CINECA IRIS Institutional Research Information System

VIRGILIO, MICHELE
 Distribuzione geografica
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Continente #
NA - Nord America 6.922
AS - Asia 2.943
EU - Europa 1.651
SA - Sud America 653
AF - Africa 265
Continente sconosciuto - Info sul continente non disponibili 185
OC - Oceania 5
Totale 12.624
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Nazione #
US - Stati Uniti d'America 6.747
SG - Singapore 957
IT - Italia 815
CN - Cina 708
HK - Hong Kong 616
BR - Brasile 534
VN - Vietnam 325
BG - Bulgaria 178
FR - Francia 115
SE - Svezia 111
CA - Canada 107
TR - Turchia 106
MA - Marocco 102
DE - Germania 90
RU - Federazione Russa 81
SN - Senegal 80
FI - Finlandia 72
GB - Regno Unito 60
AR - Argentina 46
IN - India 44
UA - Ucraina 38
JP - Giappone 35
CI - Costa d'Avorio 26
BD - Bangladesh 21
KR - Corea 21
ID - Indonesia 20
EC - Ecuador 19
ZA - Sudafrica 19
BE - Belgio 18
CH - Svizzera 16
MX - Messico 15
IQ - Iraq 12
CL - Cile 11
CO - Colombia 11
NL - Olanda 11
TT - Trinidad e Tobago 11
AT - Austria 10
PK - Pakistan 10
PY - Paraguay 10
UZ - Uzbekistan 9
DZ - Algeria 8
GT - Guatemala 8
IE - Irlanda 7
JM - Giamaica 7
PH - Filippine 7
SA - Arabia Saudita 7
VE - Venezuela 7
KE - Kenya 6
KZ - Kazakistan 6
MY - Malesia 6
OM - Oman 6
TN - Tunisia 6
AU - Australia 5
BJ - Benin 5
CR - Costa Rica 5
GR - Grecia 5
HN - Honduras 5
PE - Perù 5
UY - Uruguay 5
BB - Barbados 4
EG - Egitto 4
ES - Italia 4
EU - Europa 4
PL - Polonia 4
PR - Porto Rico 4
AO - Angola 3
DK - Danimarca 3
NP - Nepal 3
AE - Emirati Arabi Uniti 2
BN - Brunei Darussalam 2
BO - Bolivia 2
BZ - Belize 2
CZ - Repubblica Ceca 2
ET - Etiopia 2
GE - Georgia 2
GY - Guiana 2
IL - Israele 2
IR - Iran 2
JO - Giordania 2
KG - Kirghizistan 2
KW - Kuwait 2
LB - Libano 2
NI - Nicaragua 2
RO - Romania 2
SV - El Salvador 2
XK - ???statistics.table.value.countryCode.XK??? 2
AI - Anguilla 1
AM - Armenia 1
BF - Burkina Faso 1
CG - Congo 1
DO - Repubblica Dominicana 1
EE - Estonia 1
GA - Gabon 1
HR - Croazia 1
HU - Ungheria 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
MK - Macedonia 1
MM - Myanmar 1
MN - Mongolia 1
Totale 12.436
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Città #
Ashburn 691
Woodbridge 640
Hong Kong 608
Fairfield 564
Singapore 544
Santa Clara 497
Ann Arbor 459
Houston 449
San Jose 364
Dallas 344
Chandler 260
Seattle 225
Wilmington 208
Cambridge 205
Shanghai 199
Sofia 177
Beijing 155
Milan 123
New York 119
Council Bluffs 110
Casablanca 96
Boardman 94
Serra 92
Princeton 85
Dakar 80
Lawrence 80
Ho Chi Minh City 76
Ottawa 74
Lauterbourg 72
Medford 70
Los Angeles 68
Pisa 67
Izmir 66
Hanoi 53
Des Moines 50
Hefei 49
Nanjing 49
São Paulo 47
Buffalo 42
Dearborn 41
Redondo Beach 40
Florence 37
Jacksonville 37
Rome 35
The Dalles 35
Tokyo 35
San Diego 32
Columbus 30
Istanbul 28
Abidjan 26
Nanchang 24
Boulder 22
Dong Ket 22
Lucca 22
Frankfurt am Main 21
Helsinki 20
Scuola 20
Seoul 20
Marseille 17
Brussels 16
Massa 16
Haiphong 15
San Francisco 15
Turin 14
Bari 13
Belo Horizonte 13
Curitiba 13
Hebei 13
London 12
Norwalk 12
Catania 11
Chicago 11
Kunming 11
Ogden 11
Porto Alegre 11
Bern 10
Brasília 10
Campinas 10
Shenyang 10
Toronto 10
Bologna 9
Da Nang 9
Rio de Janeiro 9
Tianjin 9
Amsterdam 8
Chennai 8
Figino 8
Goiânia 8
Jiaxing 8
Livorno 8
Phoenix 8
Tashkent 8
Atlanta 7
Cape Town 7
East Aurora 7
Genoa 7
Guangzhou 7
Guayaquil 7
Vienna 7
Washington 7
Totale 9.228
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Nome #
Room Temperature Lattice Thermal Conductivity of GeSn Alloys 262
Dynamical systems and computable information 217
Compression and diffusion: a joint approach to detect complexity 207
Radiative recombination and optical gain spectra in biaxially strained n-type germanium 206
Optical transitions in Ge/SiGe multiple quantum wells with Ge-rich barriers 199
Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers 195
Tight-binding approach to electronic and optical properties of strained SiGe quantum wells 194
Tight-binding calculation of optical gain in tensile strained [001]-Ge/SiGe quantum wells 180
Conduction band intersubband transitions in Ge/SiGe quantum wells 179
Conduction intersubband transitions at normal incidence in Si1-xGex quantum well devices 177
Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling 172
Comparison of confinement characters between porous silicon and silicon nanowires 170
Long intersubband relaxation times in n-type germanium quantum wells 169
Optical spin orientation in strained Ge/SiGe quantum wells: A tight-binding approach 166
Confinement and interwell coupling effects in Ge double quantum wells pseudomorphic to a Si(001) substrate 164
Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy 164
Optical transitions between valley split subbands in biased Si quantum wells 160
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift 159
Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study 156
Optical gain in short period Si/Ge superlattices on [001]-SiGe substrates 154
Control of Electron-State Coupling in Asymmetric Ge/Si-Ge Quantum Wells 154
Valence and conduction intersubband transitions in SiGe, Ge-rich, quantum wells on [001] Si0.5Ge0.5 substrates: A tight-binding approach 153
Valley splitting and optical intersubband transitions at parallel and normal incidence in [001]-Ge/SiGe quantum wells 153
CMOS-fabricated tensile Ge microstructures: towards an edge-emitting laser2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 153
Valley splitting and selection rules for inter-doublets optical transitions in strained [001]-Si/SiGe heterostructures 151
Ge/SiGe Multiple Quantum Wells for Optical Applications 151
Polarization-dependent absorption in Ge/SiGe multiple quantum wells: Theory and experiment 150
Electron Dynamics in Silicon-Germanium Terahertz Quantum Fountain Structures 149
Theoretical investigation of near gap electronic states of Si/SiGe multiple quantum wells on (001)-Si or SiGe substrates 148
On device concepts for CMOS-compatible edge-emitters based on strained germanium 148
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning 148
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics 145
Robustness analysis of a device concept for edge-emitting lasers based on strained germanium 145
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions 145
Curvature effects on valley splitting and degeneracy lifting: The case of Si/Ge rolled-up nanotubes 144
Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells 143
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology 143
Quantum-confined direct-gap transitions in tensile-strained Ge/SiGe multiple quantum wells 142
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process 142
Origins of visible-light emissions in porous silicon 141
Type-I alignment and direct fundamental gap in SiGe based heterostructures 140
Ultrafast carrier recombination in highly n-doped Ge-on-Si films 140
Modeling of edge-emitting lasers based on tensile strained germanium microstrips 135
Photoluminescence of phosphorus atomic layer doped Ge grown on Si 134
Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells 133
Quantum-confined Stark effect in Ge/SiGe quantum wells: A tight-binding description 131
Electron population dynamics in optically pumped asymmetric coupled Ge/SiGe quantum wells: Experiment and models 131
null 126
Gate-controlled quantum dots and superconductivity in planar germanium 126
Terahertz Intersubband Transitions in the Conduction Band of Ge/SiGe Multi Quantum Wells 125
Lattice Deformation at Submicron Scale: X-Ray Nanobeam Measurements of Elastic Strain in Electron Shuttling Devices 123
Modeling of second harmonic generation in hole-doped silicon-germanium quantum wells for mid-infrared sensing 122
n-type SiGe heterostructures for THz intersubband transitions 119
Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multiple quantum wells 118
Modeling picosecond electron dynamics of pumpe-probe intersubband spectroscopy in n-type Si/.SiGe quantum wells 118
Combined effect of electron and lattice temperatures on the long intersubband relaxation times of Ge/SixGe1−x quantum wells 116
On-chip infrared photonics with Si-Ge-heterostructures: What is next? 114
Photoluminescence of phosphorous doped Ge on Si (100) 113
Nanoscale Mapping of the 3D Strain Tensor in a Germanium Quantum Well Hosting a Functional Spin Qubit Device 112
Physical mechanisms of intersubband-absorption linewidth broadening in s-Ge/SiGe quantum wells 111
Electron–hole superfluidity in strained Si/Ge type II heterojunctions 111
A High-Mobility Hole Bilayer in a Germanium Double Quantum Well 109
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides 105
Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering 105
Electron-phonon coupling in n -type Ge two-dimensional systems 102
The thermal stability of epitaxial GeSn layers 101
Photoluminescence from GeSn nano-heterostructures 101
Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis 100
The impact of donors on recombination mechanisms in heavily doped Ge/Si layers 98
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells 97
Tensile Strained Germanium Microstructures: A Comprehensive Analysis of Thermo-Opto-Mechanical Properties 97
Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence 95
Ultrastrong Coupling of Si1–xGex Parabolic Quantum Wells to Terahertz Microcavities 95
A NIR-LED based on tensile strained, heavily doped Ge/Si μ-strips fabricated in a BiCMOS pilot line 94
Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains 94
Mid-infrared second harmonic generation in p-type Ge/SiGe quantum wells: Toward waveguide integration 92
Second Harmonic Generation in Germanium Quantum Wells for Nonlinear Silicon Photonics 92
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells 91
A proof of concept of the bulk photovoltaic effect in non-uniformly strained silicon 91
Subnanometer Control of the Heteroepitaxial Growth of Multimicrometer-Thick Ge/Si-Ge Quantum Cascade Structures 90
High-quality CMOS compatible n-type SiGe parabolic quantum wells for intersubband photonics at 2.5–5 THz 89
Non-locality All the Way Through: Emergent Global Constraints in the Italian Morphological Lexicon 89
null 87
Terahertz absorption-saturation and emission from electron-doped germanium quantum wells 87
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks 85
Strain-modulated Ge superlattices 85
Quantum spin Hall phase in GeSn heterostructures on silicon 84
Terahertz spectroscopy of germanium quantum wells on silicon substrate for terahertz photonics2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves 83
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures 77
Probing the in-plane electron spin polarization in Ge/Si0.15 Ge0.85 multiple quantum wells 75
null 72
Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics 71
Challenges in modulation doping of n-type Ge/SiGe heterostructures: The role of epitaxial and thermal strain 71
Three-Dimensional Reconstruction of Interface Roughness and Alloy Disorder in Ge/GeSi Asymmetric Coupled Quantum Wells Using Electron Tomography 69
THz intersubband absorption in n-type Si1−xGex parabolic quantum wells 69
Near- and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells 64
Epitaxial SiGeSn Alloys for CMOS-Compatible Thermoelectric Devices 61
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling 59
Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates 54
On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures 53
Totale 12.529
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Categoria #
all - tutte 37.024
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 37.024
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022729 0 0 15 33 126 118 30 30 38 21 49 269
2022/2023733 99 69 15 56 84 106 3 50 196 12 37 6
2023/2024550 50 63 32 24 89 91 8 23 14 6 30 120
2024/20252.699 24 117 33 89 329 337 295 156 290 345 259 425
2025/20263.360 176 423 457 461 247 287 425 193 144 206 90 251
2026/2027521 75 205 241 0 0 0 0 0 0 0 0 0
Totale 12.624