CINECA IRIS Institutional Research Information System

VIRGILIO, MICHELE
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 5.889
AS - Asia 2.556
EU - Europa 1.327
SA - Sud America 604
AF - Africa 244
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 5
Totale 10.630
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 5.778
SG - Singapore 815
CN - Cina 666
IT - Italia 605
HK - Hong Kong 597
BR - Brasile 506
VN - Vietnam 222
BG - Bulgaria 178
SE - Svezia 109
TR - Turchia 101
MA - Marocco 99
CA - Canada 85
RU - Federazione Russa 80
SN - Senegal 80
DE - Germania 79
FI - Finlandia 71
GB - Regno Unito 55
AR - Argentina 37
UA - Ucraina 36
IN - India 33
FR - Francia 32
CI - Costa d'Avorio 26
KR - Corea 21
BE - Belgio 18
EC - Ecuador 17
CH - Svizzera 16
BD - Bangladesh 15
ID - Indonesia 14
ZA - Sudafrica 13
MX - Messico 11
AT - Austria 10
JP - Giappone 10
PY - Paraguay 10
CL - Cile 9
IQ - Iraq 8
CO - Colombia 7
NL - Olanda 7
PK - Pakistan 7
UZ - Uzbekistan 7
SA - Arabia Saudita 6
VE - Venezuela 6
AU - Australia 5
BJ - Benin 5
DZ - Algeria 5
GR - Grecia 5
GT - Guatemala 5
IE - Irlanda 5
KE - Kenya 5
KZ - Kazakistan 5
ES - Italia 4
EU - Europa 4
OM - Oman 4
PE - Perù 4
PL - Polonia 4
TN - Tunisia 4
UY - Uruguay 4
EG - Egitto 3
PH - Filippine 3
AE - Emirati Arabi Uniti 2
AO - Angola 2
BB - Barbados 2
BN - Brunei Darussalam 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
DK - Danimarca 2
IR - Iran 2
KG - Kirghizistan 2
KW - Kuwait 2
MY - Malesia 2
NP - Nepal 2
RO - Romania 2
TT - Trinidad e Tobago 2
AM - Armenia 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
EE - Estonia 1
ET - Etiopia 1
GA - Gabon 1
GE - Georgia 1
GY - Guiana 1
HU - Ungheria 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
MK - Macedonia 1
MN - Mongolia 1
MO - Macao, regione amministrativa speciale della Cina 1
NI - Nicaragua 1
NO - Norvegia 1
PA - Panama 1
PR - Porto Rico 1
RS - Serbia 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SR - Suriname 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 10.630
Salva come PNG Salva come JPEG
Città #
Woodbridge 640
Hong Kong 593
Ashburn 585
Fairfield 564
Santa Clara 486
Ann Arbor 459
Houston 445
Singapore 435
Dallas 339
Chandler 260
Seattle 224
Wilmington 208
Cambridge 204
Shanghai 199
Sofia 177
Beijing 152
New York 113
Casablanca 95
Boardman 94
Serra 92
Milan 85
Princeton 85
Dakar 80
Lawrence 79
Ottawa 73
Medford 70
Izmir 66
Pisa 53
Los Angeles 51
Des Moines 49
Hefei 49
Nanjing 49
Ho Chi Minh City 47
Dearborn 41
Buffalo 40
Redondo Beach 40
São Paulo 40
Jacksonville 36
The Dalles 33
San Diego 31
Hanoi 28
Istanbul 27
Abidjan 26
Columbus 26
Council Bluffs 25
Nanchang 24
Boulder 22
Dong Ket 22
Scuola 20
Seoul 20
Helsinki 19
Lucca 18
Florence 17
San Jose 17
Brussels 16
Massa 16
Frankfurt am Main 15
Marseille 15
Rome 14
Belo Horizonte 13
Curitiba 13
Hebei 13
London 12
Norwalk 12
San Francisco 12
Haiphong 11
Kunming 11
Ogden 11
Porto Alegre 11
Bern 10
Campinas 10
Tokyo 10
Brasília 9
Rio de Janeiro 9
Shenyang 9
Tianjin 9
Bari 8
Catania 8
Chicago 8
Goiânia 8
Jiaxing 8
East Aurora 7
Genoa 7
Guangzhou 7
Guayaquil 7
Vienna 7
Aachen 6
Auburn Hills 6
Changsha 6
Chennai 6
Da Nang 6
Falkenstein 6
Indiana 6
Modugno 6
Pune 6
Redwood City 6
Ribeirão Preto 6
Salvador 6
Tashkent 6
Amsterdam 5
Totale 8.191
Salva come PNG Salva come JPEG
Nome #
Room Temperature Lattice Thermal Conductivity of GeSn Alloys 203
Dynamical systems and computable information 194
Radiative recombination and optical gain spectra in biaxially strained n-type germanium 189
Compression and diffusion: a joint approach to detect complexity 185
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 184
Tight-binding approach to electronic and optical properties of strained SiGe quantum wells 183
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers 169
Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices 161
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells 161
Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling 161
Conduction band intersubband transitions in Ge/SiGe quantum wells 160
Long intersubband relaxation times in n-type germanium quantum wells 159
Confinement and interwell coupling effects in Ge double quantum wells pseudomorphic to a Si(001) substrate 154
Comparison of confinement characters between porous silicon and silicon nanowires 153
Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach 149
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 149
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 143
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 143
Optical transitions between valley split subbands in biased Si quantum wells 142
Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates 141
Ge/SiGe Multiple Quantum Wells for Optical Applications 140
Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates 139
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 138
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 138
Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells 138
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 136
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning 136
On device concepts for CMOS-compatible edge-emitters based on strained germanium 135
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 134
Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach 134
Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells 134
Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures 133
Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes 132
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment 132
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 131
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 131
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 128
null 126
Modeling of edge-emitting lasers based on tensile strained germanium microstrips 124
Type-I alignment and direct fundamental gap in SiGe based heterostructures 123
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 120
Origins of visible-light emissions in porous silicon 119
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology 119
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 116
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing 115
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 111
Terahertz Intersubband Transitions in the Conduction Band of Ge/SiGe Multi Quantum Wells 108
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description 107
Gate-controlled quantum dots and superconductivity in planar germanium 106
Electron population dynamics in optically pumped asymmetric coupled Ge/SiGe quantum wells: Experiment and models 106
Photoluminescence of phosphorous doped Ge on Si (100) 105
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 104
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 104
Modeling picosecond electron dynamics of pumpe-probe intersubband spectroscopy in n-type Si/.SiGe quantum wells 101
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 99
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 96
n-type SiGe heterostructures for THz intersubband transitions 95
On-chip infrared photonics with Si-Ge-heterostructures: What is next? 95
Electron–hole superfluidity in strained Si/Ge type II heterojunctions 93
Electron-phonon coupling in n -type Ge two-dimensional systems 92
A High-Mobility Hole Bilayer in a Germanium Double Quantum Well 92
Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices 91
Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells 91
Photoluminescence from GeSn nano-heterostructures 90
The thermal stability of epitaxial GeSn layers 89
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis 89
null 87
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 85
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line 83
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 83
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells 83
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells 82
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device 81
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 81
Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo-Opto-Mechanical Properties 81
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 79
A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon 77
Non-locality All the Way Through: Emergent Global Constraints in the Italian Morphological Lexicon 72
null 72
Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics 72
Terahertz spectroscopy of germanium quantum wells on silicon substrate for terahertz photonics2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves 70
Strain-modulated Ge superlattices 69
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities 67
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/Si-Ge Quantum Cascade Structures 66
Mid-infrared second harmonic generation in p-type Ge/SiGe quantum wells: Toward waveguide integration 66
Probing the in-plane electron spin polarization in Ge/Si0.15 Ge0.85 multiple quantum wells 65
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz 63
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 63
Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence 62
Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics 60
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 53
null 52
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks 51
Quantum spin Hall phase in GeSn heterostructures on silicon 49
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 49
Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography 48
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 44
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 44
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 18
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 13
Totale 10.788
Salva come PNG Salva come JPEG
Categoria #
all - tutte 31.107
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.107
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021373 0 0 0 0 0 0 20 49 93 58 55 98
2021/2022765 11 25 15 33 126 118 30 30 38 21 49 269
2022/2023733 99 69 15 56 84 106 3 50 196 12 37 6
2023/2024550 50 63 32 24 89 91 8 23 14 6 30 120
2024/20252.699 24 117 33 89 329 337 295 156 290 345 259 425
2025/20262.056 176 423 457 461 247 287 5 0 0 0 0 0
Totale 10.799