
Jiaxing 8
Tianjin 8
San Francisco 7
Auburn Hills 6
Changsha 6
Florence 6
Indiana 6
Modugno 6
Redwood City 6
Aachen 5
Bari 5
Guangzhou 5
Jüchen 5
Pune 5
Rome 5
Chennai 4
Dallas 4
Dublin 4
Frankfurt am Main 4
Livorno 4
Los Angeles 4
Peshawar 4
Prato 4
Redmond 4
Bengaluru 3
Bologna 3
Chengdu 3
Council Bluffs 3
Lucca 3
Palermo 3
Phoenix 3
Pistoia 3
Toronto 3
Washington 3
Zurich 3
Amsterdam 2
Boardman 2
Canberra 2
Cecina 2
Chiari 2
Collesalvetti 2
Delhi 2
Dormagen 2
Düsseldorf 2
Edinburgh 2
Falls Church 2
Frankfurt Am Main 2
Genoa 2
Grafing 2
Groningen 2
Hanover 2
Istanbul 2
Lido Di Camaiore 2
Montreal 2
Orange 2
Paris 2
Totale 4.989
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Nome #
Tight-binding approach to electronic and optical properties of strained SiGe quantum wells 147
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 137
Dynamical systems and computable information 135
null 126
Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices 119
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 117
Conduction band intersubband transitions in Ge/SiGe quantum wells 116
Confinement and interwell coupling effects in Ge double quantum wells pseudomorphic to a Si(001) substrate 114
Compression and diffusion: a joint approach to detect complexity 114
Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling 114
Radiative recombination and optical gain spectra in biaxially strained n-type germanium 114
Comparison of confinement characters between porous silicon and silicon nanowires 113
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers 112
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells 111
Long intersubband relaxation times in n-type germanium quantum wells 110
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning 108
Ge/SiGe Multiple Quantum Wells for Optical Applications 104
Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates 102
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 101
Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes 94
Optical transitions between valley split subbands in biased Si quantum wells 93
Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach 93
Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures 92
Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells 92
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 92
Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach 90
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 89
Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates 88
Origins of visible-light emissions in porous silicon 88
null 87
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 85
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment 85
Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells 83
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 81
Modeling of edge-emitting lasers based on tensile strained germanium microstrips 79
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 79
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 78
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 78
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 77
Terahertz Intersubband Transitions in the Conduction Band of Ge/SiGe Multi Quantum Wells 76
Photoluminescence of phosphorous doped Ge on Si (100) 76
On device concepts for CMOS-compatible edge-emitters based on strained germanium 76
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 73
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 72
null 72
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology 72
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 72
Type-I alignment and direct fundamental gap in SiGe based heterostructures 70
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing 70
Modeling picosecond electron dynamics of pumpe-probe intersubband spectroscopy in n-type Si/.SiGe quantum wells 66
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 66
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 64
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description 62
Photoluminescence from GeSn nano-heterostructures 62
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 56
n-type SiGe heterostructures for THz intersubband transitions 55
The thermal stability of epitaxial GeSn layers 55
Electron population dynamics in optically pumped asymmetric coupled Ge/SiGe quantum wells: Experiment and models 54
null 52
Room Temperature Lattice Thermal Conductivity of GeSn Alloys 51
Gate-controlled quantum dots and superconductivity in planar germanium 51
A High-Mobility Hole Bilayer in a Germanium Double Quantum Well 48
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 46
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line 45
Terahertz spectroscopy of germanium quantum wells on silicon substrate for terahertz photonics2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves 41
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 39
Electron-phonon coupling in n -type Ge two-dimensional systems 39
Non-locality All the Way Through: Emergent Global Constraints in the Italian Morphological Lexicon 38
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis 35
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells 33
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 32
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 32
Probing the in-plane electron spin polarization in Ge/Si0.15 Ge0.85 multiple quantum wells 27
Electron–hole superfluidity in strained Si/Ge type II heterojunctions 27
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells 26
Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo-Opto-Mechanical Properties 25
A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon 24
On-chip infrared photonics with Si-Ge-heterostructures: What is next? 19
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 15
Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics 15
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 15
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 14
Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics 11
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 10
Strain-modulated Ge superlattices 8
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 6
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/Si-Ge Quantum Cascade Structures 4
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 4
Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography 3
Quantum spin Hall phase in GeSn heterostructures on silicon 2
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks 2
Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells 2
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz 2
Mid-infrared second harmonic generation in p-type Ge/SiGe quantum wells: Toward waveguide integration 2
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device 2
Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices 1
Totale 6.054
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Categoria #
all - tutte 17.355
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.355
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.287 148 101 30 97 134 155 153 117 149 77 86 40
2020/2021668 37 42 32 18 143 23 20 49 93 58 55 98
2021/2022765 11 25 15 33 126 118 30 30 38 21 49 269
2022/2023733 99 69 15 56 84 106 3 50 196 12 37 6
2023/2024550 50 63 32 24 89 91 8 23 14 6 30 120
2024/202510 10 0 0 0 0 0 0 0 0 0 0 0
Totale 6.054